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SIHB22N60E-E3-VB Product details
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**SIHB22N60E-E3-VB MOSFET Product Introduction**
SIHB22N60E-E3-VB is a high voltage, high current carrying capacity single N-channel MOSFET, packaged in TO263 type, suitable for medium and high voltage switching power supplies and power converters. Its maximum drain-source voltage (VDS) is 650V, the gate-source voltage (VGS) can withstand a voltage range of up to ±30V, and the gate threshold voltage (Vth) is 3.5V. This MOSFET is manufactured using advanced SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 160mΩ@VGS=10V), suitable for high-efficiency power conversion and high-frequency applications. Its maximum drain current (ID) is 20A, which supports higher load currents and is very suitable for use in high-power devices and industrial control systems. The high withstand voltage and high conduction performance of SIHB22N60E-E3-VB make it have a wide range of application potential in power management, motor drive, industrial equipment and consumer electronics.
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SIHB22N60E-E3-VB is a high voltage, high current carrying capacity single N-channel MOSFET, packaged in TO263 type, suitable for medium and high voltage switching power supplies and power converters. Its maximum drain-source voltage (VDS) is 650V, the gate-source voltage (VGS) can withstand a voltage range of up to ±30V, and the gate threshold voltage (Vth) is 3.5V. This MOSFET is manufactured using advanced SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 160mΩ@VGS=10V), suitable for high-efficiency power conversion and high-frequency applications. Its maximum drain current (ID) is 20A, which supports higher load currents and is very suitable for use in high-power devices and industrial control systems. The high withstand voltage and high conduction performance of SIHB22N60E-E3-VB make it have a wide range of application potential in power management, motor drive, industrial equipment and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**SIHB22N60E-E3-VB MOSFET detailed parameter description**
- **Model**: SIHB22N60E-E3-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Maximum power dissipation**: 100W
- **Technology**: SJ_Multi-EPI（Super Junction Multi-Epitaxial Process）
- **Input capacitance (Ciss)**: 210pF (typical)
- **Output capacitance (Coss)**: 50pF (typical)
- **Reverse transfer capacitance (Crss)**: 5pF (typical)
- **Switching characteristics**: Suitable for high frequency switching applications, fast response
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (RθJC)**: 1.5°C/W
- **Reverse recovery characteristics**: Optimize reverse recovery and reduce switching losses
- **Package type**: TO263
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- **Model**: SIHB22N60E-E3-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Maximum power dissipation**: 100W
- **Technology**: SJ_Multi-EPI（Super Junction Multi-Epitaxial Process）
- **Input capacitance (Ciss)**: 210pF (typical)
- **Output capacitance (Coss)**: 50pF (typical)
- **Reverse transfer capacitance (Crss)**: 5pF (typical)
- **Switching characteristics**: Suitable for high frequency switching applications, fast response
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (RθJC)**: 1.5°C/W
- **Reverse recovery characteristics**: Optimize reverse recovery and reduce switching losses
- **Package type**: TO263
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Domain and module applications：
**SIHB22N60E-E3-VB MOSFET application areas and module examples**
1. **Switching power supply and power management system**
SIHB22N60E-E3-VB MOSFET performs well in high-voltage switching power supplies, especially for DC-DC converters, AC-DC power modules and power adapters. Its high withstand voltage and low on-resistance characteristics enable it to efficiently convert power and effectively reduce switching losses and improve system efficiency.
2. **Motor drive and control**
This MOSFET is also very useful in motor drive systems, especially in high-power motor drives, fan controllers, and home appliance motor control. By using SIHB22N60E-E3-VB, efficient motor drive control can be performed at higher voltages to ensure system stability and energy efficiency.
3. **Industrial Power and Control Systems**
In industrial applications, SIHB22N60E-E3-VB MOSFET is widely used in power regulation, power conversion and industrial automation equipment. It can operate in high voltage environments and is suitable for power control systems, AC motor drives, robot control and other automation equipment.
4. **Power Electronics**
In power electronics, especially inverters, power tools, solar inverters and battery management systems (BMS), SIHB22N60E-E3-VB's high voltage tolerance makes it an ideal choice. It can achieve efficient power conversion in these applications, extend equipment life and improve energy efficiency.
5. **Automotive Electronics and Electric Vehicles (EV)**
SIHB22N60E-E3-VB is widely used in power management systems of electric vehicles (EV) and hybrid electric vehicles (HEV), especially in high-voltage battery management systems, electric drive systems and power control units. Its high voltage characteristics enable it to cope with the complex power conversion requirements in automobiles and ensure the stability of electric drive systems.
6. **Consumer Electronics**
SIHB22N60E-E3-VB can also be used as a switching element in high-power consumer electronic devices, especially in high-efficiency power adapters and battery chargers. Its high withstand voltage and low on-resistance enable it to effectively reduce energy loss and improve the overall efficiency of the system.
7. **Solar Inverter**
This MOSFET is also very suitable for renewable energy equipment such as solar photovoltaic inverters. It can withstand higher voltages and provide efficient power conversion. It is suitable for the process of converting DC to AC in solar power generation systems to improve energy utilization.
8. **LED Drive and Lighting System**
In LED driver and high-power lighting applications, SIHB22N60E-E3-VB MOSFET can provide stable current control to ensure efficient operation of LED lighting systems and extend service life.
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1. **Switching power supply and power management system**
SIHB22N60E-E3-VB MOSFET performs well in high-voltage switching power supplies, especially for DC-DC converters, AC-DC power modules and power adapters. Its high withstand voltage and low on-resistance characteristics enable it to efficiently convert power and effectively reduce switching losses and improve system efficiency.
2. **Motor drive and control**
This MOSFET is also very useful in motor drive systems, especially in high-power motor drives, fan controllers, and home appliance motor control. By using SIHB22N60E-E3-VB, efficient motor drive control can be performed at higher voltages to ensure system stability and energy efficiency.
3. **Industrial Power and Control Systems**
In industrial applications, SIHB22N60E-E3-VB MOSFET is widely used in power regulation, power conversion and industrial automation equipment. It can operate in high voltage environments and is suitable for power control systems, AC motor drives, robot control and other automation equipment.
4. **Power Electronics**
In power electronics, especially inverters, power tools, solar inverters and battery management systems (BMS), SIHB22N60E-E3-VB's high voltage tolerance makes it an ideal choice. It can achieve efficient power conversion in these applications, extend equipment life and improve energy efficiency.
5. **Automotive Electronics and Electric Vehicles (EV)**
SIHB22N60E-E3-VB is widely used in power management systems of electric vehicles (EV) and hybrid electric vehicles (HEV), especially in high-voltage battery management systems, electric drive systems and power control units. Its high voltage characteristics enable it to cope with the complex power conversion requirements in automobiles and ensure the stability of electric drive systems.
6. **Consumer Electronics**
SIHB22N60E-E3-VB can also be used as a switching element in high-power consumer electronic devices, especially in high-efficiency power adapters and battery chargers. Its high withstand voltage and low on-resistance enable it to effectively reduce energy loss and improve the overall efficiency of the system.
7. **Solar Inverter**
This MOSFET is also very suitable for renewable energy equipment such as solar photovoltaic inverters. It can withstand higher voltages and provide efficient power conversion. It is suitable for the process of converting DC to AC in solar power generation systems to improve energy utilization.
8. **LED Drive and Lighting System**
In LED driver and high-power lighting applications, SIHB22N60E-E3-VB MOSFET can provide stable current control to ensure efficient operation of LED lighting systems and extend service life.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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