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SIHD3N50D-GE3-VB Product details
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1. Product Introduction
**SIHD3N50D-GE3-VB** is a **single N-channel MOSFET** in a **TO252 package**, designed for high voltage applications. The **drain-source voltage (V_DS)** of this model is **650V**, making it ideal for applications that need to withstand high voltage and high power. With a **high gate-source voltage (V_GS)**, up to **±30V**, this MOSFET is suitable for medium and low current load applications.
The **on-resistance (R_DS(on))** of this product is relatively high, **2750mΩ (at V_GS = 4.5V)** and **2200mΩ (at V_GS = 10V)**, but its high voltage withstand capability makes it particularly suitable for high voltage power management in **power conversion, load switching, motor control** and **home appliances**.
Using **Plannar technology**, this MOSFET provides good electrical performance and stable operating performance. Although its efficiency is slightly lower than that of Trench technology, it still has good adaptability in certain high-voltage applications.
**SIHD3N50D-GE3-VB** is a **single N-channel MOSFET** in a **TO252 package**, designed for high voltage applications. The **drain-source voltage (V_DS)** of this model is **650V**, making it ideal for applications that need to withstand high voltage and high power. With a **high gate-source voltage (V_GS)**, up to **±30V**, this MOSFET is suitable for medium and low current load applications.
The **on-resistance (R_DS(on))** of this product is relatively high, **2750mΩ (at V_GS = 4.5V)** and **2200mΩ (at V_GS = 10V)**, but its high voltage withstand capability makes it particularly suitable for high voltage power management in **power conversion, load switching, motor control** and **home appliances**.
Using **Plannar technology**, this MOSFET provides good electrical performance and stable operating performance. Although its efficiency is slightly lower than that of Trench technology, it still has good adaptability in certain high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model**: SIHD3N50D-GE3-VB
- **Package**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**:
- **@ V_GS = 4.5V**: 2750mΩ
- **@ V_GS = 10V**: 2200mΩ
- **Maximum leakage current (I_D)**: 4A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (P_D)**: 35W
- **Model**: SIHD3N50D-GE3-VB
- **Package**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**:
- **@ V_GS = 4.5V**: 2750mΩ
- **@ V_GS = 10V**: 2200mΩ
- **Maximum leakage current (I_D)**: 4A
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (P_D)**: 35W
Domain and module applications：
3. Application fields and module examples
**1. High voltage power conversion system**
- **Application scenario**: SIHD3N50D-GE3-VB can be used in **high voltage power adapters, AC-DC converters, DC-DC converters** and other power management systems, especially in situations where it needs to withstand a drain-source voltage of 650V.
- **Example**: In **industrial power supply, home appliance power adapter, LED driver power supply**, it is used as a switching element for power conversion and current management.
**2. Motor drive and load switch**
- **Application scenario**: This MOSFET can be used in **motor control** and **load switch** circuits, especially for loads that require high voltage control but do not require high current.
- **Example**: In **home appliances (such as air conditioners, washing machines, microwave ovens)** and **industrial equipment (such as automation control systems, power tools)** as a driving element to control the start and stop of motors and loads.
**3. Power Electronics and Energy Management**
- **Application Scenario**: Suitable for use in **power electronic equipment**, such as **battery management systems**, **inverters, battery chargers** and **uninterruptible power supply (UPS) systems**, which usually require switching control at high voltages.
- **Example**: In **solar inverters, battery charging management systems** and other fields, SIHD3N50D-GE3-VB can be used for switching control and power distribution.
**4. Battery Protection and Charging Management**
- **Application Scenario**: In **battery protection boards** or **battery management systems**, MOSFETs are used to protect batteries from adverse conditions such as overvoltage, overcurrent or overheating, ensuring long battery life and safe use.
- **Example**: In **electric vehicle (EV) battery management systems** and **consumer electronic devices (such as smartphones, laptops)**, this MOSFET is used for battery charge and discharge management.
**5. Industrial control and switching power supply**
- **Application scenario**: This MOSFET is also suitable for some **industrial control** systems, especially **relays, power switches, current limit** and other modules that require high voltage switching.
- **Example**: In **industrial electrical equipment**, SIHD3N50D-GE3-VB can be used for load switching, overload protection, and power control circuits to ensure efficient power transmission and safety.
**1. High voltage power conversion system**
- **Application scenario**: SIHD3N50D-GE3-VB can be used in **high voltage power adapters, AC-DC converters, DC-DC converters** and other power management systems, especially in situations where it needs to withstand a drain-source voltage of 650V.
- **Example**: In **industrial power supply, home appliance power adapter, LED driver power supply**, it is used as a switching element for power conversion and current management.
**2. Motor drive and load switch**
- **Application scenario**: This MOSFET can be used in **motor control** and **load switch** circuits, especially for loads that require high voltage control but do not require high current.
- **Example**: In **home appliances (such as air conditioners, washing machines, microwave ovens)** and **industrial equipment (such as automation control systems, power tools)** as a driving element to control the start and stop of motors and loads.
**3. Power Electronics and Energy Management**
- **Application Scenario**: Suitable for use in **power electronic equipment**, such as **battery management systems**, **inverters, battery chargers** and **uninterruptible power supply (UPS) systems**, which usually require switching control at high voltages.
- **Example**: In **solar inverters, battery charging management systems** and other fields, SIHD3N50D-GE3-VB can be used for switching control and power distribution.
**4. Battery Protection and Charging Management**
- **Application Scenario**: In **battery protection boards** or **battery management systems**, MOSFETs are used to protect batteries from adverse conditions such as overvoltage, overcurrent or overheating, ensuring long battery life and safe use.
- **Example**: In **electric vehicle (EV) battery management systems** and **consumer electronic devices (such as smartphones, laptops)**, this MOSFET is used for battery charge and discharge management.
**5. Industrial control and switching power supply**
- **Application scenario**: This MOSFET is also suitable for some **industrial control** systems, especially **relays, power switches, current limit** and other modules that require high voltage switching.
- **Example**: In **industrial electrical equipment**, SIHD3N50D-GE3-VB can be used for load switching, overload protection, and power control circuits to ensure efficient power transmission and safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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