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SiHF9Z24L-E3-VB Product details
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SiHF9Z24L-E3-VB Product Introduction
**SiHF9Z24L-E3-VB** is a high-performance **unipolar P-channel MOSFET**, using **TO262 package**, with **low on-resistance (RDS(ON))** and **high current carrying capacity**, which is very suitable for high-efficiency power management and power control applications. The maximum **drain-source voltage (VDS)** of this MOSFET is **-60V**, which can work stably in a negative voltage environment and is suitable for **battery management, motor control and power conversion** and other fields. Its **low on-resistance** is **16mΩ** (at **VGS=10V**) and **high drain current carrying capacity** (maximum **-53A**), making it particularly suitable for high-current and low-power switching applications. Combined with **Trench technology**, this MOSFET provides efficient current control and low switching losses, ensuring that the system still has good performance under long-term operation.
**SiHF9Z24L-E3-VB** is a high-performance **unipolar P-channel MOSFET**, using **TO262 package**, with **low on-resistance (RDS(ON))** and **high current carrying capacity**, which is very suitable for high-efficiency power management and power control applications. The maximum **drain-source voltage (VDS)** of this MOSFET is **-60V**, which can work stably in a negative voltage environment and is suitable for **battery management, motor control and power conversion** and other fields. Its **low on-resistance** is **16mΩ** (at **VGS=10V**) and **high drain current carrying capacity** (maximum **-53A**), making it particularly suitable for high-current and low-power switching applications. Combined with **Trench technology**, this MOSFET provides efficient current control and low switching losses, ensuring that the system still has good performance under long-term operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-P | -60V | -2V | -53A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-P |
SiHF9Z24L-E3-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- **16mΩ** @VGS = 10V
- **Maximum drain current (ID)**: -53A
- **Maximum power dissipation**: 150W (based on thermal management design)
- **Operating temperature range**: -55°C to +150°C
- **RθJC (junction-to-case thermal resistance)**: 2°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 70°C/W
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- **16mΩ** @VGS = 10V
- **Maximum drain current (ID)**: -53A
- **Maximum power dissipation**: 150W (based on thermal management design)
- **Operating temperature range**: -55°C to +150°C
- **RθJC (junction-to-case thermal resistance)**: 2°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 70°C/W
- **Technology**: Trench
Domain and module applications：
Applicable fields and module examples
1. **Motor control and drive**
**SiHF9Z24L-E3-VB** is suitable for **motor control systems**, especially in **DC Motor** and **Stepper Motor** drives. In these applications, MOSFET needs to carry large currents and switch current directions quickly. **SiHF9Z24L-E3-VB** has a **maximum drain current** of **-53A**, which can provide strong driving capabilities. Its **low on-resistance** and **high current carrying capacity** enable it to work under high load conditions, ensuring efficient and stable operation of the motor system, especially in **industrial automation, robot control** and **power tools**.
2. **Battery Management System (BMS)**
**SiHF9Z24L-E3-VB** can be used in **battery management systems**, especially **charge and discharge control** of **electric vehicles (EVs)** and **energy storage systems**. Due to the **high current carrying capacity** and **low on-resistance** of this MOSFET, it can effectively control the charging and discharging process of the battery, reduce power loss and improve charging efficiency. Its **-60V** maximum drain-source voltage is suitable for medium and high voltage battery packs, ensuring stable operation of the battery pack during high current charging and discharging, especially playing a key role in **battery protection circuit** and **battery charger** in electric vehicle battery management systems.
3. **DC-DC converter**
In **DC-DC converter** applications, **SiHF9Z24L-E3-VB** can be used in **power conversion modules**, especially those requiring **high current output** and **high conversion efficiency**. Its **low RDS(ON)** and **high current carrying capacity** can help reduce power loss in the converter and improve the overall efficiency of the system. It is suitable for **power management systems such as power adapters, solar inverters, power factor correction (PFC), and can provide high reliability in high-efficiency power modules.
