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SIHF22N60E-E3-VB Product details

Product introduction:

SIHF22N60E-E3-VB Product Introduction

SIHF22N60E-E3-VB is a single N-type MOSFET in TO220F package, designed for medium and high voltage applications. The maximum drain-source voltage of this MOSFET is 650V, which is suitable for high-voltage power management, switching power supplies and various power conversion systems. Its on-resistance is 160mΩ, with relatively low conduction loss, and can carry a maximum current of 20A, which is suitable for high-current applications. SIHF22N60E-E3-VB adopts SJ_Multi-EPI technology, providing excellent switching performance and low switching losses, suitable for high-frequency, high-power and high-efficiency power conversion modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ@VGS=10V
- **Maximum leakage current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI (Super Junction Multi-EPI)
- **Maximum power dissipation (PD)**: 150W (typical)
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

Applications and module examples

The high voltage and medium to high power characteristics of SIHF22N60E-E3-VB make it suitable for multiple high-efficiency power management and power conversion fields. Here are some typical application areas:

1. **Switching Power Supply (SMPS) and Power Conversion**
SIHF22N60E-E3-VB has a withstand voltage of 650V, making it particularly suitable for applications such as switching power supplies (SMPS), DC-DC and AC-DC converters. This MOSFET is suitable for power management applications that require high voltage and high power. It can play a key role in the high-efficiency power conversion process, reduce switching losses and improve the overall efficiency of the system. Common applications include industrial power supplies, communication power supplies, and home appliance power supplies.

2. **Motor drive and control system**
Due to the good switching performance and high voltage resistance of this MOSFET, it is also widely used in motor drive and control systems. For example, in industrial machinery, power tools, fans, elevator systems and automation equipment, SIHF22N60E-E3-VB can provide stable switching performance to ensure efficient motor starting and operation.

3. **Inverter and solar power system**
SIHF22N60E-E3-VB is suitable for inverter systems, especially in solar inverters and power conversion systems. The high voltage capability enables it to withstand high-voltage loads in battery management systems and solar power generation systems, provide efficient power conversion, and has good temperature resistance to ensure long-term stable operation.

4. **High-voltage power conversion and transmission system**
SIHF22N60E-E3-VB is also widely used in switches and power modules in high-voltage power systems. Due to its high withstand voltage of 650V, it can effectively manage and convert high-voltage currents, and is suitable for power distribution, voltage stabilization modules and power regulation systems in high-voltage power systems.

5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the field of electric vehicles (EV) and hybrid electric vehicles (HEV), SIHF22N60E-E3-VB can be used for battery management, chargers and motor drive systems. This MOSFET can provide stable switching performance in a high voltage environment, ensuring safe charging and efficient discharge of the battery, while improving the performance of the power system.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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