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SiHF15N60E-GE3-VB Product details
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SiHF15N60E-GE3-VB Product Introduction
**SiHF15N60E-GE3-VB** is a high-voltage, high-power capacity **N-channel MOSFET**, using **TO220F package**, designed to withstand **650V drain-source voltage (VDS)**, suitable for high-voltage and high-current power electronics applications. This MOSFET has a maximum drain current (ID) of **20A** and has excellent performance and reliability in high-voltage working environments. Its **RDS(on) = 160mΩ** @VGS=10V, low on-resistance characteristics help reduce energy loss and improve overall system efficiency. Using **SJ_Multi-EPI technology**, the device has lower on-resistance and better thermal management in terms of performance, and can effectively cope with high current and high power working conditions.
The **3.5V threshold voltage (Vth)** of SiHF15N60E-GE3-VB enables it to operate at a lower gate voltage, providing higher switching efficiency. Its **TO220F package** enables it to have excellent thermal conductivity, suitable for high-power applications and able to cope with higher heat dissipation requirements.
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**SiHF15N60E-GE3-VB** is a high-voltage, high-power capacity **N-channel MOSFET**, using **TO220F package**, designed to withstand **650V drain-source voltage (VDS)**, suitable for high-voltage and high-current power electronics applications. This MOSFET has a maximum drain current (ID) of **20A** and has excellent performance and reliability in high-voltage working environments. Its **RDS(on) = 160mΩ** @VGS=10V, low on-resistance characteristics help reduce energy loss and improve overall system efficiency. Using **SJ_Multi-EPI technology**, the device has lower on-resistance and better thermal management in terms of performance, and can effectively cope with high current and high power working conditions.
The **3.5V threshold voltage (Vth)** of SiHF15N60E-GE3-VB enables it to operate at a lower gate voltage, providing higher switching efficiency. Its **TO220F package** enables it to have excellent thermal conductivity, suitable for high-power applications and able to cope with higher heat dissipation requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SiHF15N60E-GE3-VB Detailed parameter description
- **Package:** TO220F
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V – Supports high voltage operation and is suitable for high voltage applications.
- **VGS (gate-source voltage):** ±30V – The maximum gate-source voltage supported.
- **Vth (threshold voltage):** 3.5V – The MOSFET starts to turn on when the gate-source voltage reaches 3.5V.
- **RDS(on) (on-resistance):** 160mΩ @VGS=10V – The resistance between the drain and the source in the fully on state.
- **ID (drain current):** 20A – The maximum drain current that this MOSFET can withstand is 20A, which is suitable for high current applications.
- **Technology:** SJ_Multi-EPI – Using multi-layer EPI technology, it optimizes on-resistance and thermal management, and improves device performance.
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- **Package:** TO220F
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V – Supports high voltage operation and is suitable for high voltage applications.
- **VGS (gate-source voltage):** ±30V – The maximum gate-source voltage supported.
- **Vth (threshold voltage):** 3.5V – The MOSFET starts to turn on when the gate-source voltage reaches 3.5V.
- **RDS(on) (on-resistance):** 160mΩ @VGS=10V – The resistance between the drain and the source in the fully on state.
- **ID (drain current):** 20A – The maximum drain current that this MOSFET can withstand is 20A, which is suitable for high current applications.
- **Technology:** SJ_Multi-EPI – Using multi-layer EPI technology, it optimizes on-resistance and thermal management, and improves device performance.
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Domain and module applications：
Application fields and module examples
The excellent performance of the **SiHF15N60E-GE3-VB** MOSFET makes it widely used in multiple high-voltage and high-power application fields. The following are several typical application examples of this MOSFET:
1. **Switching power supply and power conversion:**
- SiHF15N60E-GE3-VB is suitable for various types of **switching power supplies (SMPS)** and **power adapters**. Under the requirements of high voltage conversion and high power output, the high voltage tolerance and low on-resistance of this MOSFET can significantly improve the efficiency and stability of the power system.
- Especially in high-power **AC-DC power supplies**, **DC-DC converters** and **DC power supplies**, this MOSFET can efficiently handle high-power loads, reduce power losses, and improve the overall efficiency of the system.
2. **Inverter Applications:**
- In power conversion applications such as **solar inverters**, **wind power inverters** and **uninterruptible power supply (UPS) systems**, SiHF15N60E-GE3-VB MOSFET can ensure stable and efficient conversion of DC to AC due to its 650V withstand voltage and up to 20A drain current.
