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SIHF9Z34S-VB Product details
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SIHF9Z34S-VB Product Introduction
SIHF9Z34S-VB is a P-channel power MOSFET based on Trench technology, packaged in TO263. This MOSFET is designed for high current, high power applications and can withstand drain-source voltage (V_DS) up to -60V. It has a low on-resistance (R_DS(ON) 64mΩ at V_GS = 10V), which can significantly reduce power loss and improve overall system efficiency. With a maximum drain current (I_D) of -30A, it is suitable for a variety of high-efficiency power management, switching power supplies and battery management systems.
SIHF9Z34S-VB has a threshold voltage (V_th) of -1.7V, which is suitable for low voltage driven switching applications and is stable in negative voltage environments. Trench technology enables it to have better switching performance, lower switching losses, and can work reliably at high currents and high voltages. It is widely used in power tools, battery management, power converters and other fields.
SIHF9Z34S-VB is a P-channel power MOSFET based on Trench technology, packaged in TO263. This MOSFET is designed for high current, high power applications and can withstand drain-source voltage (V_DS) up to -60V. It has a low on-resistance (R_DS(ON) 64mΩ at V_GS = 10V), which can significantly reduce power loss and improve overall system efficiency. With a maximum drain current (I_D) of -30A, it is suitable for a variety of high-efficiency power management, switching power supplies and battery management systems.
SIHF9Z34S-VB has a threshold voltage (V_th) of -1.7V, which is suitable for low voltage driven switching applications and is stable in negative voltage environments. Trench technology enables it to have better switching performance, lower switching losses, and can work reliably at high currents and high voltages. It is widely used in power tools, battery management, power converters and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
SIHF9Z34S-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 77mΩ (at V_GS = 4.5V)
- 64mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: -30A
- **Technology**: Trench (Trench technology)
- **Input capacitance (C_iss)**: About 1300pF (typical value)
- **Reverse recovery time (T_rr)**: about 45ns (typical value)
- **Maximum power dissipation (P_D)**: about 70W (depending on heat dissipation conditions)
The Trench technology of this MOSFET reduces on-resistance and switching losses by optimizing the channel structure, enabling it to operate efficiently under high current loads and provide better thermal management and system efficiency. Its low R_DS(ON) characteristics are particularly suitable for high-power switching power supplies and battery management systems.
- **Package type**: TO263
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 77mΩ (at V_GS = 4.5V)
- 64mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: -30A
- **Technology**: Trench (Trench technology)
- **Input capacitance (C_iss)**: About 1300pF (typical value)
- **Reverse recovery time (T_rr)**: about 45ns (typical value)
- **Maximum power dissipation (P_D)**: about 70W (depending on heat dissipation conditions)
The Trench technology of this MOSFET reduces on-resistance and switching losses by optimizing the channel structure, enabling it to operate efficiently under high current loads and provide better thermal management and system efficiency. Its low R_DS(ON) characteristics are particularly suitable for high-power switching power supplies and battery management systems.
Domain and module applications：
Application fields and module examples: 1. **Power management system (DC-DC converter)**: SIHF9Z34S-VB is used as a negative switching element in a DC-DC converter to effectively regulate voltage and improve conversion efficiency. Its low on-resistance ensures minimal loss in current transmission, and is suitable for industrial power supplies, communication equipment power supplies, and power management modules for high-power electronic products. This MOSFET can handle large current loads and ensure efficient power conversion. 2. **Battery management system (BMS)**: SIHF9Z34S-VB is used as a switching element in a battery management system to accurately control the charging and discharging process of the battery. Its high current carrying capacity and low on-resistance make it ideal for electric vehicles (EVs), energy storage systems, and portable battery management applications. The fast switching characteristics and low loss design of MOSFET help improve battery efficiency and extend battery life.
3. **Power tools and home appliances**:
SIHF9Z34S-VB is very effective as a negative switching element in the motor drive system of power tools and home appliances. It can provide stable power control, reduce energy loss, and improve system efficiency in power tools (such as electric screwdrivers, electric vacuum cleaners) and home appliances (such as washing machines, air conditioners).
4. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**:
In the battery management system of electric vehicles and hybrid electric vehicles, SIHF9Z34S-VB is used as a P-channel MOSFET for battery charge and discharge control and power conversion modules. This MOSFET can help efficiently control the flow of battery current and maintain low-loss operation under high current loads, optimizing battery use and energy efficiency.
5. **Motor drive system**:
SIHF9Z34S-VB is widely used in industrial motor drive and control systems. Due to its low on-resistance and high current capability, this MOSFET can effectively drive high-power motors, provide smooth start-stop processes and stable working conditions, and is widely used in motor drive systems such as automation equipment, robots, fans, pumps, etc.
6. **High-efficiency power amplifier power supply**:
In high-efficiency power amplifier and audio amplifier power supply systems, SIHF9Z34S-VB as a switching element can significantly reduce power loss and improve power conversion efficiency. It is used as a core component in audio amplifiers, telecommunications equipment and wireless communications to provide efficient power management and better system performance.
7. **Solar inverter and energy storage system**:
In solar inverters and other renewable energy storage systems, SIHF9Z34S-VB is used for power conversion and battery charge and discharge control. The high current carrying capacity and low conduction loss of MOSFET ensure efficient energy conversion between solar panels and battery systems, optimizing the overall efficiency of energy storage systems.
Through the above applications, SIHF9Z34S-VB provides excellent performance in the fields of power management, power tools, battery management and power control. Its low loss and high efficiency make it an ideal choice in modern power-intensive applications.
3. **Power tools and home appliances**:
SIHF9Z34S-VB is very effective as a negative switching element in the motor drive system of power tools and home appliances. It can provide stable power control, reduce energy loss, and improve system efficiency in power tools (such as electric screwdrivers, electric vacuum cleaners) and home appliances (such as washing machines, air conditioners).
4. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**:
In the battery management system of electric vehicles and hybrid electric vehicles, SIHF9Z34S-VB is used as a P-channel MOSFET for battery charge and discharge control and power conversion modules. This MOSFET can help efficiently control the flow of battery current and maintain low-loss operation under high current loads, optimizing battery use and energy efficiency.
5. **Motor drive system**:
SIHF9Z34S-VB is widely used in industrial motor drive and control systems. Due to its low on-resistance and high current capability, this MOSFET can effectively drive high-power motors, provide smooth start-stop processes and stable working conditions, and is widely used in motor drive systems such as automation equipment, robots, fans, pumps, etc.
6. **High-efficiency power amplifier power supply**:
In high-efficiency power amplifier and audio amplifier power supply systems, SIHF9Z34S-VB as a switching element can significantly reduce power loss and improve power conversion efficiency. It is used as a core component in audio amplifiers, telecommunications equipment and wireless communications to provide efficient power management and better system performance.
7. **Solar inverter and energy storage system**:
In solar inverters and other renewable energy storage systems, SIHF9Z34S-VB is used for power conversion and battery charge and discharge control. The high current carrying capacity and low conduction loss of MOSFET ensure efficient energy conversion between solar panels and battery systems, optimizing the overall efficiency of energy storage systems.
Through the above applications, SIHF9Z34S-VB provides excellent performance in the fields of power management, power tools, battery management and power control. Its low loss and high efficiency make it an ideal choice in modern power-intensive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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