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SIHB15N60E-VB Product details
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SIHB15N60E-VB Product Introduction
**SIHB15N60E-VB** is a high voltage N-channel MOSFET in a **TO263 package** with a **650V drain-source voltage (VDS)**, making it suitable for applications such as switching power supplies, inverters and power conversion with high voltage requirements. This MOSFET is configured as a single N-channel with a **15A maximum drain current (ID)**, which is very suitable for applications requiring high voltage and medium current capacity. By adopting **SJ_Multi-EPI technology**, this MOSFET has a lower on-resistance (RDS(on)=300mΩ@VGS=10V), which can effectively reduce power losses and improve system efficiency.
The **3.5V threshold voltage (Vth)** of this model MOSFET can ensure that it can achieve good switching performance at a lower gate-source voltage and adapt to voltage changes in various working environments.
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**SIHB15N60E-VB** is a high voltage N-channel MOSFET in a **TO263 package** with a **650V drain-source voltage (VDS)**, making it suitable for applications such as switching power supplies, inverters and power conversion with high voltage requirements. This MOSFET is configured as a single N-channel with a **15A maximum drain current (ID)**, which is very suitable for applications requiring high voltage and medium current capacity. By adopting **SJ_Multi-EPI technology**, this MOSFET has a lower on-resistance (RDS(on)=300mΩ@VGS=10V), which can effectively reduce power losses and improve system efficiency.
The **3.5V threshold voltage (Vth)** of this model MOSFET can ensure that it can achieve good switching performance at a lower gate-source voltage and adapt to voltage changes in various working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SIHB15N60E-VB Detailed parameter description
- **Package:** TO263
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V – This MOSFET can withstand a maximum drain-source voltage of 650V and is suitable for high voltage applications.
- **VGS (gate-source voltage):** ±30V – The maximum allowable voltage between the gate and the source.
- **Vth (threshold voltage):** 3.5V – The turn-on threshold voltage of this MOSFET is 3.5V, that is, when the gate-source voltage reaches this value, the MOSFET starts to turn on.
- **RDS(on) (on-resistance):**
- **300mΩ** At **VGS=10V** – The resistance between the drain and the source when the MOSFET is fully turned on. The lower the on-resistance, the lower the power loss.
- **ID(Drain Current):** 15A – At the maximum rated voltage, the maximum drain current that the MOSFET can withstand is 15A.
- **Technology:** SJ_Multi-EPI – Uses multi-layer EPI technology to reduce on-resistance and improve the overall efficiency and thermal management capabilities of the device.
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- **Package:** TO263
- **Configuration:** Single N-channel
- **VDS (drain-source voltage):** 650V – This MOSFET can withstand a maximum drain-source voltage of 650V and is suitable for high voltage applications.
- **VGS (gate-source voltage):** ±30V – The maximum allowable voltage between the gate and the source.
- **Vth (threshold voltage):** 3.5V – The turn-on threshold voltage of this MOSFET is 3.5V, that is, when the gate-source voltage reaches this value, the MOSFET starts to turn on.
- **RDS(on) (on-resistance):**
- **300mΩ** At **VGS=10V** – The resistance between the drain and the source when the MOSFET is fully turned on. The lower the on-resistance, the lower the power loss.
- **ID(Drain Current):** 15A – At the maximum rated voltage, the maximum drain current that the MOSFET can withstand is 15A.
- **Technology:** SJ_Multi-EPI – Uses multi-layer EPI technology to reduce on-resistance and improve the overall efficiency and thermal management capabilities of the device.
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Domain and module applications：
Applicable fields and module examples
**SIHB15N60E-VB** MOSFET has a wide range of application prospects in multiple industries and applications due to its excellent voltage tolerance, low on-resistance and high operating current capability. The following are examples of applicable fields and modules for this product:
1. **Power management applications:**
- In **switching power supplies (SMPS)**, **AC-DC power adapters** and **DC-DC converters**, SIHB15N60E-VB MOSFET can provide efficient power conversion. Especially in high-voltage conversion situations, the 650V drain-source voltage makes the device perform well in handling AC input and high-voltage DC output.
- As a switching device in the power module, this MOSFET can effectively reduce power loss and heat generation, and improve overall energy efficiency.
