SIHD6N65E-VB Product details
Product introduction:
**SIHD6N65E-VB** is a high voltage **unipolar N-Channel MOSFET** in **TO252** package, designed for power conversion and switching applications. It has a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of up to 9A, which is very suitable for high voltage and high current applications. This MOSFET is equipped with **SJ_Multi-EPI** technology, which is a multi-transistor technology that can effectively reduce on-resistance and switching losses and provide higher efficiency.
**SIHD6N65E-VB** has a threshold voltage (Vth) of 3.5V and a VGS of ±30V. Its on-resistance (RDS(ON)) is 500mΩ (at VGS=10V), which means that it exhibits a relatively high on-resistance under high current conditions and is suitable for applications with higher voltages. Due to its high voltage resistance, this MOSFET can be widely used in power electronics such as power conversion, inverters, and switching power supplies.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial)
Domain and module applications:
1. **High-Voltage Power Converters**
SIHD6N65E-VB is suitable for switching applications in high-voltage power converters, especially at the input and output of the converter. Its drain-source voltage of up to 650V enables it to handle high voltage inputs, such as industrial power supplies or power conversion for communication base stations. It is suitable for DC-DC, AC-DC converters, and other power conversion equipment.
2. **Inverters**
In inverter applications, SIHD6N65E-VB is able to efficiently handle high voltages and high currents. These inverters are widely used in solar systems, electric vehicles (EVs), uninterruptible power supplies (UPSs), etc. The high voltage tolerance and high efficiency of this MOSFET enable it to provide stable power output, especially in applications that require precise power conversion and low energy loss.
3. **Switching Power Supplies**
SIHD6N65E-VB is suitable for use as a switching element in high-power switching power supplies (SMPS), which can efficiently convert AC and DC voltages. Its low on-resistance (although high, it is very important for the ability to withstand 650V) and high-voltage resistance make it suitable for use as a high-current switch in power modules, ensuring power conversion efficiency and system stability.
4. **Power Supplies for Electric Tools**
This MOSFET can also play a role in power tools, especially in power tools that require high-voltage drive and fast switching. Through low energy consumption and high power management, SIHD6N65E-VB provides efficient and stable power conversion capabilities for power tools.
5. **Power Driver Systems**
In high-voltage power drive systems, such as motor drives or automation control systems, SIHD6N65E-VB can be used as a power switch. Its high voltage handling capability makes it suitable for motor control or high-power devices that require relatively high voltage and current.
6. **Industrial Automation**
This MOSFET can be widely used in power control, drive and energy management systems in industrial automation. Especially in industrial motor drives, robotic systems and power control modules, SIHD6N65E-VB provides reliable power conversion and efficient control.
7. **Home Appliances and Consumer Electronics**
In home appliances and consumer electronics, SIHD6N65E-VB can be used to provide high-voltage power conversion and control. Its high voltage carrying capability makes it suitable for use in power management systems for high-power home appliances (such as refrigerators and washing machines) and consumer electronic devices.
8. **Battery Chargers**
Due to its high voltage and high current capabilities, SIHD6N65E-VB performs well in battery chargers. It can effectively regulate the battery charging voltage and current, ensuring efficient charging and long battery life, especially in electric vehicle charging stations and large-capacity battery charging applications.
Technical support:
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