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SiHFBF30S-VB Product details
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Product Introduction: SiHFBF30S-VB MOSFET
**SiHFBF30S-VB** is a high-voltage, low on-resistance single N-channel MOSFET packaged in TO263 and using **SJ_Multi-EPI technology**. The device has a maximum drain-source voltage (VDS) of 900V and is suitable for high-voltage switching applications, especially in power electronics systems that require high currents and higher voltages. Its maximum gate-source voltage (VGS) is ±30V, which is suitable for controlling high-power devices. The on-resistance (RDS(ON)) of the MOSFET is 950mΩ@VGS=10V, which can effectively reduce switching losses and improve system efficiency. Its maximum leakage current (ID) is 7A, which is very suitable for use in high-power converters, switching power supplies, inverters and other equipment.
**SiHFBF30S-VB** is a high-voltage, low on-resistance single N-channel MOSFET packaged in TO263 and using **SJ_Multi-EPI technology**. The device has a maximum drain-source voltage (VDS) of 900V and is suitable for high-voltage switching applications, especially in power electronics systems that require high currents and higher voltages. Its maximum gate-source voltage (VGS) is ±30V, which is suitable for controlling high-power devices. The on-resistance (RDS(ON)) of the MOSFET is 950mΩ@VGS=10V, which can effectively reduce switching losses and improve system efficiency. Its maximum leakage current (ID) is 7A, which is very suitable for use in high-power converters, switching power supplies, inverters and other equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 900V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 950mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applicable fields and modules:
1. **High-voltage power management and switching power supply**:
Since **SiHFBF30S-VB** MOSFET has a maximum drain-source voltage of 900V, it is particularly suitable for high-voltage switching power supplies and AC-DC power modules. Its low on-resistance can effectively reduce power loss and improve the conversion efficiency of power supply. It is widely used in power supply, industrial power supply, UPS system and solar inverter.
2. **Inverter and frequency converter**:
In inverters and frequency converters, **SiHFBF30S-VB** can be used to convert DC power to AC power, which is particularly suitable for applications requiring high voltage control. Its high voltage capability gives it better resistance to shock during power conversion, and is suitable for use in inverter circuits in renewable energy systems such as wind power generation and photovoltaic power generation.
3. **Battery Management System (BMS)**:
In electric vehicles, power tools and other energy storage devices, **SiHFBF30S-VB** can help achieve efficient battery management. The high voltage tolerance of MOSFET makes it stable and reliable in battery charge and discharge control, and can handle high current systems to optimize battery life and safety.
4. **Industrial Automation and Motor Drive**:
In industrial automation, **SiHFBF30S-VB** is widely used to drive motor control systems. Its high voltage capability and low on-resistance make it very suitable for application in various industrial motor drives, servo motor control systems and industrial robots.
5. **Electric Vehicles and Electrified Transportation**:
In electric vehicles and electrified transportation systems, **SiHFBF30S-VB** can be used for battery charge and discharge management and high-voltage power supply control. Due to its ability to withstand high voltages of 900V, MOSFETs are widely used in battery management systems (BMS), charging piles and inverter systems in electric vehicles, ensuring safe and efficient operation of vehicles under high power demands.
6. Audio power amplifiers and high-frequency power applications:
The SiHFBF30S-VB is also suitable for audio power amplifiers and other high-frequency power applications. Its high voltage tolerance and low switching losses make it suitable for use in equipment that requires high-frequency, high-power transmission, such as audio systems and broadcasting equipment.
Through the SJ_Multi-EPI technology, the SiHFBF30S-VB provides excellent performance, especially in high-voltage, high-current application scenarios, and can provide users with high-efficiency, low-loss solutions to ensure system reliability and long-term stability.
1. **High-voltage power management and switching power supply**:
Since **SiHFBF30S-VB** MOSFET has a maximum drain-source voltage of 900V, it is particularly suitable for high-voltage switching power supplies and AC-DC power modules. Its low on-resistance can effectively reduce power loss and improve the conversion efficiency of power supply. It is widely used in power supply, industrial power supply, UPS system and solar inverter.
2. **Inverter and frequency converter**:
In inverters and frequency converters, **SiHFBF30S-VB** can be used to convert DC power to AC power, which is particularly suitable for applications requiring high voltage control. Its high voltage capability gives it better resistance to shock during power conversion, and is suitable for use in inverter circuits in renewable energy systems such as wind power generation and photovoltaic power generation.
3. **Battery Management System (BMS)**:
In electric vehicles, power tools and other energy storage devices, **SiHFBF30S-VB** can help achieve efficient battery management. The high voltage tolerance of MOSFET makes it stable and reliable in battery charge and discharge control, and can handle high current systems to optimize battery life and safety.
4. **Industrial Automation and Motor Drive**:
In industrial automation, **SiHFBF30S-VB** is widely used to drive motor control systems. Its high voltage capability and low on-resistance make it very suitable for application in various industrial motor drives, servo motor control systems and industrial robots.
5. **Electric Vehicles and Electrified Transportation**:
In electric vehicles and electrified transportation systems, **SiHFBF30S-VB** can be used for battery charge and discharge management and high-voltage power supply control. Due to its ability to withstand high voltages of 900V, MOSFETs are widely used in battery management systems (BMS), charging piles and inverter systems in electric vehicles, ensuring safe and efficient operation of vehicles under high power demands.
6. Audio power amplifiers and high-frequency power applications:
The SiHFBF30S-VB is also suitable for audio power amplifiers and other high-frequency power applications. Its high voltage tolerance and low switching losses make it suitable for use in equipment that requires high-frequency, high-power transmission, such as audio systems and broadcasting equipment.
Through the SJ_Multi-EPI technology, the SiHFBF30S-VB provides excellent performance, especially in high-voltage, high-current application scenarios, and can provide users with high-efficiency, low-loss solutions to ensure system reliability and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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