- Due to its low on-resistance, it is particularly suitable for applications that require high-frequency switching and high-voltage operation, improving inverter efficiency and reducing energy loss.
3. **Motor Drive and Industrial Automation:**
- SiHF15N60E-GE3-VB is suitable for **motor drive systems**, such as **variable frequency drives (VFDs)**, **servo motor controls** and **motor speed regulators**. The role of MOSFET in these systems is to efficiently switch current and regulate the speed and torque of the motor.
- In the field of industrial automation, the high efficiency of MOSFET can ensure precise control, reduce energy waste, and improve the stability and response speed of motor control systems.
4. **High-efficiency battery management system (BMS): **
- In the **Battery Management System (BMS)**, the high voltage characteristics and low on-resistance of SiHF15N60E-GE3-VB make it very suitable for battery overcurrent protection and power management, ensuring that the battery pack is safely and efficiently managed during the charging and discharging process.
- This MOSFET can effectively handle current regulation in high-voltage battery systems to ensure long-term battery life.
5. **Automotive Electronics: **
- In the power electronic control systems of **Electric Vehicles (EV)** and **Hybrid Electric Vehicles (HEV)**, SiHF15N60E-GE3-VB can efficiently convert and manage energy to meet the strict requirements of automobiles for high voltage and high power.
- This MOSFET can also be used in **Electric Vehicle Charging Stations** to provide efficient charging management for batteries.
6. **Power protection and energy efficiency improvement: **
- SiHF15N60E-GE3-VB is also widely used in **power management** and **energy efficiency improvement** modules that require high-power switching and power protection. In these applications, the MOSFET can provide fast current switching and stable voltage output, helping to improve system reliability and efficiency.
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The excellent performance of the **SiHF15N60E-GE3-VB** MOSFET makes it widely used in multiple high-voltage and high-power application fields. The following are several typical application examples of this MOSFET:
1. **Switching power supply and power conversion:**
- SiHF15N60E-GE3-VB is suitable for various types of **switching power supplies (SMPS)** and **power adapters**. Under the requirements of high voltage conversion and high power output, the high voltage tolerance and low on-resistance of this MOSFET can significantly improve the efficiency and stability of the power system.
- Especially in high-power **AC-DC power supplies**, **DC-DC converters** and **DC power supplies**, this MOSFET can efficiently handle high-power loads, reduce power losses, and improve the overall efficiency of the system.
2. **Inverter Applications:**
- In power conversion applications such as **solar inverters**, **wind power inverters** and **uninterruptible power supply (UPS) systems**, SiHF15N60E-GE3-VB MOSFET can ensure stable and efficient conversion of DC to AC due to its 650V withstand voltage and up to 20A drain current.
- Due to its low on-resistance, it is particularly suitable for applications that require high-frequency switching and high-voltage operation, improving inverter efficiency and reducing energy loss.
3. **Motor Drive and Industrial Automation:**
- SiHF15N60E-GE3-VB is suitable for **motor drive systems**, such as **variable frequency drives (VFDs)**, **servo motor controls** and **motor speed regulators**. The role of MOSFET in these systems is to efficiently switch current and regulate the speed and torque of the motor.
- In the field of industrial automation, the high efficiency of MOSFET can ensure precise control, reduce energy waste, and improve the stability and response speed of motor control systems.
4. **High-efficiency battery management system (BMS): **
- In the **Battery Management System (BMS)**, the high voltage characteristics and low on-resistance of SiHF15N60E-GE3-VB make it very suitable for battery overcurrent protection and power management, ensuring that the battery pack is safely and efficiently managed during the charging and discharging process.
- This MOSFET can effectively handle current regulation in high-voltage battery systems to ensure long-term battery life.
5. **Automotive Electronics: **
- In the power electronic control systems of **Electric Vehicles (EV)** and **Hybrid Electric Vehicles (HEV)**, SiHF15N60E-GE3-VB can efficiently convert and manage energy to meet the strict requirements of automobiles for high voltage and high power.
- This MOSFET can also be used in **Electric Vehicle Charging Stations** to provide efficient charging management for batteries.
6. **Power protection and energy efficiency improvement: **
- SiHF15N60E-GE3-VB is also widely used in **power management** and **energy efficiency improvement** modules that require high-power switching and power protection. In these applications, the MOSFET can provide fast current switching and stable voltage output, helping to improve system reliability and efficiency.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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