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SiHFI630G-VB Product details
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SiHFI630G-VB Product Introduction
SiHFI630G-VB is an N-channel power MOSFET using Trench technology, packaged in TO220F, designed for applications with medium voltage and current requirements. Its maximum drain-source voltage (V_DS) is 200V, and the maximum gate-source voltage (V_GS) is ±20V. It is suitable for medium-power applications such as power management, battery management, and load switching that require efficient current switching and control. The on-resistance (R_DS(ON)) of this MOSFET is 265mΩ, which provides lower conduction losses when V_GS = 10V, making it suitable for efficient current switching applications. The maximum drain current (I_D) is 10A, ensuring stable operation under higher loads.
SiHFI630G-VB uses Trench technology to effectively reduce on-resistance and increase switching speed and switching frequency, making it particularly suitable for high-frequency power conversion, power regulation, load control and other occasions that require fast switching and low power consumption. Its threshold voltage (V_th) is 3V, which is suitable for lower voltage drive, has good switching control characteristics, and can play an excellent performance in various small and medium power applications.
SiHFI630G-VB is an N-channel power MOSFET using Trench technology, packaged in TO220F, designed for applications with medium voltage and current requirements. Its maximum drain-source voltage (V_DS) is 200V, and the maximum gate-source voltage (V_GS) is ±20V. It is suitable for medium-power applications such as power management, battery management, and load switching that require efficient current switching and control. The on-resistance (R_DS(ON)) of this MOSFET is 265mΩ, which provides lower conduction losses when V_GS = 10V, making it suitable for efficient current switching applications. The maximum drain current (I_D) is 10A, ensuring stable operation under higher loads.
SiHFI630G-VB uses Trench technology to effectively reduce on-resistance and increase switching speed and switching frequency, making it particularly suitable for high-frequency power conversion, power regulation, load control and other occasions that require fast switching and low power consumption. Its threshold voltage (V_th) is 3V, which is suitable for lower voltage drive, has good switching control characteristics, and can play an excellent performance in various small and medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SiHFI630G-VB detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 200V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 265mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: 10A
- **Technology**: Trench (Trench technology)
- **Input capacitance (C_iss)**: About 220pF (typical value)
- **Reverse recovery time (T_rr)**: About 40ns (typical value)
- **Maximum power consumption (P_D)**: Approximately 50W (depending on heat dissipation conditions)
SiHFI630G-VB provides low on-resistance, optimizes power loss, and ensures high efficiency performance during high current operation. Its high V_DS and moderate I_D make it an ideal choice for multiple applications, especially where stable current control and efficient power conversion are required.
- **Package type**: TO220F
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 200V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 265mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: 10A
- **Technology**: Trench (Trench technology)
- **Input capacitance (C_iss)**: About 220pF (typical value)
- **Reverse recovery time (T_rr)**: About 40ns (typical value)
- **Maximum power consumption (P_D)**: Approximately 50W (depending on heat dissipation conditions)
SiHFI630G-VB provides low on-resistance, optimizes power loss, and ensures high efficiency performance during high current operation. Its high V_DS and moderate I_D make it an ideal choice for multiple applications, especially where stable current control and efficient power conversion are required.
Domain and module applications：
Application fields and module examples: 1. Switching Power Supplies: SiHFI630G-VB can be used as the main switching element in switching power supplies for voltage conversion and regulation. Its low on-resistance and high-efficiency switching performance are suitable for medium-power DC-DC converters, buck converters, and forward power supply systems, which can effectively reduce switching losses and improve the overall efficiency of the system. 2. Battery Management Systems: In battery management systems, SiHFI630G-VB can be used as a switching element for charge and discharge management, especially for battery management in power tools, electric vehicles, and portable devices. Due to its high switching frequency and low power consumption, it can ensure efficient charging and discharging of batteries and optimize battery life and operational safety. 3. Power Management in Electric Tools: SiHFI630G-VB can be used in power management systems in power tools, especially in driving motors and controlling battery charging. The low on-resistance of this MOSFET can reduce power loss, improve tool efficiency, and help the battery complete the charge and discharge cycle more efficiently.
4. **LED Drivers**:
In LED driver circuits, SiHFI630G-VB can be used as a switching element to control the flow of LED current. With its low on-resistance and efficient switching characteristics, it can optimize the power conversion of LED drivers, provide stable output current, and ensure efficient operation of LED lighting systems.
5. **Electric Vehicles**:
In electric vehicle systems, SiHFI630G-VB can be used as a power switch to control the current flow of electric drive systems. Its high efficiency and high switching frequency make it an ideal choice for efficient power conversion and load control in electric vehicles, especially in drive motors and battery management systems.
6. **Inverters**:
SiHFI630G-VB can be used in low-power inverters to help convert DC to AC. It can work efficiently and achieve stable power output in small solar power generation systems and home photovoltaic power generation systems. The efficient switching performance of MOSFET makes it particularly suitable for high-frequency inverter applications.
7. **Audio Amplifiers**:
In audio amplifiers, SiHFI630G-VB can be used for power supply voltage regulation and load switch control. It can ensure the stability and low power loss of audio amplifiers during current transmission, especially suitable for audio equipment such as home audio and car audio.
8. **Low-Power Power Conversion Modules**:
SiHFI630G-VB is suitable for low-power power conversion modules, such as small DC-AC converters or battery chargers. Its excellent switching performance ensures efficient power conversion and performs well in applications that require small size, low power consumption and high reliability.
Through these applications, SiHFI630G-VB provides efficient power management, power regulation and load control solutions, which are widely used in battery management, LED drive, power tools, inverters and other fields, helping to improve system efficiency, stability and energy efficiency and reduce power loss.
4. **LED Drivers**:
In LED driver circuits, SiHFI630G-VB can be used as a switching element to control the flow of LED current. With its low on-resistance and efficient switching characteristics, it can optimize the power conversion of LED drivers, provide stable output current, and ensure efficient operation of LED lighting systems.
5. **Electric Vehicles**:
In electric vehicle systems, SiHFI630G-VB can be used as a power switch to control the current flow of electric drive systems. Its high efficiency and high switching frequency make it an ideal choice for efficient power conversion and load control in electric vehicles, especially in drive motors and battery management systems.
6. **Inverters**:
SiHFI630G-VB can be used in low-power inverters to help convert DC to AC. It can work efficiently and achieve stable power output in small solar power generation systems and home photovoltaic power generation systems. The efficient switching performance of MOSFET makes it particularly suitable for high-frequency inverter applications.
7. **Audio Amplifiers**:
In audio amplifiers, SiHFI630G-VB can be used for power supply voltage regulation and load switch control. It can ensure the stability and low power loss of audio amplifiers during current transmission, especially suitable for audio equipment such as home audio and car audio.
8. **Low-Power Power Conversion Modules**:
SiHFI630G-VB is suitable for low-power power conversion modules, such as small DC-AC converters or battery chargers. Its excellent switching performance ensures efficient power conversion and performs well in applications that require small size, low power consumption and high reliability.
Through these applications, SiHFI630G-VB provides efficient power management, power regulation and load control solutions, which are widely used in battery management, LED drive, power tools, inverters and other fields, helping to improve system efficiency, stability and energy efficiency and reduce power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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