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SIHD6N62E-VB Product details
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Product Introduction
**Model**: SIHD6N62E-VB
**Package**: TO252
**Configuration**: Single N-Channel
**Maximum drain voltage (V_DS)**: 650V
**Gate-source voltage (V_GS)**: ±30V
**Threshold voltage (V_th)**: 3.5V
**On-resistance (R_DS(on))**: 700mΩ@V_GS=10V
**Maximum drain current (I_D)**: 7A
**Technology**: SJ_Multi-EPI technology
**Overview**: SIHD6N62E-VB is a high-voltage, low-on-resistance single N-type MOSFET packaged in TO252. It uses SJ_Multi-EPI technology and has a maximum drain voltage capability of 650V. The MOSFET has an on-resistance of 700mΩ at V_GS=10V and supports a maximum drain current of 7A. Its excellent performance makes it very suitable for high-voltage applications such as high-voltage power management, power conversion and switch mode power supply (SMPS). SJ_Multi-EPI technology improves the overall performance of the device and is suitable for high-reliability industrial applications, especially in environments requiring high switching speed and high efficiency.
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**Model**: SIHD6N62E-VB
**Package**: TO252
**Configuration**: Single N-Channel
**Maximum drain voltage (V_DS)**: 650V
**Gate-source voltage (V_GS)**: ±30V
**Threshold voltage (V_th)**: 3.5V
**On-resistance (R_DS(on))**: 700mΩ@V_GS=10V
**Maximum drain current (I_D)**: 7A
**Technology**: SJ_Multi-EPI technology
**Overview**: SIHD6N62E-VB is a high-voltage, low-on-resistance single N-type MOSFET packaged in TO252. It uses SJ_Multi-EPI technology and has a maximum drain voltage capability of 650V. The MOSFET has an on-resistance of 700mΩ at V_GS=10V and supports a maximum drain current of 7A. Its excellent performance makes it very suitable for high-voltage applications such as high-voltage power management, power conversion and switch mode power supply (SMPS). SJ_Multi-EPI technology improves the overall performance of the device and is suitable for high-reliability industrial applications, especially in environments requiring high switching speed and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package type**: TO252
- The TO252 package is suitable for medium-power MOSFET applications. This package has good heat dissipation capabilities and is suitable for use in high current and high power environments. Its structural design enables it to provide good thermal management in a limited space and is commonly used in industrial, consumer electronics and automotive electronics.
2. **Configuration**: Single-N-Channel
- This product is a single N-channel MOSFET. N-channel MOSFETs usually provide lower on-resistance and higher switching speeds, so they are widely used in power conversion, load control and other fields.
3. **Maximum drain voltage (V_DS)**: 650V
- SIHD6N62E-VB supports a maximum drain voltage of 650V and is suitable for high voltage applications such as high-voltage power management, inverters, switching power supplies, etc. Its high voltage withstand capability makes it suitable for heavy-duty work in power conversion and power management systems.
4. **Gate-source voltage (V_GS)**: ±30V
- Supports gate-source voltage of ±30V, which is suitable for most control circuits. It can provide a large gate drive voltage range, ensure stable switching of MOSFET, avoid gate overvoltage problems, and ensure its reliable operation in various power supply environments.
5. **Threshold voltage (V_th)**: 3.5V
- SIHD6N62E-VB has a higher threshold voltage (3.5V), which means it will turn on at a higher gate-source voltage. For high voltage environments, this feature can effectively avoid malfunction or unstable operation caused by too low gate voltage.
6. **On-resistance (R_DS(on))**:
- **R_DS(on)** @V_GS=10V: 700mΩ
- **On-resistance** is 700mΩ at V_GS=10V. The relatively high on-resistance makes the device suitable for low current applications or for use in medium and low power systems that require greater switching efficiency and power management.
7. **Maximum drain current (I_D)**: 7A
- The maximum drain current of SIHD6N62E-VB is 7A, which is suitable for medium current load applications. This current specification enables it to work stably in many high voltage systems, meeting the needs of many industrial equipment and consumer electronics.
