SiHFBE30S-VB Product details
Product introduction:
SiHFBE30S-VB is a high-voltage N-channel MOSFET in TO263 package for high-voltage power switching applications. Its maximum drain-source voltage (VDS) is 800V, which can withstand higher voltage loads and is ideal for handling high voltage and high power. The maximum drain current of this MOSFET is 7A, which supports higher current operation and is suitable for medium-power power management and power conversion applications. SiHFBE30S-VB is based on SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) is 850mΩ@VGS=10V), which can effectively reduce conduction losses and improve switching efficiency. Its 3.5V gate threshold voltage (Vth) ensures that it can be turned on at a lower gate drive voltage, providing support for efficient power supply design.
---
**SiHFBE30S-VB MOSFET
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | 850mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: SiHFBE30S-VB
- **Package Type**: TO263
- **Configuration**: Single N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 800V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 850mΩ @VGS=10V
- **Maximum Drain Current (ID)**: 7A
- **Technology Type**: SJ_Multi-EPI Technology
---
**SiHFBE30S-VB MOSFET
Domain and module applications:
1. **High-voltage switch-mode power supply (SMPS)**
SiHFBE30S-VB is suitable for high-voltage switch-mode power supplies (SMPS), especially in applications that require 800V voltage tolerance. It can be used as the main switching element in the design of medium and high voltage power supplies such as AC-DC converters, DC-DC converters, and power adapters, providing efficient power conversion and low power consumption, and is widely used in industrial power supplies, home appliances, and power equipment.
2. **Power electronics and energy management systems**
In power electronics and energy management systems, SiHFBE30S-VB can undertake functions such as power conversion and inversion. It is particularly suitable for solar inverters, battery management systems (BMS), and uninterruptible power supplies (UPS). It can efficiently handle high voltage applications, reduce switching losses, and improve the overall energy efficiency of the system.
3. **Power tools and home appliances**
SiHFBE30S-VB is suitable for power switching applications in power tools and home appliances. It can withstand higher voltages and currents, ensuring stability of power tools and household appliances during high-power operation. It is suitable for modules that require efficient power control, such as power tools, motor drives, and heating devices.
4. **Automotive electronics and electric vehicle (EV) applications**
SiHFBE30S-VB is suitable for power control systems in electric vehicles and hybrid vehicles, especially in battery management, power converters, chargers, and electric drive systems. Its 800V withstand voltage capability is suitable for handling the high voltage requirements of battery systems in electric vehicles, and can provide efficient power conversion and reliable power management.
5. **High-frequency switching circuits**
In some high-frequency, high-power switching circuits, SiHFBE30S-VB is an ideal choice. It can be used in communication equipment, power adapters, UPS power supplies, and other occasions that require stable operation in high-frequency and high-voltage environments. Its low on-resistance characteristics ensure efficient switching performance and low heat loss, and are suitable for high-frequency switching applications that require high efficiency.
Through these application areas, the SiHFBE30S-VB MOSFET provides a high-efficiency, low-loss solution in high voltage and high current environments, and is widely used in multiple high-voltage power management, conversion and control systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image