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SiHF9620S-GE3-VB Product details
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SiHF9620S-GE3-VB is a high-performance single P-channel MOSFET in a TO263 package. This product is designed for high-efficiency power switching applications, especially for circuits requiring negative voltage control. The maximum drain-source voltage (VDS) of the MOSFET is -200V, which is suitable for applications with higher voltage requirements. It also has a low on-resistance, ensuring low power loss under high current conditions. It is suitable for a variety of electronic devices, such as switching power supplies, battery management systems, power regulators, and other power management modules that require high efficiency and low loss.
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**SiHF9620S-GE3-VB MOSFET
SiHF9620S-GE3-VB is a high-performance single P-channel MOSFET in a TO263 package. This product is designed for high-efficiency power switching applications, especially for circuits requiring negative voltage control. The maximum drain-source voltage (VDS) of the MOSFET is -200V, which is suitable for applications with higher voltage requirements. It also has a low on-resistance, ensuring low power loss under high current conditions. It is suitable for a variety of electronic devices, such as switching power supplies, battery management systems, power regulators, and other power management modules that require high efficiency and low loss.
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**SiHF9620S-GE3-VB MOSFET
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -2V | -4A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -2V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -2V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
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- **Model**: SiHF9620S-GE3-VB
- **Package type**: TO263
- **Configuration**: Single P-Channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 2400mΩ @VGS=4.5V
- 2000mΩ @VGS=10V
- **Maximum drain current (ID)**: -4A
- **Technology type**: Trench technology (suitable for efficient power control)
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**SiHF9620S-GE3-VB MOSFET
- **Model**: SiHF9620S-GE3-VB
- **Package type**: TO263
- **Configuration**: Single P-Channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 2400mΩ @VGS=4.5V
- 2000mΩ @VGS=10V
- **Maximum drain current (ID)**: -4A
- **Technology type**: Trench technology (suitable for efficient power control)
---
**SiHF9620S-GE3-VB MOSFET
Domain and module applications：
**
1. **Switching Power Supply (SMPS)**
SiHF9620S-GE3-VB has a low RDS(ON) value, which enables it to have low energy loss in switching power supply applications. It can provide efficient switching performance in negative voltage control environments, especially suitable for modules such as DC-DC converters and battery chargers that require stable voltage control.
2. **Power Regulation and Battery Management System**
As a P-channel MOSFET, SiHF9620S-GE3-VB is widely used in battery management systems (BMS), especially in situations where efficient switching and current protection are required. It can handle large current changes during battery charging and discharging, providing stable current control and protection functions.
3. **Power Tools and Consumer Electronics**
In power tools and other consumer electronics, SiHF9620S-GE3-VB can be used as a power control switch to ensure high efficiency and low loss during high power conversion. It is particularly suitable for electric drive modules with high voltage and current requirements.
4. **Power Electronics and Power Modules**
In high voltage and high current environments, the SiHF9620S-GE3-VB provides an efficient and stable option, especially for power conversion and power management modules that require negative voltage MOSFETs, such as inverter designs for battery-driven systems and solar panels.
Through these application examples, the SiHF9620S-GE3-VB can help designers provide stable, low-loss power management solutions in situations where high efficiency and high current are required.
1. **Switching Power Supply (SMPS)**
SiHF9620S-GE3-VB has a low RDS(ON) value, which enables it to have low energy loss in switching power supply applications. It can provide efficient switching performance in negative voltage control environments, especially suitable for modules such as DC-DC converters and battery chargers that require stable voltage control.
2. **Power Regulation and Battery Management System**
As a P-channel MOSFET, SiHF9620S-GE3-VB is widely used in battery management systems (BMS), especially in situations where efficient switching and current protection are required. It can handle large current changes during battery charging and discharging, providing stable current control and protection functions.
3. **Power Tools and Consumer Electronics**
In power tools and other consumer electronics, SiHF9620S-GE3-VB can be used as a power control switch to ensure high efficiency and low loss during high power conversion. It is particularly suitable for electric drive modules with high voltage and current requirements.
4. **Power Electronics and Power Modules**
In high voltage and high current environments, the SiHF9620S-GE3-VB provides an efficient and stable option, especially for power conversion and power management modules that require negative voltage MOSFETs, such as inverter designs for battery-driven systems and solar panels.
Through these application examples, the SiHF9620S-GE3-VB can help designers provide stable, low-loss power management solutions in situations where high efficiency and high current are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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