8. **Technology**: SJ_Multi-EPI technology
- Adopts SJ_Multi-EPI technology, which helps optimize the electrical performance of MOSFET, especially on-resistance, breakdown voltage and thermal stability. It can improve switching efficiency, reduce losses, and provide stronger thermal stability, and is suitable for power systems that require high reliability and long life.
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1. **Package type**: TO252
- The TO252 package is suitable for medium-power MOSFET applications. This package has good heat dissipation capabilities and is suitable for use in high current and high power environments. Its structural design enables it to provide good thermal management in a limited space and is commonly used in industrial, consumer electronics and automotive electronics.
2. **Configuration**: Single-N-Channel
- This product is a single N-channel MOSFET. N-channel MOSFETs usually provide lower on-resistance and higher switching speeds, so they are widely used in power conversion, load control and other fields.
3. **Maximum drain voltage (V_DS)**: 650V
- SIHD6N62E-VB supports a maximum drain voltage of 650V and is suitable for high voltage applications such as high-voltage power management, inverters, switching power supplies, etc. Its high voltage withstand capability makes it suitable for heavy-duty work in power conversion and power management systems.
4. **Gate-source voltage (V_GS)**: ±30V
- Supports gate-source voltage of ±30V, which is suitable for most control circuits. It can provide a large gate drive voltage range, ensure stable switching of MOSFET, avoid gate overvoltage problems, and ensure its reliable operation in various power supply environments.
5. **Threshold voltage (V_th)**: 3.5V
- SIHD6N62E-VB has a higher threshold voltage (3.5V), which means it will turn on at a higher gate-source voltage. For high voltage environments, this feature can effectively avoid malfunction or unstable operation caused by too low gate voltage.
6. **On-resistance (R_DS(on))**:
- **R_DS(on)** @V_GS=10V: 700mΩ
- **On-resistance** is 700mΩ at V_GS=10V. The relatively high on-resistance makes the device suitable for low current applications or for use in medium and low power systems that require greater switching efficiency and power management.
7. **Maximum drain current (I_D)**: 7A
- The maximum drain current of SIHD6N62E-VB is 7A, which is suitable for medium current load applications. This current specification enables it to work stably in many high voltage systems, meeting the needs of many industrial equipment and consumer electronics.
8. **Technology**: SJ_Multi-EPI technology
- Adopts SJ_Multi-EPI technology, which helps optimize the electrical performance of MOSFET, especially on-resistance, breakdown voltage and thermal stability. It can improve switching efficiency, reduce losses, and provide stronger thermal stability, and is suitable for power systems that require high reliability and long life.
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Domain and module applications：
Applications and Module Examples
1. **Switching Mode Power Supply (SMPS)**:
- SIHD6N62E-VB is commonly used in switching mode power supplies (SMPS), especially those power modules that require high withstand voltage and high efficiency. During the power conversion process, this MOSFET can switch efficiently, reduce power loss, and improve system performance. It is very suitable for AC-DC power conversion, DC-DC converters, and inverters.
2. **Solar Inverter**:
- In solar photovoltaic power generation systems, SIHD6N62E-VB can be used as a switching element in solar inverters. Its high withstand voltage (650V) enables it to effectively cope with the high voltage environment in solar systems while maintaining low power consumption, helping to improve the conversion efficiency and reliability of solar systems.
3. **Industrial Power Conversion and Power Management**:
- Due to its 650V withstand voltage capability and 7A current carrying capacity, SIHD6N62E-VB performs well in industrial power conversion and power management applications. It can be widely used in variable frequency drives, motor control systems, and high-power power conversion devices, and is suitable for high-voltage control and load switching.
