SiHF12N50C-E3-VB Product details
Product introduction:
SiHF12N50C-E3-VB is a single N-type MOSFET in TO220F package with a drain-source voltage (VDS) of 550V, suitable for high-voltage and medium-power power management and switching applications. The product has a maximum leakage current of 18A, has high voltage withstand characteristics, and uses planar technology (Plannar), which is suitable for applications requiring medium current and high voltage tolerance. The on-resistance of SiHF12N50C-E3-VB is 260mΩ, with low conduction loss. This MOSFET is widely used in switching power supplies, high-voltage motor drives, power conversion and power tools.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Drain-source voltage (VDS)**: 550V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ@VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology type**: Plannar (planar technology)
Domain and module applications:
SiHF12N50C-E3-VB's high withstand voltage and medium current carrying capacity make it very suitable for the following fields and application modules:
1. **Switching power supply and power conversion**
SiHF12N50C-E3-VB's 550V maximum drain-source voltage makes it suitable for high-voltage switching power supply applications. It can provide efficient switching control in power supply and power conversion systems, especially in AC-DC and DC-DC converters, which can effectively reduce switching losses and improve power conversion efficiency. It is widely used in industrial power supply, household appliance power supply and communication equipment power supply.
2. **Motor drive and control system**
Since SiHF12N50C-E3-VB can withstand high voltage, it is suitable for use in motor drive systems, especially high-voltage motor control modules. It can provide stable power supply and switching control in motor drives of power tools, fans, elevators and pumps, ensuring precise control of motor starting, speed regulation and reversal.
3. **Inverters and high-voltage power modules**
This MOSFET has a high drain-source voltage and is suitable for high-voltage inverters and power electronic modules. SiHF12N50C-E3-VB can efficiently switch current in applications such as solar inverters, AC motor drives, and HVAC (heating, ventilation and air conditioning systems), withstand the working pressure in high-voltage environments, and ensure the stability and reliability of the system.
4. **Automotive power management**
In the field of automotive electronics, SiHF12N50C-E3-VB can be used in battery management systems (BMS) and power conversion modules in electric vehicles (EV)/hybrid electric vehicles (HEV). It can withstand high voltages and is suitable for battery charging and discharging systems and motor drive systems, providing efficient current control and conversion.
5. **High-voltage power systems**
SiHF12N50C-E3-VB is also suitable for switches and power modules in high-voltage power systems. This MOSFET can be used for power conversion in power transmission, regulation systems and power distribution networks, especially in high voltage applications to stabilize current transmission and reduce losses.
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