SIHD7N60E-GE3-VB Product details
Product introduction:
**SIHD7N60E-GE3-VB** is a high-voltage N-Channel MOSFET with a TO252 package type, suitable for 650V high-voltage applications. This product is based on the advanced **SJ_Multi-EPI** (Super Junction Multi-EPI) technology, with high switching performance and efficient energy conversion capabilities. Its typical on-resistance is 700mΩ@VGS=10V and the maximum drain current (ID) is 7A, which is suitable for applications that require high voltage tolerance.
**SIHD7N60E-GE3-VB** features higher VDS (650V) and lower turn-on voltage (Vth = 3.5V), suitable for power control, motor drive and industrial applications. It excels in improving system energy efficiency and reducing switching losses, and can meet the stringent requirements of high current applications for stability and voltage tolerance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Description** |
|------------------------|--------------------------------------------------------------|
| **Model** | SIHD7N60E-GE3-VB |
| **Package type** | TO252 |
| **Configuration** | Single N-Channel |
| **VDS (drain-source voltage)** | 650V |
| **VGS (gate-source voltage)** | ±30V |
| **Vth (throw-on voltage)** | 3.5V |
| **RDS(ON) (on-resistance)** | 700mΩ@VGS=10V |
| **ID (drain current)** | 7A |
| **Technology** | SJ_Multi-EPI |
| **Maximum power dissipation** | Higher on-resistance value makes it suitable for medium-power applications, providing lower conduction losses|
| **Operating temperature range** | -55°C to 150°C |
| **Thermal resistance (package)** | 62.5°C/W |
Domain and module applications:
#### 1) **Switching Power Supply (SMPS)**
**SIHD7N60E-GE3-VB** is widely used in switching power supplies (SMPS), especially in high-power systems that require 650V withstand voltage. The switching power supply has very strict requirements on current control, and the MOSFET needs to provide fast switching response and efficient current conversion capabilities. The lower on-resistance (RDS(ON)) of this MOSFET helps to reduce energy loss, thereby improving the overall efficiency of the system, and is particularly suitable for power adapters, battery chargers, industrial power supplies, etc.
#### 2) **Motor Drive**
In motor drive systems, **SIHD7N60E-GE3-VB** can be used as a power switch component to regulate the power and speed of the motor. Motor drives usually require high withstand voltage and large current flow capabilities, and the 650V maximum drain-source voltage and high withstand voltage performance of this MOSFET make it an ideal choice for motor drive systems. It can effectively control the flow of current, reduce losses and improve the operating efficiency of the motor.
#### 3) **Inverter**
In solar, wind and other energy inverters, **SIHD7N60E-GE3-VB** can be used as a power switching element. The function of the inverter is to convert direct current (DC) into alternating current (AC), and MOSFET needs to withstand higher voltage and current. In this application, **SIHD7N60E-GE3-VB** as a high-voltage switch can provide low-loss and efficient energy conversion, ensuring the efficient operation of the inverter, especially suitable for solar inverters and industrial power inverters.
#### 4) **Power Electronics Applications**
In the field of power electronics, especially in power management systems, **SIHD7N60E-GE3-VB** is widely used in various power converters, UPS (uninterruptible power supply system) and battery management systems. Due to its high withstand voltage and low on-resistance, it can achieve efficient power conversion and reduce energy loss. In high voltage environments, this MOSFET can be used for efficient current control, improving the stability and efficiency of the power system.
#### 5) **Industrial Control Systems**
In industrial automation and control systems, **SIHD7N60E-GE3-VB** acts as a power switch component to efficiently manage power flow. It is widely used in motor control, variable frequency drives, and industrial power modules, especially in high voltage power systems and situations where large current management is required. Its high voltage resistance and high current handling capabilities can meet the high requirements of industrial equipment for power regulation accuracy and stability.
#### 6) **High Voltage Power Control and Protection**
In high voltage power control systems, **SIHD7N60E-GE3-VB** can be used for power conversion and voltage protection. The voltage resistance and high switching speed of this MOSFET make it suitable for use in high voltage control and power protection circuits. It can provide efficient current switching and protection functions, especially for high power electronic equipment, overload protection in power systems, and high voltage control modules.
### Summary:
**SIHD7N60E-GE3-VB** is a high-voltage, low-on-resistance N-Channel MOSFET with a drain-source voltage of 650V and a drain current carrying capacity of 7A. It uses SJ_Multi-EPI technology to provide efficient energy conversion capabilities. It is widely used in switching power supplies, motor drives, inverters, power electronic equipment, and industrial control systems, and can meet the application requirements of high voltage and high current. This MOSFET provides low-loss, high-efficiency current control in these fields, optimizes system performance, and improves energy efficiency.
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