中文
English
SIHFI510G-VB Product details
Back to previous pageProduct introduction：
SIHFI510G-VB Product Introduction
**SIHFI510G-VB** is an **N-channel MOSFET** in a **TO220F** package, designed for high-efficiency switching and power regulation applications. It uses **Trench technology**, has lower **RDS(ON)** and higher voltage withstand capability, and is suitable for various **medium power control and switching circuits**. This MOSFET has a maximum **drain-source voltage** (VDS) of **100V** and a maximum **drain current** (ID) of **18A**, and has superior performance in efficient current transmission. Its **Vth** is **1.8V**, allowing it to work smoothly under low **VGS** drive. **SIHFI510G-VB** is suitable for power control applications that require high efficiency and low loss.
**SIHFI510G-VB** is an **N-channel MOSFET** in a **TO220F** package, designed for high-efficiency switching and power regulation applications. It uses **Trench technology**, has lower **RDS(ON)** and higher voltage withstand capability, and is suitable for various **medium power control and switching circuits**. This MOSFET has a maximum **drain-source voltage** (VDS) of **100V** and a maximum **drain current** (ID) of **18A**, and has superior performance in efficient current transmission. Its **Vth** is **1.8V**, allowing it to work smoothly under low **VGS** drive. **SIHFI510G-VB** is suitable for power control applications that require high efficiency and low loss.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SIHFI510G-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- **86mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Maximum power dissipation**: 96W
- **Operating temperature range**: -55°C to +150°C
- **RθJC (junction-to-case thermal resistance)**: 2.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 62.5°C/W
- **Technology**: Trench
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Suitable for fast switching applications
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- **86mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Maximum power dissipation**: 96W
- **Operating temperature range**: -55°C to +150°C
- **RθJC (junction-to-case thermal resistance)**: 2.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 62.5°C/W
- **Technology**: Trench
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Suitable for fast switching applications
Domain and module applications：
Application fields and module examples
1. **Switching power supply and DC-DC converter**
**SIHFI510G-VB** is suitable for **switching power supply modules**, such as **DC-DC converter** and **Buck/Boost converter**. Due to its low **RDS(ON)** and high current carrying capacity, it can provide the lowest power loss in efficient power conversion and improve the overall efficiency of the system. It is very suitable for medium-power applications that require precise voltage regulation.
2. **Motor drive and control**
In **motor drive circuits**, **SIHFI510G-VB** can be used as an efficient switching element that can switch quickly and carry large currents. This MOSFET is suitable for **stepper motor drive**, **DC motor control** and other motor drive applications. It can ensure smooth current flow and optimize power utilization.
3. **Battery Management System (BMS)**
In **battery management systems**, **SIHFI510G-VB** is used for **battery charge and discharge control**. This MOSFET can be used to switch battery current, control the charging and discharging process, and ensure that the battery is in an efficient and safe working state. Especially in the **Li-ion battery management** system, it can provide low **RDS(ON)** switching characteristics to reduce power consumption and heat.
4. **Power amplifier and audio amplifier**
**SIHFI510G-VB** can be used in **audio amplifier** and **power amplifier**, especially in **high-efficiency audio amplifier circuit**. Due to its higher **ID** and lower **RDS(ON)**, it can provide lower loss and keep the system stable, suitable for high-power audio amplification and signal conditioning.
5. **LED drive circuit**
**SIHFI510G-VB** can also work efficiently in **LED drivers**. Because it can withstand large currents and has a low on-resistance, it can ensure stable brightness of LEDs in **constant current drive circuits** while reducing power consumption and heat.
6. **Load switching and protection circuit**
**SIHFI510G-VB** is also suitable for **load switching circuit**, such as **overcurrent protection** or **overheat protection**. It can be used to switch load current, ensure the normal operation of the circuit, and protect electronic equipment from damage caused by overcurrent or short circuit.
1. **Switching power supply and DC-DC converter**
**SIHFI510G-VB** is suitable for **switching power supply modules**, such as **DC-DC converter** and **Buck/Boost converter**. Due to its low **RDS(ON)** and high current carrying capacity, it can provide the lowest power loss in efficient power conversion and improve the overall efficiency of the system. It is very suitable for medium-power applications that require precise voltage regulation.
2. **Motor drive and control**
In **motor drive circuits**, **SIHFI510G-VB** can be used as an efficient switching element that can switch quickly and carry large currents. This MOSFET is suitable for **stepper motor drive**, **DC motor control** and other motor drive applications. It can ensure smooth current flow and optimize power utilization.
3. **Battery Management System (BMS)**
In **battery management systems**, **SIHFI510G-VB** is used for **battery charge and discharge control**. This MOSFET can be used to switch battery current, control the charging and discharging process, and ensure that the battery is in an efficient and safe working state. Especially in the **Li-ion battery management** system, it can provide low **RDS(ON)** switching characteristics to reduce power consumption and heat.
4. **Power amplifier and audio amplifier**
**SIHFI510G-VB** can be used in **audio amplifier** and **power amplifier**, especially in **high-efficiency audio amplifier circuit**. Due to its higher **ID** and lower **RDS(ON)**, it can provide lower loss and keep the system stable, suitable for high-power audio amplification and signal conditioning.
5. **LED drive circuit**
**SIHFI510G-VB** can also work efficiently in **LED drivers**. Because it can withstand large currents and has a low on-resistance, it can ensure stable brightness of LEDs in **constant current drive circuits** while reducing power consumption and heat.
6. **Load switching and protection circuit**
**SIHFI510G-VB** is also suitable for **load switching circuit**, such as **overcurrent protection** or **overheat protection**. It can be used to switch load current, ensure the normal operation of the circuit, and protect electronic equipment from damage caused by overcurrent or short circuit.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
