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SiHFBE30L-E3-VB Product details
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1. Product Introduction (SiHFBE30L-E3-VB)
The SiHFBE30L-E3-VB is a single N-Channel MOSFET in a TO262 package with a high withstand voltage of 850V and a maximum drain current of 4.1A. This MOSFET uses Trench technology and has a relatively high RDS(ON) of 2700mΩ (@VGS=10V), which is suitable for applications in high voltage environments. Its Vth (turn-on voltage) is 3.5V, which enables it to operate at a standard control voltage, especially for industrial power supplies and power equipment that require high withstand voltage.
The SiHFBE30L-E3-VB is particularly suitable for applications that require 850V withstand voltage, high reliability and medium current carrying capacity, such as power management, industrial control, motor drive, and uninterruptible power supply (UPS) systems. The device functions effectively in these areas, providing stable voltage and current control.
The SiHFBE30L-E3-VB is a single N-Channel MOSFET in a TO262 package with a high withstand voltage of 850V and a maximum drain current of 4.1A. This MOSFET uses Trench technology and has a relatively high RDS(ON) of 2700mΩ (@VGS=10V), which is suitable for applications in high voltage environments. Its Vth (turn-on voltage) is 3.5V, which enables it to operate at a standard control voltage, especially for industrial power supplies and power equipment that require high withstand voltage.
The SiHFBE30L-E3-VB is particularly suitable for applications that require 850V withstand voltage, high reliability and medium current carrying capacity, such as power management, industrial control, motor drive, and uninterruptible power supply (UPS) systems. The device functions effectively in these areas, providing stable voltage and current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | 2700mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 850V | 3.5V | 4.1A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. **Detailed parameter description**
| **Parameter** | **Description** |
|-------------------------|---------------------------------------------------------------|
| **Model** | SiHFBE30L-E3-VB |
| **Package type** | TO262 |
| **Configuration** | Single N-Channel |
| **VDS (drain-source voltage)** | 850V |
| **VGS (gate-source voltage)** | ±30V |
| **Vth (throw-on voltage)** | 3.5V |
| **RDS(ON) (on-resistance)** | 2700mΩ@VGS=10V |
| **ID (drain current)** | 4.1A |
| **Technology** | Trench |
| **Maximum power consumption** | 60W |
| **Operating temperature range** | -55°C to 150°C |
| **Thermal resistance (package)** | 62°C/W |
| **Qg (gate charge)** | 60nC |
| **Packaging material** | Epoxy|
| **Parameter** | **Description** |
|-------------------------|---------------------------------------------------------------|
| **Model** | SiHFBE30L-E3-VB |
| **Package type** | TO262 |
| **Configuration** | Single N-Channel |
| **VDS (drain-source voltage)** | 850V |
| **VGS (gate-source voltage)** | ±30V |
| **Vth (throw-on voltage)** | 3.5V |
| **RDS(ON) (on-resistance)** | 2700mΩ@VGS=10V |
| **ID (drain current)** | 4.1A |
| **Technology** | Trench |
| **Maximum power consumption** | 60W |
| **Operating temperature range** | -55°C to 150°C |
| **Thermal resistance (package)** | 62°C/W |
| **Qg (gate charge)** | 60nC |
| **Packaging material** | Epoxy|
Domain and module applications：
3. **Application fields and module examples**
# 1) **Switching Power Supply (SMPS)**
**SiHFBE30L-E3-VB** can be widely used in **Switching Power Supply (SMPS)** as a power switching element for voltage conversion in **AC-DC** or **DC-DC converter**. Although its on-resistance is relatively high (**2700mΩ**), its **850V** high withstand voltage makes it suitable for power conversion systems in high voltage environments, such as power supply for industrial equipment. It is suitable for low current but high voltage conversion occasions, helping to improve system reliability.
# 6) **Industrial Control System**
In **Industrial Control System**, **SiHFBE30L-E3-VB** can be used to control high power loads as a load control switching element. Especially for electrical equipment that requires **850V** high voltage, it can withstand high voltage and work stably. Common applications include industrial robot control, power tool drive systems, and power control in automated production lines.
# 7) **High Voltage Power Supply**
This device is suitable for high voltage power supply systems, especially those requiring **850V** voltage regulation and conversion. It is suitable for power systems that require high withstand voltage and medium current, such as industrial power supplies, inverters in photovoltaic power generation systems, and power distribution control systems.
Summary:
**SiHFBE30L-E3-VB** is a single N-Channel MOSFET with **850V** withstand voltage and **4.1A** current capability. It uses **TO262** package and is suitable for a variety of high voltage and low current demand applications. Its application range includes switching power supplies, motor drives, battery management systems, UPS power supplies, and power factor correction circuits. The high withstand voltage of this MOSFET makes it very suitable for high voltage power supply systems and industrial equipment, which can effectively improve power efficiency and ensure stable operation of the system.
# 1) **Switching Power Supply (SMPS)**
**SiHFBE30L-E3-VB** can be widely used in **Switching Power Supply (SMPS)** as a power switching element for voltage conversion in **AC-DC** or **DC-DC converter**. Although its on-resistance is relatively high (**2700mΩ**), its **850V** high withstand voltage makes it suitable for power conversion systems in high voltage environments, such as power supply for industrial equipment. It is suitable for low current but high voltage conversion occasions, helping to improve system reliability.
# 6) **Industrial Control System**
In **Industrial Control System**, **SiHFBE30L-E3-VB** can be used to control high power loads as a load control switching element. Especially for electrical equipment that requires **850V** high voltage, it can withstand high voltage and work stably. Common applications include industrial robot control, power tool drive systems, and power control in automated production lines.
# 7) **High Voltage Power Supply**
This device is suitable for high voltage power supply systems, especially those requiring **850V** voltage regulation and conversion. It is suitable for power systems that require high withstand voltage and medium current, such as industrial power supplies, inverters in photovoltaic power generation systems, and power distribution control systems.
Summary:
**SiHFBE30L-E3-VB** is a single N-Channel MOSFET with **850V** withstand voltage and **4.1A** current capability. It uses **TO262** package and is suitable for a variety of high voltage and low current demand applications. Its application range includes switching power supplies, motor drives, battery management systems, UPS power supplies, and power factor correction circuits. The high withstand voltage of this MOSFET makes it very suitable for high voltage power supply systems and industrial equipment, which can effectively improve power efficiency and ensure stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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