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SIHF5N50D-VB Product details
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SIHF5N50D-VB Product Introduction
**SIHF5N50D-VB** is an **N-channel MOSFET**, using **TO220F package**, it has **650V** drain-source voltage (VDS)** and **7A** drain current (ID)**, suitable for high voltage and medium power applications. Its on-resistance **RDS(on)** is **1100mΩ**, and when **VGS=10V**, it shows certain conduction loss and high current handling capability. It uses **Plannar technology**, which provides certain stability and withstand voltage characteristics, suitable for applications requiring 650V voltage capability and higher current.
As a high-voltage, high-power MOSFET, SIHF5N50D-VB performs well in various high-voltage applications, especially in power management, motor control, inverters and power conversion. Its **Vth (threshold voltage)** is **3.5V**, which gives it good gate drive characteristics.
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**SIHF5N50D-VB** is an **N-channel MOSFET**, using **TO220F package**, it has **650V** drain-source voltage (VDS)** and **7A** drain current (ID)**, suitable for high voltage and medium power applications. Its on-resistance **RDS(on)** is **1100mΩ**, and when **VGS=10V**, it shows certain conduction loss and high current handling capability. It uses **Plannar technology**, which provides certain stability and withstand voltage characteristics, suitable for applications requiring 650V voltage capability and higher current.
As a high-voltage, high-power MOSFET, SIHF5N50D-VB performs well in various high-voltage applications, especially in power management, motor control, inverters and power conversion. Its **Vth (threshold voltage)** is **3.5V**, which gives it good gate drive characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SIHF5N50D-VB Detailed parameter description
- **Package type: ** TO220F
- **Configuration: ** Single N channel
- **VDS (drain-source voltage): ** 650V – Can handle high voltage working environment, suitable for high voltage system.
- **VGS (gate-source voltage): ** ±30V – The maximum gate voltage supported is ±30V.
- **Vth (threshold voltage): ** 3.5V – Moderate range of startup voltage to ensure that the MOSFET can be effectively turned on at low gate voltage.
- **RDS(on) (on resistance): ** 1100mΩ @VGS=10V – The resistance value in the on state means that there is a certain conduction loss, and efficiency issues need to be paid attention to.
- **ID (drain current): ** 7A – The maximum drain current is 7A, suitable for medium power applications.
- **Technology:** Plannar – Manufactured using planar technology, providing relatively low conduction losses and high voltage withstand capability.
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- **Package type: ** TO220F
- **Configuration: ** Single N channel
- **VDS (drain-source voltage): ** 650V – Can handle high voltage working environment, suitable for high voltage system.
- **VGS (gate-source voltage): ** ±30V – The maximum gate voltage supported is ±30V.
- **Vth (threshold voltage): ** 3.5V – Moderate range of startup voltage to ensure that the MOSFET can be effectively turned on at low gate voltage.
- **RDS(on) (on resistance): ** 1100mΩ @VGS=10V – The resistance value in the on state means that there is a certain conduction loss, and efficiency issues need to be paid attention to.
- **ID (drain current): ** 7A – The maximum drain current is 7A, suitable for medium power applications.
- **Technology:** Plannar – Manufactured using planar technology, providing relatively low conduction losses and high voltage withstand capability.
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Domain and module applications：
Application fields and module examples
**SIHF5N50D-VB**'s high voltage resistance and certain current handling capabilities make it suitable for a variety of power electronics fields. The following are several typical application fields and modules:
1. **Switching power supply and power conversion:**
- SIHF5N50D-VB is suitable for various **switching power supply (SMPS)** applications, such as **AC-DC power converter**, **DC-DC converter**, **power adapter**, etc. Its 650V voltage resistance and 7A current handling capability enable it to work stably in power systems that require high voltage and medium current.
- In these applications, the **RDS(on)** of this MOSFET is 1100mΩ. Although the efficiency is slightly lower than that of low-resistance MOSFETs, it can still meet the needs of general power conversion scenarios.
2. **Inverters and Power Conditioning:**
- In **inverters** , especially high voltage applications such as **solar inverters** or **wind power inverters** , SIHF5N50D-VB provides stable power conversion to help convert direct current (DC) to alternating current (AC) to meet energy efficiency requirements.
- Due to its 650V drain-source voltage, it is well suited for power conversion in high voltage systems, especially in medium power applications.