4. **Battery charging management**:
- In the battery charging management system, SIHD6N62E-VB can be used as a current switch and power regulator. Due to its high voltage resistance and low on-resistance, it can provide stable current control to ensure the charging efficiency and safety of the battery, especially in high voltage and high current environments, it can effectively reduce energy loss and increase charging speed.
5. **Electric vehicle (EV) power system**:
- The battery management system (BMS) and DC-DC converter in electric vehicles require efficient power switches. With its high voltage resistance of 650V and high current carrying capacity, SIHD6N62E-VB is suitable for the power management system in electric vehicles, ensuring the efficiency and stability of battery charging and discharging, while improving the overall energy conversion efficiency of electric vehicles.
6. **Uninterruptible Power System (UPS)**:
- In UPS systems, SIHD6N62E-VB is suitable for power conversion modules in medium and high power UPS systems. Its high voltage and high current handling capabilities can provide stable power supply and ensure the reliability of the system during power outages.
7. **Consumer Electronics High Voltage Applications**:
- In consumer electronic devices, such as high-power chargers and battery packs, SIHD6N62E-VB's 650V withstand voltage and low on-resistance make it an ideal choice. It can effectively manage the high voltage and current during battery charging to ensure the efficiency and safety of the equipment.
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With its high withstand voltage of 650V, low on-resistance and high current handling capability, SIHD6N62E-VB is very suitable for applications such as efficient power management, high-power switch-mode power supplies, solar inverters, and industrial power conversion. Its excellent performance and high reliability make it widely used in modern power electronic systems.
1. **Switching Mode Power Supply (SMPS)**:
- SIHD6N62E-VB is commonly used in switching mode power supplies (SMPS), especially those power modules that require high withstand voltage and high efficiency. During the power conversion process, this MOSFET can switch efficiently, reduce power loss, and improve system performance. It is very suitable for AC-DC power conversion, DC-DC converters, and inverters.
2. **Solar Inverter**:
- In solar photovoltaic power generation systems, SIHD6N62E-VB can be used as a switching element in solar inverters. Its high withstand voltage (650V) enables it to effectively cope with the high voltage environment in solar systems while maintaining low power consumption, helping to improve the conversion efficiency and reliability of solar systems.
3. **Industrial Power Conversion and Power Management**:
- Due to its 650V withstand voltage capability and 7A current carrying capacity, SIHD6N62E-VB performs well in industrial power conversion and power management applications. It can be widely used in variable frequency drives, motor control systems, and high-power power conversion devices, and is suitable for high-voltage control and load switching.
4. **Battery charging management**:
- In the battery charging management system, SIHD6N62E-VB can be used as a current switch and power regulator. Due to its high voltage resistance and low on-resistance, it can provide stable current control to ensure the charging efficiency and safety of the battery, especially in high voltage and high current environments, it can effectively reduce energy loss and increase charging speed.
5. **Electric vehicle (EV) power system**:
- The battery management system (BMS) and DC-DC converter in electric vehicles require efficient power switches. With its high voltage resistance of 650V and high current carrying capacity, SIHD6N62E-VB is suitable for the power management system in electric vehicles, ensuring the efficiency and stability of battery charging and discharging, while improving the overall energy conversion efficiency of electric vehicles.
6. **Uninterruptible Power System (UPS)**:
- In UPS systems, SIHD6N62E-VB is suitable for power conversion modules in medium and high power UPS systems. Its high voltage and high current handling capabilities can provide stable power supply and ensure the reliability of the system during power outages.
7. **Consumer Electronics High Voltage Applications**:
- In consumer electronic devices, such as high-power chargers and battery packs, SIHD6N62E-VB's 650V withstand voltage and low on-resistance make it an ideal choice. It can effectively manage the high voltage and current during battery charging to ensure the efficiency and safety of the equipment.
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With its high withstand voltage of 650V, low on-resistance and high current handling capability, SIHD6N62E-VB is very suitable for applications such as efficient power management, high-power switch-mode power supplies, solar inverters, and industrial power conversion. Its excellent performance and high reliability make it widely used in modern power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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