Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DIP8 |
Single-N |
60V |
|
1~3V |
2.5A |
|
|
100mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DIP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DIP8 |
Single-N |
60V |
|
1~3V |
2.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DIP8 |
Single-N |
60V |
|
1~3V |
2.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DIP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type(Package)**: DIP8
- **Configuration(Configuration)**: Unipolar N-Channel MOSFET
- **Drain-source voltage(VDS)**: 60V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1V ~ 3V
- **On-resistance(RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Maximum drain current(ID)**: 2.5A
- **Maximum power dissipation(Pd)**: 2W
- **Operating temperature range(Tj)**: -55°C to 150°C
- **Gate charge(Qg)**: 13nC @ VDS = 30V, VGS = 10V
- **Reverse recovery time (trr)**: 50ns
- **Technology**: Trench
Domain and module applications:
Application fields and module examples
1. **Low-Power Power Switches**
**SiHFD024-E3-VB** is suitable for **low-power power switches** in applications with **60V** voltage. It can effectively switch current in **DC power supplies**, **battery chargers** or **low-voltage power management circuits**, and is particularly suitable for low-power devices that require switch control to help efficiently control the flow and disconnection of current.
2. **LED Driver Circuits**
The low on-resistance (**100mΩ**) and medium current capability (**2.5A**) of this MOSFET make it suitable for **LED driver circuits**. LED driver systems usually require devices with low power loss and the ability to withstand repeated switching operations. SiHFD024-E3-VB is suitable for such applications, especially in **low current** and **low voltage** LED systems, which can work stably and extend the life of LEDs.
3. **Battery Management Systems**
In **battery management systems** (such as **lithium battery protection circuits**), SiHFD024-E3-VB is very suitable for use in battery charge and discharge control, overcurrent protection, and battery voltage monitoring due to its **60V** drain-source voltage and low **on-resistance**. It can effectively switch current and provide short-circuit protection to ensure that the battery operates within a safe voltage and current range.
4. **Power Regulation and Voltage Regulation Modules**
**SiHFD024-E3-VB**'s low power loss characteristics make it particularly important in power regulation applications such as **DC-DC converters** or **linear regulators**. It can play an important role in **voltage conversion** and **current regulation** applications, providing precise voltage control and ensuring efficient and stable operation of the system.
5. **Communication Equipment Power Supplies**
This MOSFET is suitable for **communication equipment power supplies**, such as **routers, telecom switching equipment** and other small communication devices that require a stable power supply. It can operate stably under low current requirements, ensuring that the equipment will not overheat or be damaged when operating efficiently, especially in **battery-powered devices**, which can extend the service life of the equipment.
6. **Home Appliance Control Circuits**
Due to its good switching characteristics and medium current carrying capacity, **SiHFD024-E3-VB** can be widely used in **home appliance control circuits**. Whether it is **power tools**, **home appliance power management systems** or **microwave ovens, refrigerators** and other electrical appliances, the switching circuits can achieve efficient current control through this MOSFET, providing stable and reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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