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SID55N03-VB Product details
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Product Introduction
**Model**: SID55N03-VB
**Package**: TO252
**Configuration**: Single-N-Channel
**Maximum Drain Voltage (V_DS)**: 30V
**Gate-Source Voltage (V_GS)**: ±20V
**Threshold Voltage (V_th)**: 1.7V
**On-Resistance (R_DS(on))**:
- 3mΩ@V_GS=4.5V
- 2mΩ@V_GS=10V
**Maximum Drain Current (I_D)**: 100A
**Technology**: Trench technology
**Overview**: SID55N03-VB is a high-performance single N-type MOSFET in TO252 package with a maximum drain voltage of 30V and a maximum drain current of 100A, suitable for high-efficiency power management and high-power switching applications. The device uses Trench technology and has a very low on-resistance (R_DS(on)) - only 2mΩ@V_GS=10V, which can greatly reduce power loss in the system and improve system efficiency. It is suitable for a variety of applications requiring high current and high efficiency, such as electric vehicles, power modules, battery management systems, etc.
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**Model**: SID55N03-VB
**Package**: TO252
**Configuration**: Single-N-Channel
**Maximum Drain Voltage (V_DS)**: 30V
**Gate-Source Voltage (V_GS)**: ±20V
**Threshold Voltage (V_th)**: 1.7V
**On-Resistance (R_DS(on))**:
- 3mΩ@V_GS=4.5V
- 2mΩ@V_GS=10V
**Maximum Drain Current (I_D)**: 100A
**Technology**: Trench technology
**Overview**: SID55N03-VB is a high-performance single N-type MOSFET in TO252 package with a maximum drain voltage of 30V and a maximum drain current of 100A, suitable for high-efficiency power management and high-power switching applications. The device uses Trench technology and has a very low on-resistance (R_DS(on)) - only 2mΩ@V_GS=10V, which can greatly reduce power loss in the system and improve system efficiency. It is suitable for a variety of applications requiring high current and high efficiency, such as electric vehicles, power modules, battery management systems, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
1. **Package type**: TO252
- TO252 package is a common power MOSFET package type, suitable for applications requiring higher power and heat dissipation capabilities. This package has good thermal performance and is suitable for high current working environments. TO252 package is commonly used in medium power electronic devices, providing efficient thermal management and current carrying capacity.
2. **Configuration**: Single N-channel (Single-N-Channel)
- SID55N03-VB is a single N-channel MOSFET, suitable for efficient current control. The N-channel design can provide lower on-resistance and higher switching speed, suitable for use in applications such as power management and load switching that require fast response and efficient current conduction.
3. **Maximum drain voltage (V_DS)**: 30V
- The maximum drain voltage is 30V, suitable for medium and low voltage power management systems. This voltage range makes the device suitable for common low-voltage power applications, including DC-DC converters, inverters, battery charge management, etc.
4. **Gate-source voltage (V_GS)**: ±20V
- The gate-source voltage range of SID55N03-VB is ±20V, which supports most standard control circuits, can withstand large gate drive voltages, and provide stable switching characteristics.
5. **Threshold voltage (V_th)**: 1.7V
- The threshold voltage of 1.7V means that the MOSFET can be turned on quickly at low voltage and adapt to lower gate drive voltages. This provides a good performance foundation for low power consumption and efficient switching circuits.
6. **On-resistance (R_DS(on)）**:
- **R_DS(on)** @V_GS=4.5V: 3mΩ
- **R_DS(on)** @V_GS=10V: 2mΩ
- Low on-resistance ensures that current flows with less power loss and improves overall efficiency. Especially in high current applications, low R_DS(on) can significantly reduce heat generation and improve system efficiency and reliability.
7. **Maximum drain current (I_D)**: 100A
- The SID55N03-VB supports a maximum drain current of 100A, suitable for high current load switching applications. This high current capability makes it an ideal choice for battery management, high power power modules and electric vehicles.
8. **Technology**: Trench technology
- Trench technology helps reduce on-resistance, increase switching speed, improve thermal management and enhance the overall performance of the MOSFET. This technology enables the SID55N03-VB to have excellent current conduction performance and low switching losses, suitable for high-efficiency power conversion and high-power switching applications.
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1. **Package type**: TO252
- TO252 package is a common power MOSFET package type, suitable for applications requiring higher power and heat dissipation capabilities. This package has good thermal performance and is suitable for high current working environments. TO252 package is commonly used in medium power electronic devices, providing efficient thermal management and current carrying capacity.
2. **Configuration**: Single N-channel (Single-N-Channel)
- SID55N03-VB is a single N-channel MOSFET, suitable for efficient current control. The N-channel design can provide lower on-resistance and higher switching speed, suitable for use in applications such as power management and load switching that require fast response and efficient current conduction.
3. **Maximum drain voltage (V_DS)**: 30V
- The maximum drain voltage is 30V, suitable for medium and low voltage power management systems. This voltage range makes the device suitable for common low-voltage power applications, including DC-DC converters, inverters, battery charge management, etc.
4. **Gate-source voltage (V_GS)**: ±20V
- The gate-source voltage range of SID55N03-VB is ±20V, which supports most standard control circuits, can withstand large gate drive voltages, and provide stable switching characteristics.
5. **Threshold voltage (V_th)**: 1.7V
- The threshold voltage of 1.7V means that the MOSFET can be turned on quickly at low voltage and adapt to lower gate drive voltages. This provides a good performance foundation for low power consumption and efficient switching circuits.
6. **On-resistance (R_DS(on)）**:
- **R_DS(on)** @V_GS=4.5V: 3mΩ
- **R_DS(on)** @V_GS=10V: 2mΩ
- Low on-resistance ensures that current flows with less power loss and improves overall efficiency. Especially in high current applications, low R_DS(on) can significantly reduce heat generation and improve system efficiency and reliability.