2. **Inverter applications:**
- In power conversion systems such as **solar inverters**, **wind inverters** and **uninterruptible power supply (UPS) systems**, SIHB15N60E-VB MOSFET can efficiently convert DC to AC and can withstand input voltages up to 650V. Especially in photovoltaic inverters, high voltage and high efficiency conversion are usually required, which is suitable for the use of such MOSFETs.
- In addition, in power electronic control systems for electric and hybrid vehicles, inverters are often used for motor drives, and the reliability and high voltage tolerance of MOSFETs make them an ideal choice.
3. **Industrial control systems:**
- In **motor drives**, **frequency converters** and **servo control systems**, SIHB15N60E-VB can regulate motor speed and torque by precisely controlling current and voltage. This makes it widely used in automation equipment, robotic systems and industrial production lines.
- Especially in situations where high voltage control and efficient switching are required, the performance of this MOSFET can significantly improve system efficiency and stability.
4. **Home appliances and consumer electronics:**
- In the power modules of home appliances such as **air conditioners**, **refrigerators** and **washing machines**, SIHB15N60E-VB MOSFET can be used for power conversion and motor control circuits to provide stable power output and help reduce energy loss.
- This MOSFET can also be used as a core component for power management in **power tools** and other electrical equipment.
5. **Automotive electronics:**
- In the power electronics systems of **automotive battery management systems (BMS)** and **electric vehicles (EV)** or **hybrid electric vehicles (HEV)**, SIHB15N60E-VB can provide precise voltage control, ensure efficient energy management, reduce battery loss and heat generation, and improve the endurance and energy efficiency of the entire vehicle.
- This MOSFET can also be used in **EV charging piles** and **EV motor drive systems**, meeting the automotive industry's demand for high voltage and high efficiency.
---
**SIHB15N60E-VB** MOSFET has a wide range of application prospects in multiple industries and applications due to its excellent voltage tolerance, low on-resistance and high operating current capability. The following are examples of applicable fields and modules for this product:
1. **Power management applications:**
- In **switching power supplies (SMPS)**, **AC-DC power adapters** and **DC-DC converters**, SIHB15N60E-VB MOSFET can provide efficient power conversion. Especially in high-voltage conversion situations, the 650V drain-source voltage makes the device perform well in handling AC input and high-voltage DC output.
- As a switching device in the power module, this MOSFET can effectively reduce power loss and heat generation, and improve overall energy efficiency.
2. **Inverter applications:**
- In power conversion systems such as **solar inverters**, **wind inverters** and **uninterruptible power supply (UPS) systems**, SIHB15N60E-VB MOSFET can efficiently convert DC to AC and can withstand input voltages up to 650V. Especially in photovoltaic inverters, high voltage and high efficiency conversion are usually required, which is suitable for the use of such MOSFETs.
- In addition, in power electronic control systems for electric and hybrid vehicles, inverters are often used for motor drives, and the reliability and high voltage tolerance of MOSFETs make them an ideal choice.
3. **Industrial control systems:**
- In **motor drives**, **frequency converters** and **servo control systems**, SIHB15N60E-VB can regulate motor speed and torque by precisely controlling current and voltage. This makes it widely used in automation equipment, robotic systems and industrial production lines.
- Especially in situations where high voltage control and efficient switching are required, the performance of this MOSFET can significantly improve system efficiency and stability.
4. **Home appliances and consumer electronics:**
- In the power modules of home appliances such as **air conditioners**, **refrigerators** and **washing machines**, SIHB15N60E-VB MOSFET can be used for power conversion and motor control circuits to provide stable power output and help reduce energy loss.
- This MOSFET can also be used as a core component for power management in **power tools** and other electrical equipment.
5. **Automotive electronics:**
- In the power electronics systems of **automotive battery management systems (BMS)** and **electric vehicles (EV)** or **hybrid electric vehicles (HEV)**, SIHB15N60E-VB can provide precise voltage control, ensure efficient energy management, reduce battery loss and heat generation, and improve the endurance and energy efficiency of the entire vehicle.
- This MOSFET can also be used in **EV charging piles** and **EV motor drive systems**, meeting the automotive industry's demand for high voltage and high efficiency.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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