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SIHB15N60E-GE3-VB Product details
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SIHB15N60E-GE3-VB Product Introduction
**SIHB15N60E-GE3-VB** is a **unipolar N-channel MOSFET** in a **TO263** package suitable for **high voltage applications**. Its **maximum drain-source voltage (VDS)** is **650V**, which can withstand higher voltages and is suitable for industrial-grade power supplies, switching power supplies, and electrical equipment that require high voltage resistance. This MOSFET uses **SJ_Multi-EPI technology** and has excellent switching performance and low on-resistance.
The **gate-source voltage (VGS)** of this device can reach **±30V**, supporting a wider gate drive voltage range. The **threshold voltage (Vth)** is **3.5V**, which ensures a lower switching voltage and further improves system efficiency. Its **on-resistance (RDS(ON))** is **300mΩ** @VGS=10V. Although there is some conduction loss under high current load, it has stable performance, especially suitable for high power applications. **Maximum drain current (ID)** is **15A**, providing sufficient current capacity to meet most industrial power supply needs.
**SIHB15N60E-GE3-VB** is a **unipolar N-channel MOSFET** in a **TO263** package suitable for **high voltage applications**. Its **maximum drain-source voltage (VDS)** is **650V**, which can withstand higher voltages and is suitable for industrial-grade power supplies, switching power supplies, and electrical equipment that require high voltage resistance. This MOSFET uses **SJ_Multi-EPI technology** and has excellent switching performance and low on-resistance.
The **gate-source voltage (VGS)** of this device can reach **±30V**, supporting a wider gate drive voltage range. The **threshold voltage (Vth)** is **3.5V**, which ensures a lower switching voltage and further improves system efficiency. Its **on-resistance (RDS(ON))** is **300mΩ** @VGS=10V. Although there is some conduction loss under high current load, it has stable performance, especially suitable for high power applications. **Maximum drain current (ID)** is **15A**, providing sufficient current capacity to meet most industrial power supply needs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SIHB15N60E-GE3-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **300mΩ** @VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **300mΩ** @VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples
1. **Switching power supply (SMPS)**
**SIHB15N60E-GE3-VB** can be widely used in **switching power supply** (SMPS), especially in high-voltage power conversion modules. It can withstand voltages up to 650V and is suitable for **AC-DC converters**, **DC-DC converters**, and **UPS (uninterruptible power supply)** systems. By reducing on-resistance and reducing switching losses, SIHB15N60E-GE3-VB can significantly improve the efficiency and stability of switching power supplies, especially in the design of high-power power supplies and industrial power supplies.
2. **Motor drive**
Due to its **650V high voltage withstand capability** and **15A high current handling capability**, this MOSFET performs well in **motor drive systems**. It can be used in **high-voltage motor controllers** and **servo motor drive systems**, especially in **industrial automation equipment** and **home appliances**, to achieve efficient motor control.
3. **Power transmission and distribution**
**SIHB15N60E-GE3-VB** is suitable for **power electronic conversion** in **power transmission and distribution**. It can work stably in high-voltage environments and is an ideal choice for **high-efficiency inverters** and **grid power control systems**. Due to its excellent switching performance and low conduction loss, it can improve the stability and efficiency of power systems, especially in **high-voltage direct current (HVDC) transmission** and **inverter modules**.
4. **Home appliances and consumer electronics**
In home appliances and consumer electronics, **SIHB15N60E-GE3-VB** can be used for **high-voltage switching power supplies** and **inverter power supplies**, such as **air conditioners**, **refrigerators** and **microwave ovens**. Its high withstand voltage and low conduction loss characteristics enable it to maintain efficient operation in applications with large current loads while ensuring the stability and safety of the equipment.
5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the **Battery Management System (BMS)** of **Electric Vehicles (EV)** and **HEV)**, SIHB15N60E-GE3-VB can effectively control the charging and discharging process of the battery. Its high voltage tolerance makes it very useful in **Battery Charging Modules** and **Power Converters**, which help improve the energy efficiency and system reliability of electric vehicles.
6. **Electrical Control Systems**
**SIHB15N60E-GE3-VB** is also widely used in **Industrial Electrical Control Systems**, especially in **High Voltage Power Supplies** and **Power Conditioning Modules**. Its high current carrying capacity and high voltage tolerance make it very suitable for power management in industrial equipment and machinery, ensuring the stable transmission and distribution of high power currents.
7. **Medical equipment**
**SIHB15N60E-GE3-VB** is also suitable for **medical equipment**, especially in power modules that require high voltage and high current, such as **CT scanners**, **X-ray machines**, and **laser therapy equipment**. Its high voltage tolerance can ensure the stability and safety of medical equipment in long-term operation.
1. **Switching power supply (SMPS)**
**SIHB15N60E-GE3-VB** can be widely used in **switching power supply** (SMPS), especially in high-voltage power conversion modules. It can withstand voltages up to 650V and is suitable for **AC-DC converters**, **DC-DC converters**, and **UPS (uninterruptible power supply)** systems. By reducing on-resistance and reducing switching losses, SIHB15N60E-GE3-VB can significantly improve the efficiency and stability of switching power supplies, especially in the design of high-power power supplies and industrial power supplies.
2. **Motor drive**
Due to its **650V high voltage withstand capability** and **15A high current handling capability**, this MOSFET performs well in **motor drive systems**. It can be used in **high-voltage motor controllers** and **servo motor drive systems**, especially in **industrial automation equipment** and **home appliances**, to achieve efficient motor control.
3. **Power transmission and distribution**
**SIHB15N60E-GE3-VB** is suitable for **power electronic conversion** in **power transmission and distribution**. It can work stably in high-voltage environments and is an ideal choice for **high-efficiency inverters** and **grid power control systems**. Due to its excellent switching performance and low conduction loss, it can improve the stability and efficiency of power systems, especially in **high-voltage direct current (HVDC) transmission** and **inverter modules**.
4. **Home appliances and consumer electronics**
In home appliances and consumer electronics, **SIHB15N60E-GE3-VB** can be used for **high-voltage switching power supplies** and **inverter power supplies**, such as **air conditioners**, **refrigerators** and **microwave ovens**. Its high withstand voltage and low conduction loss characteristics enable it to maintain efficient operation in applications with large current loads while ensuring the stability and safety of the equipment.
5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the **Battery Management System (BMS)** of **Electric Vehicles (EV)** and **HEV)**, SIHB15N60E-GE3-VB can effectively control the charging and discharging process of the battery. Its high voltage tolerance makes it very useful in **Battery Charging Modules** and **Power Converters**, which help improve the energy efficiency and system reliability of electric vehicles.
6. **Electrical Control Systems**
**SIHB15N60E-GE3-VB** is also widely used in **Industrial Electrical Control Systems**, especially in **High Voltage Power Supplies** and **Power Conditioning Modules**. Its high current carrying capacity and high voltage tolerance make it very suitable for power management in industrial equipment and machinery, ensuring the stable transmission and distribution of high power currents.
7. **Medical equipment**
**SIHB15N60E-GE3-VB** is also suitable for **medical equipment**, especially in power modules that require high voltage and high current, such as **CT scanners**, **X-ray machines**, and **laser therapy equipment**. Its high voltage tolerance can ensure the stability and safety of medical equipment in long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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