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SIHF520S-VB Product details
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Product Introduction
**Model**: SIHF520S-VB
**Package**: TO263
**Configuration**: Single-N-Channel
**Maximum drain voltage (V_DS)**: 100V
**Gate-source voltage (V_GS)**: ±20V
**Threshold voltage (V_th)**: 1.8V
**On-resistance (R_DS(on))**: 100mΩ@V_GS=10V
**Maximum drain current (I_D)**: 20A
**Technology**: Trench technology
**Overview**: SIHF520S-VB is a high-efficiency N-channel MOSFET in TO263 package with a maximum drain voltage of 100V and a maximum drain current of 20A. It is suitable for medium voltage and high current switching applications. When V_GS=10V, the on-resistance of this MOSFET is 100mΩ, which has low power loss and is particularly suitable for power management, switching power supplies, DC-DC converters and other fields. SIHF520S-VB uses Trench technology, which helps to improve switching efficiency and reduce switching losses.
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**Model**: SIHF520S-VB
**Package**: TO263
**Configuration**: Single-N-Channel
**Maximum drain voltage (V_DS)**: 100V
**Gate-source voltage (V_GS)**: ±20V
**Threshold voltage (V_th)**: 1.8V
**On-resistance (R_DS(on))**: 100mΩ@V_GS=10V
**Maximum drain current (I_D)**: 20A
**Technology**: Trench technology
**Overview**: SIHF520S-VB is a high-efficiency N-channel MOSFET in TO263 package with a maximum drain voltage of 100V and a maximum drain current of 20A. It is suitable for medium voltage and high current switching applications. When V_GS=10V, the on-resistance of this MOSFET is 100mΩ, which has low power loss and is particularly suitable for power management, switching power supplies, DC-DC converters and other fields. SIHF520S-VB uses Trench technology, which helps to improve switching efficiency and reduce switching losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package type**: TO263
- The TO263 package is a surface mount package commonly used for power devices. It provides better heat dissipation performance, can handle higher power loads, and is suitable for applications with larger power. This package is often used in applications that require high power and high current, such as power management, inverters, motor drives, etc.
2. **Configuration**: Single-N-Channel
- As a single N-type MOSFET, SIHF520S-VB exhibits lower on-resistance and higher efficiency when turned on. N-type MOSFETs generally have better performance in switching speed and conduction performance, and are suitable for use as current switching elements.
3. **Maximum drain voltage (V_DS)**: 100V
- The maximum drain voltage of SIHF520S-VB is 100V, which can withstand higher voltages and is suitable for medium voltage power systems. It performs stably in higher voltage working environments and is suitable for use in DC-DC converters and medium voltage power management systems.
4. **Gate-Source Voltage (V_GS)**: ±20V
- This MOSFET supports a gate-source voltage of ±20V, which enables it to operate in a common drive voltage range with greater flexibility. The wide gate voltage range can accommodate a variety of drive signals to ensure reliable switching.
5. **Threshold Voltage (V_th)**: 1.8V
- The threshold voltage of this MOSFET is 1.8V, which means that when the gate-source voltage reaches 1.8V, the MOSFET will start to turn on. This lower threshold voltage makes it suitable for applications with lower drive voltages, ensuring stable operation even at lower gate-source voltages.
6. **On-resistance (R_DS(on))**: 100mΩ@V_GS=10V
- SIHF520S-VB has an on-resistance of 100mΩ at V_GS=10V, showing low conduction loss. Low on-resistance can significantly reduce the power loss of MOSFET during operation and improve energy efficiency, especially in high-current applications.
7. **Maximum drain current (I_D)**: 20A
- The maximum drain current is 20A, suitable for medium and high power loads. This current value enables SIHF520S-VB to handle larger current power conversion, meet more demanding current control requirements, and is widely used in various power-intensive devices.
8. **Technology**: Trench technology
- Using Trench technology, this technology enables MOSFET to have lower on-resistance and higher switching efficiency, thereby improving the overall performance of the device. Trench technology can significantly reduce power loss and increase switching speed, making it suitable for power management and power conversion systems that require high efficiency and high reliability.
---
1. **Package type**: TO263
- The TO263 package is a surface mount package commonly used for power devices. It provides better heat dissipation performance, can handle higher power loads, and is suitable for applications with larger power. This package is often used in applications that require high power and high current, such as power management, inverters, motor drives, etc.
2. **Configuration**: Single-N-Channel
- As a single N-type MOSFET, SIHF520S-VB exhibits lower on-resistance and higher efficiency when turned on. N-type MOSFETs generally have better performance in switching speed and conduction performance, and are suitable for use as current switching elements.
3. **Maximum drain voltage (V_DS)**: 100V
- The maximum drain voltage of SIHF520S-VB is 100V, which can withstand higher voltages and is suitable for medium voltage power systems. It performs stably in higher voltage working environments and is suitable for use in DC-DC converters and medium voltage power management systems.
4. **Gate-Source Voltage (V_GS)**: ±20V
- This MOSFET supports a gate-source voltage of ±20V, which enables it to operate in a common drive voltage range with greater flexibility. The wide gate voltage range can accommodate a variety of drive signals to ensure reliable switching.
5. **Threshold Voltage (V_th)**: 1.8V
- The threshold voltage of this MOSFET is 1.8V, which means that when the gate-source voltage reaches 1.8V, the MOSFET will start to turn on. This lower threshold voltage makes it suitable for applications with lower drive voltages, ensuring stable operation even at lower gate-source voltages.