4. **Power Adapters and Battery Chargers**
**SiHF9Z24L-E3-VB** is also well suited for **power adapters** and **battery chargers**. Due to its **-60V drain-source voltage** and **high current carrying capability**, it has a wide range of applications in **battery charging** and **power conversion modules** for **portable electronic devices. This MOSFET is suitable for **low voltage to medium voltage** range battery charging and power management, providing stable current switching control to ensure stable system operation and extend the life of the device.
5. **Switching Power Supply (SMPS)**
In **Switching Power Supply** (**SMPS**) applications, **SiHF9Z24L-E3-VB** can be used in **AC-DC converters, isolated power modules** and **DC-DC converters**. These applications require the MOSFET to operate reliably in high current and high power environments. Its **lower RDS(ON)** and **higher current carrying capacity** enable it to effectively reduce the heat generation of the system and improve the power conversion efficiency, which is particularly suitable for **industrial power supply, communication power supply** and other fields that require high efficiency and stable current control.
6. **High-efficiency lighting control**
**SiHF9Z24L-E3-VB** is also suitable for **LED drivers** and **high-power lighting control**. In **LED lighting systems**, it can effectively control the flow of current, improve the efficiency of the lighting system, and extend its service life. The **low on-resistance** of this MOSFET enables efficient control under **high current load**, which is suitable for **high-power LED lighting, stage lighting, street lighting** and other applications.
1. **Motor control and drive**
**SiHF9Z24L-E3-VB** is suitable for **motor control systems**, especially in **DC Motor** and **Stepper Motor** drives. In these applications, MOSFET needs to carry large currents and switch current directions quickly. **SiHF9Z24L-E3-VB** has a **maximum drain current** of **-53A**, which can provide strong driving capabilities. Its **low on-resistance** and **high current carrying capacity** enable it to work under high load conditions, ensuring efficient and stable operation of the motor system, especially in **industrial automation, robot control** and **power tools**.
2. **Battery Management System (BMS)**
**SiHF9Z24L-E3-VB** can be used in **battery management systems**, especially **charge and discharge control** of **electric vehicles (EVs)** and **energy storage systems**. Due to the **high current carrying capacity** and **low on-resistance** of this MOSFET, it can effectively control the charging and discharging process of the battery, reduce power loss and improve charging efficiency. Its **-60V** maximum drain-source voltage is suitable for medium and high voltage battery packs, ensuring stable operation of the battery pack during high current charging and discharging, especially playing a key role in **battery protection circuit** and **battery charger** in electric vehicle battery management systems.
3. **DC-DC converter**
In **DC-DC converter** applications, **SiHF9Z24L-E3-VB** can be used in **power conversion modules**, especially those requiring **high current output** and **high conversion efficiency**. Its **low RDS(ON)** and **high current carrying capacity** can help reduce power loss in the converter and improve the overall efficiency of the system. It is suitable for **power management systems such as power adapters, solar inverters, power factor correction (PFC), and can provide high reliability in high-efficiency power modules.
4. **Power Adapters and Battery Chargers**
**SiHF9Z24L-E3-VB** is also well suited for **power adapters** and **battery chargers**. Due to its **-60V drain-source voltage** and **high current carrying capability**, it has a wide range of applications in **battery charging** and **power conversion modules** for **portable electronic devices. This MOSFET is suitable for **low voltage to medium voltage** range battery charging and power management, providing stable current switching control to ensure stable system operation and extend the life of the device.
5. **Switching Power Supply (SMPS)**
In **Switching Power Supply** (**SMPS**) applications, **SiHF9Z24L-E3-VB** can be used in **AC-DC converters, isolated power modules** and **DC-DC converters**. These applications require the MOSFET to operate reliably in high current and high power environments. Its **lower RDS(ON)** and **higher current carrying capacity** enable it to effectively reduce the heat generation of the system and improve the power conversion efficiency, which is particularly suitable for **industrial power supply, communication power supply** and other fields that require high efficiency and stable current control.
6. **High-efficiency lighting control**
**SiHF9Z24L-E3-VB** is also suitable for **LED drivers** and **high-power lighting control**. In **LED lighting systems**, it can effectively control the flow of current, improve the efficiency of the lighting system, and extend its service life. The **low on-resistance** of this MOSFET enables efficient control under **high current load**, which is suitable for **high-power LED lighting, stage lighting, street lighting** and other applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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