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SiHF8N50L-VB Product details
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Product Introduction - SiHF8N50L-VB
**SiHF8N50L-VB** is a **unipolar N-Channel MOSFET**, using **TO220F** package, with **650V** high voltage resistance, very suitable for providing stable switching performance in high voltage and high power applications. Its **Vth** (threshold voltage) is **3.5V**, and the supported **VGS** range is **±30V**, making it adaptable to a wide range of circuit design requirements. This product adopts **Plannar technology**, providing high efficiency and reliability, suitable for long-term, high-load operation.
**SiHF8N50L-VB** has **RDS(ON)** of **830mΩ**, with moderate on-resistance under **VGS = 10V**. Despite the higher on-resistance, it is still able to meet the needs of many medium and high power applications, especially in scenarios where high voltage and high current switching are required, such as power converters, switching power supplies, motor drives and inverters.
**SiHF8N50L-VB** is a **unipolar N-Channel MOSFET**, using **TO220F** package, with **650V** high voltage resistance, very suitable for providing stable switching performance in high voltage and high power applications. Its **Vth** (threshold voltage) is **3.5V**, and the supported **VGS** range is **±30V**, making it adaptable to a wide range of circuit design requirements. This product adopts **Plannar technology**, providing high efficiency and reliability, suitable for long-term, high-load operation.
**SiHF8N50L-VB** has **RDS(ON)** of **830mΩ**, with moderate on-resistance under **VGS = 10V**. Despite the higher on-resistance, it is still able to meet the needs of many medium and high power applications, especially in scenarios where high voltage and high current switching are required, such as power converters, switching power supplies, motor drives and inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Maximum power dissipation (Pd)**: 75W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Gate charge (Qg)**: 90nC @ VDS = 400V, VGS = 10V
- **Reverse recovery time (trr)**: 180ns
- **Technology**: Plannar
- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Maximum power dissipation (Pd)**: 75W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Gate charge (Qg)**: 90nC @ VDS = 400V, VGS = 10V
- **Reverse recovery time (trr)**: 180ns
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
1. **High-Power Switching Power Supplies**
**SiHF8N50L-VB** is suitable for **high-power switching power supplies**, such as **AC-DC converters** and **DC-DC converters**. Due to its **650V** high withstand voltage, it is suitable for use in power supply systems with high voltage input. **RDS(ON)** is **830mΩ**, which is suitable for applications with high requirements for conduction losses, especially in medium-power converters.
2. **Motor Drives**
This MOSFET is suitable for **motor drive** systems, especially in **industrial motors** or **household appliances**. **SiHF8N50L-VB** can provide reliable switching performance for motors, especially in systems that require high voltage and high current drive. Its **10A** drain current capability and **650V** drain-source voltage capability make it suitable for high-power drive requirements in industrial environments.
3. **Battery Management Systems (BMS)**
**SiHF8N50L-VB** plays an important role in **Battery Management Systems** (BMS), especially in **Electric Vehicles (EV)** or **Energy Storage Systems (ESS)**. Its high voltage tolerance enables it to withstand the high voltage of the battery pack, while its **10A** drain current capability ensures that it can handle the high current charging and discharging process. The use of this MOSFET helps optimize the battery charging and discharging efficiency, improve the battery life and system stability.
4. **Inverters**
In **renewable energy systems** such as **photovoltaic inverters** and **wind inverters**, **SiHF8N50L-VB** can be used for power conversion. It has wide applications in medium and high power inverters by converting **DC** to **AC**. Its high **650V** drain-source voltage capability enables it to handle the output voltage of photovoltaic panels, while its stable switching performance ensures efficient conversion.
5. **UPS Systems (Uninterruptible Power Supplies, UPS)**
**SiHF8N50L-VB** is also suitable for **UPS systems** to provide **uninterruptible power supply** to critical loads. In UPS systems, this MOSFET is used for efficient power switching and power management, especially in high-demand scenarios such as **large servers**, **data centers** and **hospital equipment**. Its high current carrying capacity and high voltage withstand capability enable it to maintain stable operation during **battery charging and discharging** and **power switching**.
6. **High-Power Power Modules**
**SiHF8N50L-VB** can be used as a key power switch component in **high-power power modules**, especially in **converters**, **regulators** and **voltage regulators**. Due to its low on-resistance and high current capability, it can effectively reduce power loss and improve system efficiency. In **industrial power systems**, it provides stable and reliable power transmission.
1. **High-Power Switching Power Supplies**
**SiHF8N50L-VB** is suitable for **high-power switching power supplies**, such as **AC-DC converters** and **DC-DC converters**. Due to its **650V** high withstand voltage, it is suitable for use in power supply systems with high voltage input. **RDS(ON)** is **830mΩ**, which is suitable for applications with high requirements for conduction losses, especially in medium-power converters.
2. **Motor Drives**
This MOSFET is suitable for **motor drive** systems, especially in **industrial motors** or **household appliances**. **SiHF8N50L-VB** can provide reliable switching performance for motors, especially in systems that require high voltage and high current drive. Its **10A** drain current capability and **650V** drain-source voltage capability make it suitable for high-power drive requirements in industrial environments.
3. **Battery Management Systems (BMS)**
**SiHF8N50L-VB** plays an important role in **Battery Management Systems** (BMS), especially in **Electric Vehicles (EV)** or **Energy Storage Systems (ESS)**. Its high voltage tolerance enables it to withstand the high voltage of the battery pack, while its **10A** drain current capability ensures that it can handle the high current charging and discharging process. The use of this MOSFET helps optimize the battery charging and discharging efficiency, improve the battery life and system stability.
4. **Inverters**
In **renewable energy systems** such as **photovoltaic inverters** and **wind inverters**, **SiHF8N50L-VB** can be used for power conversion. It has wide applications in medium and high power inverters by converting **DC** to **AC**. Its high **650V** drain-source voltage capability enables it to handle the output voltage of photovoltaic panels, while its stable switching performance ensures efficient conversion.
5. **UPS Systems (Uninterruptible Power Supplies, UPS)**
**SiHF8N50L-VB** is also suitable for **UPS systems** to provide **uninterruptible power supply** to critical loads. In UPS systems, this MOSFET is used for efficient power switching and power management, especially in high-demand scenarios such as **large servers**, **data centers** and **hospital equipment**. Its high current carrying capacity and high voltage withstand capability enable it to maintain stable operation during **battery charging and discharging** and **power switching**.
6. **High-Power Power Modules**
**SiHF8N50L-VB** can be used as a key power switch component in **high-power power modules**, especially in **converters**, **regulators** and **voltage regulators**. Due to its low on-resistance and high current capability, it can effectively reduce power loss and improve system efficiency. In **industrial power systems**, it provides stable and reliable power transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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