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SiHF9610S-VB Product details

Product introduction:

Product Introduction - SiHF9610S-VB

**SiHF9610S-VB** is a **unipolar P-Channel MOSFET** in **TO263** package. It has **200V** high withstand voltage capability and is designed for high voltage and high power applications. Its **Vth** (threshold voltage) is **-3.5V**, which enables it to start at low gate voltage and adapt to the needs of various power supplies and drive circuits. This product has **RDS(ON)** of **600mΩ** (at **VGS = 4.5V**) and **500mΩ** (at **VGS = 10V**), which is a medium on-resistance MOSFET and is suitable for use in some switching circuits that require high current and high voltage.

Using **Trench technology**, SiHF9610S-VB provides lower on-resistance and efficient switching performance, which is particularly suitable for high-power, low-loss application scenarios. This MOSFET can be widely used in motor drive, switching power supply, inverter, battery management system (BMS) and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -200V -3.5V -11A 500mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -200V -3.5V -11A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -200V -3.5V -11A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
Detailed parameter description

- **Package type(Package)**: TO263
- **Configuration(Configuration)**: Unipolar P-Channel MOSFET
- **Drain-source voltage(VDS)**: -200V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: -3.5V
- **On-resistance(RDS(ON))**:
- 600mΩ @ VGS = 4.5V
- 500mΩ @ VGS = 10V
- **Maximum drain current(ID)**: -11A
- **Maximum power dissipation(Pd)**: 75W
- **Operating temperature range(Tj)**: -55°C to 150°C
- **Gate charge(Qg)**: 80nC @ VDS = 160V, VGS = 10V
- **Reverse recovery time (trr)**: 120ns
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Motor Drives**
**SiHF9610S-VB** can be widely used in **motor drive** systems, especially in **industrial motor** and **home appliance motor** drives. The **-11A** maximum drain current and **-200V** drain-source voltage capability of this MOSFET make it very suitable for switching applications with high current drive and high voltage loads. Through its lower on-resistance, it can effectively reduce power loss in motor drive systems and improve system efficiency.

2. **Switching Power Supplies**
In **switching power supplies** (such as **AC-DC converters** and **DC-DC converters**), SiHF9610S-VB is suitable for power supply systems with high voltage input. Its **-200V** high withstand voltage capability enables it to withstand higher input voltages and provide stable switching performance. The MOSFET's **RDS(ON)** value also helps improve power conversion efficiency, making it particularly suitable for **high-efficiency switching power supply** designs.

3. **Inverters**
**SiHF9610S-VB** can also be used in **inverters**, such as in **photovoltaic inverter** or **wind inverter** systems. It can effectively convert DC power to AC power, especially in high-voltage power supplies and battery systems, playing an important role. Due to its high current and voltage handling capabilities, it is suitable for use in high-power inverters.

4. **Battery Management Systems (BMS)**
In **battery management systems (BMS)**, SiHF9610S-VB can be used as a key switching element in **electric vehicles (EV)** or **energy storage systems (ESS)**. This MOSFET can effectively handle the charging and discharging process of the battery pack, especially in high voltage environments. Its current capability of -11A and withstand voltage of -200V make it suitable for high voltage and high current management of battery packs.

5. Power Conversion Modules
Due to its low on-resistance and high withstand voltage, the SiHF9610S-VB is suitable for power conversion modules. Whether in the converter or the regulator, this MOSFET can efficiently switch and optimize the power transmission of the system. Its Trench technology provides higher switching efficiency and reduces conversion losses, which is suitable for applications with high power transmission requirements.

6. Automotive Power Electronics
In automotive power electronics systems, the SiHF9610S-VB can be used in electric drive systems, chargers or powertrain control modules. Its high voltage withstand capability enables it to withstand complex electrical loads in **automotive electrical systems**, especially in the drive and charging systems of **hybrid electric vehicles (HEV)** and **pure electric vehicles (EV)**.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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