6. **On-resistance (R_DS(on))**: 100mΩ@V_GS=10V
- SIHF520S-VB has an on-resistance of 100mΩ at V_GS=10V, showing low conduction loss. Low on-resistance can significantly reduce the power loss of MOSFET during operation and improve energy efficiency, especially in high-current applications.
7. **Maximum drain current (I_D)**: 20A
- The maximum drain current is 20A, suitable for medium and high power loads. This current value enables SIHF520S-VB to handle larger current power conversion, meet more demanding current control requirements, and is widely used in various power-intensive devices.
8. **Technology**: Trench technology
- Using Trench technology, this technology enables MOSFET to have lower on-resistance and higher switching efficiency, thereby improving the overall performance of the device. Trench technology can significantly reduce power loss and increase switching speed, making it suitable for power management and power conversion systems that require high efficiency and high reliability.
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Domain and module applications：
Applications and module examples
1. **Switching Mode Power Supply (SMPS)**
- SIHF520S-VB is widely used in switching mode power supplies (SMPS), especially for medium voltage power supply and high current power conversion. Its high current handling capability and low on-resistance make it an ideal choice for DC-DC converters, AC-DC adapters, step-up/step-down power supplies and other equipment.
2. **Motor Drive and Control System**
- In motor drive systems, especially for industrial automation, home appliances, vehicle drive and other fields, SIHF520S-VB can efficiently control large currents to drive the start and operation of motors. It can work stably in a higher voltage environment to ensure the smooth and efficient operation of the motor drive system.
3. **Battery Management System (BMS)**
- In the battery management system (BMS), SIHF520S-VB can effectively perform switch control of battery charging and discharging. It can handle large currents and provide low on-resistance to ensure the efficiency and safety of the battery management system.
4. **Power Conversion and Inverters**
- SIHF520S-VB is suitable for inverters and power conversion systems, especially in inverters that require high current handling, it can efficiently convert DC to AC. The MOSFET can withstand high voltages and handle large currents, making it ideal for high-power power conversion applications such as solar inverters and electric vehicle charging stations.
5. **Automotive Electronics**
- In automotive electronic systems, SIHF520S-VB can be used in modules such as on-board power management systems, electric vehicle drive control, car chargers, and DC-DC converters. Its high current carrying capacity and low on-resistance enable it to meet the high efficiency requirements of automotive electrical systems.
6. **Consumer Electronics**
- This MOSFET can also be used in some high-performance consumer electronic devices, such as TVs, audio systems, etc., especially in the power modules of these devices, SIHF520S-VB provides efficient power conversion and current control to ensure stable operation of the equipment.
7. **UPS (Uninterruptible Power Supply) System**
- SIHF520S-VB is also suitable for UPS (Uninterruptible Power Supply) system to provide stable power supply when power is interrupted. Its low on-resistance can effectively reduce power loss and ensure the efficient operation of UPS system.
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SIHF520S-VB is widely used in high power conversion fields such as switching power supply, inverter, motor drive system, battery management, automotive electronics, etc. with its maximum drain voltage of 100V, maximum drain current of 20A and low on-resistance of 100mΩ, and can meet various power management and power conversion applications with high efficiency and high current requirements.
1. **Switching Mode Power Supply (SMPS)**
- SIHF520S-VB is widely used in switching mode power supplies (SMPS), especially for medium voltage power supply and high current power conversion. Its high current handling capability and low on-resistance make it an ideal choice for DC-DC converters, AC-DC adapters, step-up/step-down power supplies and other equipment.
2. **Motor Drive and Control System**
- In motor drive systems, especially for industrial automation, home appliances, vehicle drive and other fields, SIHF520S-VB can efficiently control large currents to drive the start and operation of motors. It can work stably in a higher voltage environment to ensure the smooth and efficient operation of the motor drive system.
3. **Battery Management System (BMS)**
- In the battery management system (BMS), SIHF520S-VB can effectively perform switch control of battery charging and discharging. It can handle large currents and provide low on-resistance to ensure the efficiency and safety of the battery management system.
4. **Power Conversion and Inverters**
- SIHF520S-VB is suitable for inverters and power conversion systems, especially in inverters that require high current handling, it can efficiently convert DC to AC. The MOSFET can withstand high voltages and handle large currents, making it ideal for high-power power conversion applications such as solar inverters and electric vehicle charging stations.
5. **Automotive Electronics**
- In automotive electronic systems, SIHF520S-VB can be used in modules such as on-board power management systems, electric vehicle drive control, car chargers, and DC-DC converters. Its high current carrying capacity and low on-resistance enable it to meet the high efficiency requirements of automotive electrical systems.
6. **Consumer Electronics**
- This MOSFET can also be used in some high-performance consumer electronic devices, such as TVs, audio systems, etc., especially in the power modules of these devices, SIHF520S-VB provides efficient power conversion and current control to ensure stable operation of the equipment.
7. **UPS (Uninterruptible Power Supply) System**
- SIHF520S-VB is also suitable for UPS (Uninterruptible Power Supply) system to provide stable power supply when power is interrupted. Its low on-resistance can effectively reduce power loss and ensure the efficient operation of UPS system.
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SIHF520S-VB is widely used in high power conversion fields such as switching power supply, inverter, motor drive system, battery management, automotive electronics, etc. with its maximum drain voltage of 100V, maximum drain current of 20A and low on-resistance of 100mΩ, and can meet various power management and power conversion applications with high efficiency and high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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