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SIHFI520G-VB Product details
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SIHFI520G-VB Product Introduction
**SIHFI520G-VB** is a **single N-channel MOSFET**, using **TO220F package**, designed to support **high-efficiency power conversion**, its **VDS** (drain-source voltage) is **100V**, and can withstand higher voltage loads. This MOSFET uses **Trench technology**, which gives it a lower on-resistance (**RDS(ON) = 86mΩ@VGS=10V**), thereby achieving lower power loss and higher current carrying capacity. Its **drain current (ID)** is **18A**, which performs well in high-frequency and fast switching applications.
**SIHFI520G-VB**'s **1.8V** **threshold voltage (Vth)** allows it to turn on at a lower gate-source voltage, making it suitable for low-voltage drive circuits, with good switching characteristics, and suitable for applications requiring higher efficiency and stability.
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**SIHFI520G-VB** is a **single N-channel MOSFET**, using **TO220F package**, designed to support **high-efficiency power conversion**, its **VDS** (drain-source voltage) is **100V**, and can withstand higher voltage loads. This MOSFET uses **Trench technology**, which gives it a lower on-resistance (**RDS(ON) = 86mΩ@VGS=10V**), thereby achieving lower power loss and higher current carrying capacity. Its **drain current (ID)** is **18A**, which performs well in high-frequency and fast switching applications.
**SIHFI520G-VB**'s **1.8V** **threshold voltage (Vth)** allows it to turn on at a lower gate-source voltage, making it suitable for low-voltage drive circuits, with good switching characteristics, and suitable for applications requiring higher efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SIHFI520G-VB Detailed parameter description
- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 100V – Can withstand drain-source voltages up to 100V, suitable for medium voltage range applications.
- **VGS (gate-source voltage): ** ±20V – Maximum gate-source voltage is ±20V, suitable for a variety of gate drive voltage configurations.
- **Vth (threshold voltage): ** 1.8V – Lower threshold voltage helps fast turn-on at lower gate-source voltages.
- **RDS(ON) (on-resistance): ** 86mΩ@VGS=10V – Provides lower on-resistance at a gate-source voltage of 10V, reducing power loss.
- **ID (drain current): ** 18A – Has a high current carrying capacity, suitable for high power applications.
- **Technology:** Trench – Using Trench technology, the conduction characteristics of MOSFET are optimized, providing low on-resistance and improving efficiency.
- **Operating temperature range:** -55°C to +150°C – It can operate stably in a wide temperature range and is suitable for high temperature environments such as industrial and automotive.
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- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 100V – Can withstand drain-source voltages up to 100V, suitable for medium voltage range applications.
- **VGS (gate-source voltage): ** ±20V – Maximum gate-source voltage is ±20V, suitable for a variety of gate drive voltage configurations.
- **Vth (threshold voltage): ** 1.8V – Lower threshold voltage helps fast turn-on at lower gate-source voltages.
- **RDS(ON) (on-resistance): ** 86mΩ@VGS=10V – Provides lower on-resistance at a gate-source voltage of 10V, reducing power loss.
- **ID (drain current): ** 18A – Has a high current carrying capacity, suitable for high power applications.
- **Technology:** Trench – Using Trench technology, the conduction characteristics of MOSFET are optimized, providing low on-resistance and improving efficiency.
- **Operating temperature range:** -55°C to +150°C – It can operate stably in a wide temperature range and is suitable for high temperature environments such as industrial and automotive.
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Domain and module applications：
Applications and module examples
The **100V** drain-source voltage and **18A** drain current of the **SIHFI520G-VB** make it an ideal choice for a variety of medium voltage, high power applications. Here are some typical application areas of this MOSFET:
1. **DC-DC converters:**
- In **DC-DC converters**, the SIHFI520G-VB can be used as a switching element to provide efficient power conversion. Its **low RDS(ON)** value and **high current carrying capacity** enable it to effectively reduce heat generation and improve efficiency during the power conversion process, and is suitable for notebook power supplies, battery management and charging circuits.