3. **Motor Drive and Motor Control:**
- In **variable frequency drive (VFD)** and **motor control** systems, SIHF5N50D-VB can be used as an efficient switching element to control the starting, speed regulation and power regulation of the motor. Although the drain current of this MOSFET is low (7A), it is still suitable for low-power or medium-power motor drive systems.
- SIHF5N50D-VB can provide reliable current switching control in motor control for small power tools, electric fans, electric pumps and automation equipment.
4. **Battery Management System (BMS):**
- Current control and power management in **Battery Management System (BMS)** is another typical application. SIHF5N50D-VB can effectively control the current flow of the battery pack, provide overcharge, over-discharge protection and battery balancing functions.
- In electric vehicles (EV) and hybrid electric vehicles (HEV), MOSFETs can ensure the health and efficiency of the battery pack by switching the current in the battery management system.
5. **Automotive Electronics and High Power Switches:**
- In **Automotive Power Management Systems**, SIHF5N50D-VB can be used for switching control of high-voltage power lines. It can effectively manage battery charging and power regulation of motor drive systems.
- In the power systems of **electric vehicles (EVs)** and **hybrid electric vehicles (HEVs), especially in battery management, DC-DC converters and charging equipment, SIHF5N50D-VB can provide stable and reliable power switching.
6. **Power Amplifiers and High-Frequency Switches:**
- In **power amplifier** applications that require high voltage operation, SIHF5N50D-VB can be used as a key switching element in power amplifier circuits to increase the power output of the system.
- Also in some **high-frequency switching circuits**, MOSFET can be used as an effective switching controller, especially for electronic devices that require high voltage.
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**SIHF5N50D-VB**'s high voltage resistance and certain current handling capabilities make it suitable for a variety of power electronics fields. The following are several typical application fields and modules:
1. **Switching power supply and power conversion:**
- SIHF5N50D-VB is suitable for various **switching power supply (SMPS)** applications, such as **AC-DC power converter**, **DC-DC converter**, **power adapter**, etc. Its 650V voltage resistance and 7A current handling capability enable it to work stably in power systems that require high voltage and medium current.
- In these applications, the **RDS(on)** of this MOSFET is 1100mΩ. Although the efficiency is slightly lower than that of low-resistance MOSFETs, it can still meet the needs of general power conversion scenarios.
2. **Inverters and Power Conditioning:**
- In **inverters** , especially high voltage applications such as **solar inverters** or **wind power inverters** , SIHF5N50D-VB provides stable power conversion to help convert direct current (DC) to alternating current (AC) to meet energy efficiency requirements.
- Due to its 650V drain-source voltage, it is well suited for power conversion in high voltage systems, especially in medium power applications.
3. **Motor Drive and Motor Control:**
- In **variable frequency drive (VFD)** and **motor control** systems, SIHF5N50D-VB can be used as an efficient switching element to control the starting, speed regulation and power regulation of the motor. Although the drain current of this MOSFET is low (7A), it is still suitable for low-power or medium-power motor drive systems.
- SIHF5N50D-VB can provide reliable current switching control in motor control for small power tools, electric fans, electric pumps and automation equipment.
4. **Battery Management System (BMS):**
- Current control and power management in **Battery Management System (BMS)** is another typical application. SIHF5N50D-VB can effectively control the current flow of the battery pack, provide overcharge, over-discharge protection and battery balancing functions.
- In electric vehicles (EV) and hybrid electric vehicles (HEV), MOSFETs can ensure the health and efficiency of the battery pack by switching the current in the battery management system.
5. **Automotive Electronics and High Power Switches:**
- In **Automotive Power Management Systems**, SIHF5N50D-VB can be used for switching control of high-voltage power lines. It can effectively manage battery charging and power regulation of motor drive systems.
- In the power systems of **electric vehicles (EVs)** and **hybrid electric vehicles (HEVs), especially in battery management, DC-DC converters and charging equipment, SIHF5N50D-VB can provide stable and reliable power switching.
6. **Power Amplifiers and High-Frequency Switches:**
- In **power amplifier** applications that require high voltage operation, SIHF5N50D-VB can be used as a key switching element in power amplifier circuits to increase the power output of the system.
- Also in some **high-frequency switching circuits**, MOSFET can be used as an effective switching controller, especially for electronic devices that require high voltage.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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