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SiHFI620G-VB Product details

Product introduction:

1. Product Introduction

**SiHFI620G-VB** is a **single N-channel MOSFET** in **TO220F package**, suitable for **low voltage switch control, load switch and power management applications**. The device has **200V drain-source voltage (V_DS)** and **10A maximum drain current (I_D)**, suitable for medium and low voltage power supply systems. Its **on-resistance (R_DS(on))** is **265mΩ** at **V_GS = 10V**, which can effectively reduce power loss, and use **Trench technology** to provide higher efficiency and lower switching loss. SiHFI620G-VB is widely used in **switching power supplies, DC-DC converters** and **low voltage drive circuits**, and performs well in achieving efficient energy conversion and control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 200V 3V 10A 265mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description

- **Model**: SiHFI620G-VB
- **Package**: TO220F
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 200V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(on))**:
- **@ V_GS = 10V**: 265mΩ
- **Maximum leakage current (I_D)**: 10A
- **Power dissipation (P_D)**: 75W
- **Maximum junction temperature**: +150°C
- **Thermal resistance (R_thJC)**: 2.5°C/W (junction to case)
- **Technology**: Trench
- **Static characteristics**:
- **V_GS(th)**: 3V (to ensure that the device can stably conduct under standard operating voltage)

Domain and module applications:

3. Application fields and module examples

**1. Switching power supply (SMPS) **
- **Application scenarios**: SiHFI620G-VB can be widely used in **switching power supply (SMPS)** systems as a power switching element to support efficient voltage conversion and energy transmission. Its high withstand voltage and low on-resistance characteristics make it excellent in efficient power management.
- **Example**: In **AC-DC converters** and **DC-DC converters**, MOSFETs are used as high-frequency switches to ensure that the system efficiently converts the input voltage to the required stable output.

**2. Battery management and chargers**
- **Application scenarios**: SiHFI620G-VB is very suitable for **battery management systems (BMS)**, such as **lithium battery chargers**, to control the charging and discharging process of the battery. Its low on-resistance and good current carrying capacity ensure efficient and safe battery management.
- **Example**: In **power tool battery charger**, MOSFET can be used to control the charging current of the battery, thereby achieving precise battery charging management and extending battery life.

**3. Electric vehicles and battery drives**
- **Application scenarios**: SiHFI620G-VB can also be used in **electric vehicles (EV)** or **electric bicycles (e-bikes)** as a switching element for battery management and motor drive control.
- **Example**: In **electric bicycles** or **electric vehicle drive systems**, MOSFET can be used to control the current flow between the battery and the motor, helping to achieve efficient driving and energy recovery.

**4. Load switching and load control**
- **Application scenarios**: SiHFI620G-VB can be used in various **load switching** systems, especially those that require load control at higher voltages. For example, in **lighting systems, industrial control systems**, etc., MOSFET can be used as a switching element to adjust the start and stop of the load.
- **Example**: In **industrial automation systems**, MOSFETs can be used for load control to ensure that the system can reliably turn devices on or off as needed.

**5. High-frequency switching applications**
- **Application scenarios**: Due to its **Trench technology** and **low on-resistance**, SiHFI620G-VB is particularly suitable for **high-frequency switching applications**, such as **RF power amplifiers, switching power supply modules**, etc.
- **Example**: In **RF (RF) power amplifiers** or **communication equipment**, MOSFETs can be used as high-frequency switches to provide low-loss and high-efficiency signal conditioning.

**6. Power electronic equipment**
- **Application scenarios**: SiHFI620G-VB is suitable for **power electronic equipment**, such as **inverters, frequency converters**, etc., as a power switching element, which helps improve the power conversion efficiency and stability of the equipment.
- **Example**: In **solar inverter** or **power conditioning system**, MOSFET is used to control the switching and conversion of power to ensure efficient operation of the power system.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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