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SiHF9610S-GE3-VB Product details
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SiHF9610S-GE3-VB Product Introduction
SiHF9610S-GE3-VB is a P-channel power MOSFET based on Trench technology, packaged in TO263. This MOSFET has high voltage tolerance (can withstand up to -200V) and low on-resistance (R_DS(ON) 2000mΩ at V_GS = 10V). Its threshold voltage is -2V, which is suitable for low-voltage driven switching applications, especially in negative voltage environments.
SiHF9610S-GE3-VB is suitable for various power management and power conversion systems, especially in situations requiring high-voltage loads and low conduction losses. Its Trench technology optimizes the switching characteristics, enabling it to have low switching losses and low on-resistance in high-efficiency power supply designs, which can meet the efficiency and stability requirements of modern power systems.
SiHF9610S-GE3-VB is a P-channel power MOSFET based on Trench technology, packaged in TO263. This MOSFET has high voltage tolerance (can withstand up to -200V) and low on-resistance (R_DS(ON) 2000mΩ at V_GS = 10V). Its threshold voltage is -2V, which is suitable for low-voltage driven switching applications, especially in negative voltage environments.
SiHF9610S-GE3-VB is suitable for various power management and power conversion systems, especially in situations requiring high-voltage loads and low conduction losses. Its Trench technology optimizes the switching characteristics, enabling it to have low switching losses and low on-resistance in high-efficiency power supply designs, which can meet the efficiency and stability requirements of modern power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -2V | -4A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -2V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -200V | -2V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
SiHF9610S-GE3-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -200V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- 2400mΩ (at V_GS = 4.5V)
- 2000mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: -4A
- **Technology**: Trench
- **Input capacitance (C_iss)**: About 800pF (typical value)
- **Reverse recovery time (T_rr)**: about 60ns (typical value)
- **Maximum power dissipation (P_D)**: about 25W (depending on heat dissipation conditions)
The high voltage withstand capability (-200V) of this MOSFET enables it to handle higher reverse voltages, making it suitable for high voltage and efficient power management systems. At the same time, its low on-resistance and fast switching characteristics make it ideal for power applications requiring high efficiency and high power density.
- **Package type**: TO263
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -200V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- 2400mΩ (at V_GS = 4.5V)
- 2000mΩ (at V_GS = 10V)
- **Maximum drain current (I_D)**: -4A
- **Technology**: Trench
- **Input capacitance (C_iss)**: About 800pF (typical value)
- **Reverse recovery time (T_rr)**: about 60ns (typical value)
- **Maximum power dissipation (P_D)**: about 25W (depending on heat dissipation conditions)
The high voltage withstand capability (-200V) of this MOSFET enables it to handle higher reverse voltages, making it suitable for high voltage and efficient power management systems. At the same time, its low on-resistance and fast switching characteristics make it ideal for power applications requiring high efficiency and high power density.
Domain and module applications：
Application fields and module examples: 1. **Power management system (DC-DC converter)**:
SiHF9610S-GE3-VB provides stable switching characteristics in high voltage environments and is suitable for use in DC-DC converters. Especially in situations where negative voltage input and efficient conversion are required, such as power distribution and power management systems, it can effectively improve the overall efficiency of the system and reduce conduction losses. It is suitable for applications such as industrial automation, power communications, and vehicle power supplies.
2. **Inverter and battery charging system**:
Due to its high voltage tolerance, SiHF9610S-GE3-VB can be widely used in inverter and battery charging systems, especially in systems using negative voltage. It can work in photovoltaic inverters, wind power generation systems, or other energy conversion systems, and perform efficient power conversion as a negative switching element to ensure system stability and efficiency.
3. **Power tools and home appliances**:
In power modules for power tools and home appliances, the SiHF9610S-GE3-VB can be used for motor drive and power management. It is suitable for applications where high voltage loads are required, especially in devices that require negative voltage power supply, such as vacuum cleaners, washing machines, electric shavers, etc. This MOSFET can efficiently control the start, run and stop of the motor in these devices, providing a smooth working state.
4. **Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) Battery Management System**:
In the battery management system of electric vehicles and hybrid vehicles, the SiHF9610S-GE3-VB can be used as a switching element in the high-voltage battery pack, responsible for regulating the flow of current and ensuring the safety and stability of the battery during charging and discharging. Its high voltage tolerance makes it very suitable for negative voltage regulation and current management in the battery system, ensuring efficient charging and service life of the battery.
5. **Negative voltage power supply system**:
As a P-channel MOSFET, SiHF9610S-GE3-VB is particularly suitable for negative voltage power supply systems. It can be used as a core switching element in a reverse power management system and is widely used in power circuits that need to handle negative voltages, such as communication equipment, data transmission systems, and some industrial equipment that require high voltage stability.
Through these applications, SiHF9610S-GE3-VB demonstrates reliability and efficiency in the fields of efficient power management, battery protection, and negative voltage control, meeting the requirements of modern power electronics technology for high-performance switching elements.
SiHF9610S-GE3-VB provides stable switching characteristics in high voltage environments and is suitable for use in DC-DC converters. Especially in situations where negative voltage input and efficient conversion are required, such as power distribution and power management systems, it can effectively improve the overall efficiency of the system and reduce conduction losses. It is suitable for applications such as industrial automation, power communications, and vehicle power supplies.
2. **Inverter and battery charging system**:
Due to its high voltage tolerance, SiHF9610S-GE3-VB can be widely used in inverter and battery charging systems, especially in systems using negative voltage. It can work in photovoltaic inverters, wind power generation systems, or other energy conversion systems, and perform efficient power conversion as a negative switching element to ensure system stability and efficiency.
3. **Power tools and home appliances**:
In power modules for power tools and home appliances, the SiHF9610S-GE3-VB can be used for motor drive and power management. It is suitable for applications where high voltage loads are required, especially in devices that require negative voltage power supply, such as vacuum cleaners, washing machines, electric shavers, etc. This MOSFET can efficiently control the start, run and stop of the motor in these devices, providing a smooth working state.
4. **Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) Battery Management System**:
In the battery management system of electric vehicles and hybrid vehicles, the SiHF9610S-GE3-VB can be used as a switching element in the high-voltage battery pack, responsible for regulating the flow of current and ensuring the safety and stability of the battery during charging and discharging. Its high voltage tolerance makes it very suitable for negative voltage regulation and current management in the battery system, ensuring efficient charging and service life of the battery.
5. **Negative voltage power supply system**:
As a P-channel MOSFET, SiHF9610S-GE3-VB is particularly suitable for negative voltage power supply systems. It can be used as a core switching element in a reverse power management system and is widely used in power circuits that need to handle negative voltages, such as communication equipment, data transmission systems, and some industrial equipment that require high voltage stability.
Through these applications, SiHF9610S-GE3-VB demonstrates reliability and efficiency in the fields of efficient power management, battery protection, and negative voltage control, meeting the requirements of modern power electronics technology for high-performance switching elements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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