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SiHF12N60E-GE3-VB Product details
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SiHF12N60E-GE3-VB Product Introduction
**SiHF12N60E-GE3-VB** is a high-performance **N-channel MOSFET** in a **TO220F** package for **high-voltage power and power conversion** applications. With a **maximum drain-source voltage (VDS)** of **650V**, this MOSFET can withstand higher voltages and is suitable for use in power electronic equipment, especially in **high-power power supplies** and **industrial control systems**. The device has a **maximum drain current (ID)** of **20A** and has a strong current carrying capacity, making it suitable for high-power drives and power management. Its **threshold voltage (Vth)** is **3.5V**, ensuring normal switching at lower gate-source voltages.
Using **Plannar technology**, SiHF12N60E-GE3-VB provides **320mΩ** of **on-resistance (RDS(ON))** at **VGS=10V**. Despite the high on-resistance, it still has excellent switching characteristics and is suitable for environments that require high voltage and high current tolerance. Its high voltage tolerance and large current handling capability make it an indispensable key device in **power converters, inverters and industrial electrical systems**.
**SiHF12N60E-GE3-VB** is a high-performance **N-channel MOSFET** in a **TO220F** package for **high-voltage power and power conversion** applications. With a **maximum drain-source voltage (VDS)** of **650V**, this MOSFET can withstand higher voltages and is suitable for use in power electronic equipment, especially in **high-power power supplies** and **industrial control systems**. The device has a **maximum drain current (ID)** of **20A** and has a strong current carrying capacity, making it suitable for high-power drives and power management. Its **threshold voltage (Vth)** is **3.5V**, ensuring normal switching at lower gate-source voltages.
Using **Plannar technology**, SiHF12N60E-GE3-VB provides **320mΩ** of **on-resistance (RDS(ON))** at **VGS=10V**. Despite the high on-resistance, it still has excellent switching characteristics and is suitable for environments that require high voltage and high current tolerance. Its high voltage tolerance and large current handling capability make it an indispensable key device in **power converters, inverters and industrial electrical systems**.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SiHF12N60E-GE3-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **320mΩ** @VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **320mΩ** @VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples
1. **Switching power supply (SMPS)**
**SiHF12N60E-GE3-VB** is widely used in **switching power supply (SMPS)**, especially in **high-voltage switching power supply design**. Its high withstand voltage performance of 650V makes it suitable for **power conversion modules** in power supplies, such as **AC-DC converters**, **DC-DC converters** and **inverters**. Although the on-resistance is 320mΩ, it is suitable for applications that do not require particularly strict switching performance. This MOSFET can improve the overall efficiency of the power system, especially in high-power applications.
2. **Power transmission and distribution**
In **power transmission and distribution** systems, SiHF12N60E-GE3-VB is suitable for **power electronic conversion equipment** and **high-voltage power control systems** due to its high withstand voltage capability (650V) and current capability (20A). It can play an important role in **high-voltage direct current (HVDC) transmission systems**, **inverters** and **grid power conditioning equipment**, ensuring efficient transmission and stable control of power.
3. **Industrial control systems**
**SiHF12N60E-GE3-VB** has key applications in **industrial automation control systems**. This MOSFET can be used in **motor drive control, inverters, and power conditioning modules**. Its strong current handling capability and high withstand voltage characteristics enable it to handle large amounts of power, work stably in complex industrial environments, and improve the efficiency and safety of automation equipment.
4. **Home appliance power modules**
This MOSFET can be used in **home appliances**, especially power management modules in **high-power home appliances**. Its high current carrying capacity makes it suitable for **air conditioners, electric water heaters**, **refrigerators** and other high-power home appliances, ensuring efficient power conversion and power distribution, and improving system reliability and efficiency.
5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the **Battery Management System (BMS)** and **Power Converter** of **EV** and **HEV**, SiHF12N60E-GE3-VB is very suitable for **Battery Charge and Discharge Management, Inverter and Motor Drive** Systems due to its **650V** High Voltage Withstand Capability and **20A** Current Carrying Capability. It can effectively improve the efficiency of the power system of electric vehicles, enhance the working performance of batteries and extend the service life.
6. **Solar Inverter**
Due to the **SiHF12N60E-GE3-VB**'s **High Voltage Withstand Capability, **It is particularly suitable for use in solar inverters**. In solar power generation systems, this MOSFET is used in **Power Conversion Modules** between solar panels and the grid. It can withstand high voltages, ensure effective power conversion between high voltage input and the grid, and improve the efficiency and stability of solar systems.
7. **Medical equipment**
In **medical equipment**, especially high-power equipment such as **X-ray machines**, **CT scanners** and **laser therapy systems**, SiHF12N60E-GE3-VB, as a key component in the power module, can withstand high voltages and provide efficient power control to ensure stable operation of the equipment.
1. **Switching power supply (SMPS)**
**SiHF12N60E-GE3-VB** is widely used in **switching power supply (SMPS)**, especially in **high-voltage switching power supply design**. Its high withstand voltage performance of 650V makes it suitable for **power conversion modules** in power supplies, such as **AC-DC converters**, **DC-DC converters** and **inverters**. Although the on-resistance is 320mΩ, it is suitable for applications that do not require particularly strict switching performance. This MOSFET can improve the overall efficiency of the power system, especially in high-power applications.
2. **Power transmission and distribution**
In **power transmission and distribution** systems, SiHF12N60E-GE3-VB is suitable for **power electronic conversion equipment** and **high-voltage power control systems** due to its high withstand voltage capability (650V) and current capability (20A). It can play an important role in **high-voltage direct current (HVDC) transmission systems**, **inverters** and **grid power conditioning equipment**, ensuring efficient transmission and stable control of power.
3. **Industrial control systems**
**SiHF12N60E-GE3-VB** has key applications in **industrial automation control systems**. This MOSFET can be used in **motor drive control, inverters, and power conditioning modules**. Its strong current handling capability and high withstand voltage characteristics enable it to handle large amounts of power, work stably in complex industrial environments, and improve the efficiency and safety of automation equipment.
4. **Home appliance power modules**
This MOSFET can be used in **home appliances**, especially power management modules in **high-power home appliances**. Its high current carrying capacity makes it suitable for **air conditioners, electric water heaters**, **refrigerators** and other high-power home appliances, ensuring efficient power conversion and power distribution, and improving system reliability and efficiency.
5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the **Battery Management System (BMS)** and **Power Converter** of **EV** and **HEV**, SiHF12N60E-GE3-VB is very suitable for **Battery Charge and Discharge Management, Inverter and Motor Drive** Systems due to its **650V** High Voltage Withstand Capability and **20A** Current Carrying Capability. It can effectively improve the efficiency of the power system of electric vehicles, enhance the working performance of batteries and extend the service life.
6. **Solar Inverter**
Due to the **SiHF12N60E-GE3-VB**'s **High Voltage Withstand Capability, **It is particularly suitable for use in solar inverters**. In solar power generation systems, this MOSFET is used in **Power Conversion Modules** between solar panels and the grid. It can withstand high voltages, ensure effective power conversion between high voltage input and the grid, and improve the efficiency and stability of solar systems.
7. **Medical equipment**
In **medical equipment**, especially high-power equipment such as **X-ray machines**, **CT scanners** and **laser therapy systems**, SiHF12N60E-GE3-VB, as a key component in the power module, can withstand high voltages and provide efficient power control to ensure stable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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