SIHF10N40D-VB Product details
Product introduction:
**SIHF10N40D-VB** is a single N-channel MOSFET in TO220F package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 550V, it can withstand gate-source voltage (VGS) up to 30V, and has a high threshold voltage (Vth) of 3V. This model has an on-resistance (RDS(ON)) of 260mΩ and has moderate conduction losses at VGS = 10V, making it suitable for power management and control systems that do not have strict efficiency requirements but still require high voltage tolerance. SIHF10N40D-VB uses planar technology to ensure its stability and reliability in high voltage power supply systems, and is suitable for various medium and high voltage applications.
This product is suitable for switching power supplies, industrial control, home appliance power supply systems, etc., especially in applications that require high voltage tolerance and relatively low conduction losses.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: SIHF10N40D-VB
- **Package type**: TO220F
- **Configuration**: Single N-type channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to 150°C
- **Features**:
- Up to 550V drain-source voltage, suitable for high voltage switching power supplies
- Planar technology design, providing stable performance and reliability
- TO220F package, ensuring good heat dissipation
- Medium on-resistance, suitable for applications with more tolerant loss requirements
- Suitable for power switches, converters, industrial power supplies, etc.
---
Domain and module applications:
1. **High Voltage Power Management System**
Due to its maximum drain-source voltage of 550V, SIHF10N40D-VB is particularly suitable for high voltage power management systems. MOSFET can be used as a switching element in power conversion, rectification, filtering and other processes, providing efficient and reliable switching performance in high voltage applications, and is suitable for switching power supplies (SMPS), DC-DC converters and other equipment.
2. **Industrial Power Control**
In industrial power control, SIHF10N40D-VB can be used for motor control, industrial control power supply and welding machine power supply system. Its high voltage withstand capability and medium on-resistance enable it to work stably in high voltage and high current industrial applications, ensuring the safety and high efficiency of the equipment.
3. **Home Appliance Power Supply**
In home appliance power supply systems, SIHF10N40D-VB is suitable for medium and high voltage power control, such as the power conversion part in air conditioners, power tools, rice cookers and other equipment. This MOSFET can provide reliable power control for home appliances with relatively tolerant conduction losses while reducing overall energy consumption.
4. **Variable Frequency Drives (VFD)**
SIHF10N40D-VB can be used in variable frequency drives (VFD), especially in applications with high voltage and high current requirements, responsible for regulating motor speed and power output. With its high drain-source voltage and reliability, MOSFET ensures stable operation of the variable frequency drive system while accurately controlling the operating speed and torque of the motor.
5. **Battery Chargers**
In battery chargers, SIHF10N40D-VB can be used for the charging process of high voltage batteries, especially for lead-acid batteries or other high voltage battery packs. The high voltage carrying capacity of MOSFET ensures current control during the charging process to prevent equipment damage caused by overcharging or voltage fluctuations.
6. **Lighting Control Systems**
In high voltage lighting control systems, SIHF10N40D-VB can be used as a power switching element for switching and dimming control of lamps. The high voltage withstand capability of MOSFET enables it to withstand the switching of high voltage and current while providing reliable operation.
7. **Switching Power Supplies (SMPS)**
SIHF10N40D-VB is suitable for switching power supplies (SMPS), such as ATX power supplies, LED driver power supplies, etc. In these applications, MOSFETs can be used as key switching elements for voltage conversion, current regulation, and power stability control. Its maximum voltage capability of 550V makes it suitable for a wide range of high voltage applications.
---
**Summary**
SIHF10N40D-VB is a single N-type MOSFET for high voltage applications with a maximum drain-source voltage of 550V and a drain current carrying capacity of 18A. Its planar technology and TO220F package make it suitable for various types of high voltage switching power supplies, industrial power control, and home appliance power systems. Although its on-resistance is relatively high, it is still a very reliable and cost-effective solution for medium and high voltage applications that are not particularly sensitive to conduction losses.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image