7. **Maximum drain current (I_D)**: 100A
- The SID55N03-VB supports a maximum drain current of 100A, suitable for high current load switching applications. This high current capability makes it an ideal choice for battery management, high power power modules and electric vehicles.
8. **Technology**: Trench technology
- Trench technology helps reduce on-resistance, increase switching speed, improve thermal management and enhance the overall performance of the MOSFET. This technology enables the SID55N03-VB to have excellent current conduction performance and low switching losses, suitable for high-efficiency power conversion and high-power switching applications.
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Domain and module applications：
Application fields and module examples
1. **Electric Vehicles (EV) and Battery Management Systems (BMS)**:
- In electric vehicles and battery management systems, SID55N03-VB is widely used for battery current control and charge and discharge management. Its high current carrying capacity (100A) and low on-resistance make it very suitable for high-power battery management systems, DC-DC converters, power electronic modules, etc. By reducing power loss, it can improve system efficiency and extend battery life.
2. **High-efficiency power modules and inverters**:
- The low R_DS(on) characteristics and high current capability of SID55N03-VB make it very suitable for use in high-efficiency power modules. It can be used in applications such as DC-AC inverters, power converters, and DC power systems. It can effectively reduce heat generation and power loss during high power conversion, improve system efficiency, and adapt to the needs of modern high-efficiency power technology.
3. **Server and Data Center Power Systems**:
- In the power supply systems of data centers and servers, SID55N03-VB can be used as a switching element in the power conversion circuit. Its efficient switching characteristics and high current carrying capacity can meet the requirements of modern server power systems for high efficiency and low power loss. Its high current capacity gives it excellent stability and reliability when handling high power loads.
4. **Industrial Automation and Robotics**:
- SID55N03-VB is very suitable for industrial automation systems and robot power management applications, especially in situations where high current and low power consumption are required. Its high current capability and efficient switching characteristics enable it to achieve precise load switching and current management in precision control systems and drive modules, ensuring efficient operation and long-term stability of the equipment.
5. **Battery-Powered Consumer Electronics Devices**:
- In consumer electronic devices such as portable electronics, wearable devices and mobile power supplies, SID55N03-VB can be applied to modules such as battery charging management, energy recovery and power switching. Its high current capability and low on-resistance enable it to improve the efficiency of these devices and extend battery life.
6. **Solar Inverter**:
- SID55N03-VB is suitable for power conversion modules in solar inverters. It can provide efficient switching performance during the DC to AC conversion process, reduce energy loss, and improve the overall efficiency of the solar system.
7. **Power Transmission and Distribution System**:
- In power transmission and distribution systems, SID55N03-VB can be used as a switching element to control current flow and power switching. Because it can withstand drain currents up to 100A and has low on-resistance, it can efficiently transmit power in the distribution system, reduce power losses, and improve system stability.
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SID55N03-VB is a single N-type MOSFET with ultra-low on-resistance and high current capability, which is very suitable for efficient power management, high-power load switching, and various applications requiring high current and high efficiency. Its excellent switching characteristics and high current carrying capacity give it broad application prospects in electric vehicles, industrial automation, solar energy systems, data center power modules and other fields.
1. **Electric Vehicles (EV) and Battery Management Systems (BMS)**:
- In electric vehicles and battery management systems, SID55N03-VB is widely used for battery current control and charge and discharge management. Its high current carrying capacity (100A) and low on-resistance make it very suitable for high-power battery management systems, DC-DC converters, power electronic modules, etc. By reducing power loss, it can improve system efficiency and extend battery life.
2. **High-efficiency power modules and inverters**:
- The low R_DS(on) characteristics and high current capability of SID55N03-VB make it very suitable for use in high-efficiency power modules. It can be used in applications such as DC-AC inverters, power converters, and DC power systems. It can effectively reduce heat generation and power loss during high power conversion, improve system efficiency, and adapt to the needs of modern high-efficiency power technology.
3. **Server and Data Center Power Systems**:
- In the power supply systems of data centers and servers, SID55N03-VB can be used as a switching element in the power conversion circuit. Its efficient switching characteristics and high current carrying capacity can meet the requirements of modern server power systems for high efficiency and low power loss. Its high current capacity gives it excellent stability and reliability when handling high power loads.
4. **Industrial Automation and Robotics**:
- SID55N03-VB is very suitable for industrial automation systems and robot power management applications, especially in situations where high current and low power consumption are required. Its high current capability and efficient switching characteristics enable it to achieve precise load switching and current management in precision control systems and drive modules, ensuring efficient operation and long-term stability of the equipment.
5. **Battery-Powered Consumer Electronics Devices**:
- In consumer electronic devices such as portable electronics, wearable devices and mobile power supplies, SID55N03-VB can be applied to modules such as battery charging management, energy recovery and power switching. Its high current capability and low on-resistance enable it to improve the efficiency of these devices and extend battery life.
6. **Solar Inverter**:
- SID55N03-VB is suitable for power conversion modules in solar inverters. It can provide efficient switching performance during the DC to AC conversion process, reduce energy loss, and improve the overall efficiency of the solar system.
7. **Power Transmission and Distribution System**:
- In power transmission and distribution systems, SID55N03-VB can be used as a switching element to control current flow and power switching. Because it can withstand drain currents up to 100A and has low on-resistance, it can efficiently transmit power in the distribution system, reduce power losses, and improve system stability.
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SID55N03-VB is a single N-type MOSFET with ultra-low on-resistance and high current capability, which is very suitable for efficient power management, high-power load switching, and various applications requiring high current and high efficiency. Its excellent switching characteristics and high current carrying capacity give it broad application prospects in electric vehicles, industrial automation, solar energy systems, data center power modules and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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