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SiHB12N60E-GE3-VB Product details
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SiHB12N60E-GE3-VB Product Introduction
The SiHB12N60E-GE3-VB is a unipolar N-type MOSFET in a TO263 package designed for high voltage, high power applications. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for power management and switching applications that require high voltage tolerance. The SiHB12N60E-GE3-VB has an on-resistance of 430mΩ, a high current carrying capacity (maximum leakage current 18A), and uses planar technology, making it suitable for use in high-efficiency, high-power circuits. This MOSFET is widely used in power conversion, industrial power supplies, inverters, and automotive power systems.
The SiHB12N60E-GE3-VB is a unipolar N-type MOSFET in a TO263 package designed for high voltage, high power applications. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for power management and switching applications that require high voltage tolerance. The SiHB12N60E-GE3-VB has an on-resistance of 430mΩ, a high current carrying capacity (maximum leakage current 18A), and uses planar technology, making it suitable for use in high-efficiency, high-power circuits. This MOSFET is widely used in power conversion, industrial power supplies, inverters, and automotive power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 18A | 430mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 430mΩ@VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology type**: Plannar (planar technology)
- **Package type**: TO263
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 430mΩ@VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology type**: Plannar (planar technology)
Domain and module applications：
Application fields and module examples
The high voltage and high current characteristics of SiHB12N60E-GE3-VB make it suitable for a variety of high-voltage and high-power applications. The following are some typical fields and modules for which this product is applicable:
1. **Power conversion and switching power supply**
SiHB12N60E-GE3-VB can be widely used in switching power supplies (SMPS) and power conversion systems, especially in situations where high voltage tolerance is required. Its 650V VDS can cope with high-voltage input applications, while the lower RDS(ON) value can ensure lower conduction losses and improve system efficiency. It is suitable for high-efficiency power conversion modules such as computer power supplies and home appliance power supplies.
2. **Industrial power supplies and inverters**
In industrial applications, SiHB12N60E-GE3-VB is suitable for high-voltage inverters and power management modules for power electronic equipment. Its high-voltage resistance enables it to withstand large currents and high voltage fluctuations, and is widely used in power management in motor drive systems, solar inverters, and industrial robots and automation equipment.
3. **Automotive power system**
In the field of automotive electronics, SiHB12N60E-GE3-VB can be used in electric vehicle charging systems, DC-DC converters, and battery management systems. It can support high-voltage working environments and is suitable for battery management and power conversion modules in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
4. **High-voltage motor drive and control**
Because SiHB12N60E-GE3-VB has good switching characteristics and high current carrying capacity, it is widely used in motor drive systems. Especially in high-voltage motor control systems, it can efficiently control the start and stop, speed regulation, and reversal of the motor, and is widely used in fans, elevator drives, pumps, and other industrial motor control fields.
5. **High-efficiency power tools and battery management systems**
Due to its low on-resistance, the SiHB12N60E-GE3-VB can provide efficient switching performance and is suitable for use in power tools and battery management systems (BMS). This MOSFET can effectively manage the battery charging and discharging process and improve battery efficiency, and is particularly suitable for small electric devices such as power tools and electric scooters.
The high voltage and high current characteristics of SiHB12N60E-GE3-VB make it suitable for a variety of high-voltage and high-power applications. The following are some typical fields and modules for which this product is applicable:
1. **Power conversion and switching power supply**
SiHB12N60E-GE3-VB can be widely used in switching power supplies (SMPS) and power conversion systems, especially in situations where high voltage tolerance is required. Its 650V VDS can cope with high-voltage input applications, while the lower RDS(ON) value can ensure lower conduction losses and improve system efficiency. It is suitable for high-efficiency power conversion modules such as computer power supplies and home appliance power supplies.
2. **Industrial power supplies and inverters**
In industrial applications, SiHB12N60E-GE3-VB is suitable for high-voltage inverters and power management modules for power electronic equipment. Its high-voltage resistance enables it to withstand large currents and high voltage fluctuations, and is widely used in power management in motor drive systems, solar inverters, and industrial robots and automation equipment.
3. **Automotive power system**
In the field of automotive electronics, SiHB12N60E-GE3-VB can be used in electric vehicle charging systems, DC-DC converters, and battery management systems. It can support high-voltage working environments and is suitable for battery management and power conversion modules in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
4. **High-voltage motor drive and control**
Because SiHB12N60E-GE3-VB has good switching characteristics and high current carrying capacity, it is widely used in motor drive systems. Especially in high-voltage motor control systems, it can efficiently control the start and stop, speed regulation, and reversal of the motor, and is widely used in fans, elevator drives, pumps, and other industrial motor control fields.
5. **High-efficiency power tools and battery management systems**
Due to its low on-resistance, the SiHB12N60E-GE3-VB can provide efficient switching performance and is suitable for use in power tools and battery management systems (BMS). This MOSFET can effectively manage the battery charging and discharging process and improve battery efficiency, and is particularly suitable for small electric devices such as power tools and electric scooters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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