2. **Power management system:**
- This MOSFET is suitable for **power management systems**, especially those systems that require high efficiency and high current carrying capacity, such as **uninterruptible power supplies (UPS)**, server power supplies, and **battery charge and discharge management**. Its **low on-resistance** and **high current capability** enable it to maintain high efficiency and reduce power loss in such applications.
3. **LED Driver Power Supply:**
- In **LED Driver Power Supply**, SIHFI520G-VB can be used as a switching element for current regulation, providing stable current output to effectively drive LED lighting systems. Especially in high-power LED applications such as high-power lighting systems, street lighting and commercial building lighting.
4. **Power Tool Drive System:**
- SIHFI520G-VB is suitable for **power tool drive systems**, such as electric drills, grinders, fans and other equipment. Its higher drain current and **low on-resistance** enable it to provide higher efficiency in motor control and drive circuits.
5. **Automotive Electronic System:**
- Due to its ability to withstand higher voltages and currents, SIHFI520G-VB is suitable for **automotive electronic systems**, such as power seat controls, power window controls and battery management systems. This MOSFET can efficiently handle power management and other high-power applications.
6. **Power amplifier power supply:**
- In the **power amplifier** power supply, SIHFI520G-VB can be used as a switching element to provide a stable power supply for the power amplifier to ensure the normal operation of audio equipment, wireless communication equipment and other high-power devices.
7. **Battery management and protection circuit:**
- This MOSFET is suitable for **Battery Management System (BMS)**, which is used to monitor and control the battery charging and discharging process to ensure that the battery operates within a safe current range. It can also be used as part of a battery protection circuit to prevent overcharging or over-discharging.
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The **100V** drain-source voltage and **18A** drain current of the **SIHFI520G-VB** make it an ideal choice for a variety of medium voltage, high power applications. Here are some typical application areas of this MOSFET:
1. **DC-DC converters:**
- In **DC-DC converters**, the SIHFI520G-VB can be used as a switching element to provide efficient power conversion. Its **low RDS(ON)** value and **high current carrying capacity** enable it to effectively reduce heat generation and improve efficiency during the power conversion process, and is suitable for notebook power supplies, battery management and charging circuits.
2. **Power management system:**
- This MOSFET is suitable for **power management systems**, especially those systems that require high efficiency and high current carrying capacity, such as **uninterruptible power supplies (UPS)**, server power supplies, and **battery charge and discharge management**. Its **low on-resistance** and **high current capability** enable it to maintain high efficiency and reduce power loss in such applications.
3. **LED Driver Power Supply:**
- In **LED Driver Power Supply**, SIHFI520G-VB can be used as a switching element for current regulation, providing stable current output to effectively drive LED lighting systems. Especially in high-power LED applications such as high-power lighting systems, street lighting and commercial building lighting.
4. **Power Tool Drive System:**
- SIHFI520G-VB is suitable for **power tool drive systems**, such as electric drills, grinders, fans and other equipment. Its higher drain current and **low on-resistance** enable it to provide higher efficiency in motor control and drive circuits.
5. **Automotive Electronic System:**
- Due to its ability to withstand higher voltages and currents, SIHFI520G-VB is suitable for **automotive electronic systems**, such as power seat controls, power window controls and battery management systems. This MOSFET can efficiently handle power management and other high-power applications.
6. **Power amplifier power supply:**
- In the **power amplifier** power supply, SIHFI520G-VB can be used as a switching element to provide a stable power supply for the power amplifier to ensure the normal operation of audio equipment, wireless communication equipment and other high-power devices.
7. **Battery management and protection circuit:**
- This MOSFET is suitable for **Battery Management System (BMS)**, which is used to monitor and control the battery charging and discharging process to ensure that the battery operates within a safe current range. It can also be used as part of a battery protection circuit to prevent overcharging or over-discharging.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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