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SIHA15N60E-VB Product details

Product introduction:

1. **Product Introduction (SIHA15N60E-VB)**

**SIHA15N60E-VB** is a high voltage N-Channel MOSFET in TO220 package type with 650V drain-source voltage (VDS) and 20A maximum drain current (ID). This product adopts advanced SJ_Multi-EPI (Super Junction Multi-EPI) technology, which is designed to provide excellent current carrying capacity, low on-resistance and high switching speed, making it particularly suitable for high-power and high-efficiency applications.

SIHA15N60E-VB has a gate-source voltage (VGS) of ±30V, a turn-on voltage (Vth) of 3.5V, and a high on-resistance (RDS(ON)) of 160mΩ@VGS=10V, which is suitable for various high-voltage applications, especially in power supply, switching power supply, inverter and other fields, and can achieve efficient energy conversion and control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. **Detailed parameter description**

| **Parameter** | **Description** |
|------------------------|----------------------------------------------------------|
| **Model** | SIHA15N60E-VB |
| **Package type** | TO220 |
| **Configuration** | Single N-Channel |
| **VDS (drain-source voltage)** | 650V |
| **VGS (gate-source voltage)** | ±30V |
| **Vth (turn-on voltage)** | 3.5V |
| **RDS(ON) (on-resistance)** | 160mΩ (VGS=10V) |
| **ID (drain current)** | 20A |
| **Technology** | SJ_Multi-EPI |
| **Maximum power consumption** | Provides efficient current carrying capability and reduces switching losses, suitable for high-power applications|
| **Operating temperature range** | -55°C to 150°C |
| **Thermal resistance (package)** | 62.5°C/W |

Domain and module applications:


### 3. **Application fields and module examples**

#### 1) **Switching Power Supply (SMPS)**
Due to its high withstand voltage and low on-resistance, **SIHA15N60E-VB** is an ideal choice in switching power supplies (SMPS). Switching power supplies usually require components to work stably at high voltage and high frequency, and MOSFET undertakes the task of fast switching and efficient energy conversion during the switching process. With its low RDS(ON) characteristics, this MOSFET can reduce switching losses and improve the overall efficiency of the power supply. Common applications include power adapters, computer power supplies, chargers, etc.

#### 2) **Inverter**
**SIHA15N60E-VB** also performs well in inverter applications, especially in solar inverters and industrial power inverters. Inverters convert DC power to AC power, requiring high-voltage, high-efficiency and low-loss switching elements. The high voltage carrying capacity (650V) of this MOSFET enables it to effectively control the power flow in the inverter, reduce system losses and improve efficiency.

#### 3) **Motor Drive and Inverter**
Motor drive systems, especially inverters, usually require components that can withstand high voltage and high current to accurately regulate the operating speed of the motor. **SIHA15N60E-VB** has a high rated voltage and low on-resistance, which gives it a great advantage in inverter applications. It can handle high power currents while ensuring efficient energy conversion, which helps to improve the operating efficiency and stability of the inverter.

#### 4) **Power Electronic Equipment**
**SIHA15N60E-VB** is widely used in various power electronic equipment such as power converters, UPS (uninterruptible power supply system), power conditioning systems, etc. In these devices, the switching performance of the MOSFET directly affects the efficiency and power loss of the system. With its 650V withstand voltage and high current handling capability, it is able to efficiently regulate the flow of current in these systems, thereby ensuring efficient and stable operation of the equipment.

#### 5) **Battery Management System**
In high-voltage battery management systems, MOSFETs are widely used in aspects such as charging and discharging control of battery packs. **SIHA15N60E-VB**'s high withstand voltage characteristics make it very suitable for switch control of high-voltage battery packs, especially in high-current environments that require frequent switching, it can provide low-loss and efficient current control.

#### 6) **High-voltage Power Supply Control**
In high-voltage power supply modules, **SIHA15N60E-VB**'s superior performance makes it an ideal choice. Its high withstand voltage capability and low on-resistance enable it to efficiently and stably control the flow of current in high-voltage power supply systems, especially for applications that require high-voltage stability, such as industrial power supplies and scientific research equipment.

### Summary:
**SIHA15N60E-VB** is an N-Channel MOSFET designed for high voltage applications, with a maximum drain-source voltage of 650V and a drain current carrying capacity of 20A. It uses SJ_Multi-EPI technology, has low on-resistance and high-efficiency switching characteristics, and is widely used in switching power supplies, inverters, motor drives, power electronics equipment, and battery management systems. Its excellent electrical performance makes it an ideal choice for efficient energy conversion and current control applications.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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