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SID05N10-VB Product details
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**SID05N10-VB MOSFET Product Introduction**
SID05N10-VB is a high-performance single N-channel MOSFET in TO251 package with good thermal stability and high performance. The maximum drain-source voltage (VDS) of this MOSFET is 100V, which is suitable for medium and high voltage power supply and switching applications. Its gate-source voltage (VGS) can withstand a voltage range of ±20V, and the gate threshold voltage (Vth) is 1.5V, ensuring efficient switching control at low voltage. The device has an on-resistance (RDS(ON)) of 200mΩ at VGS = 10V and a drain current (ID) of 12A, which is suitable for medium power switching applications. SID05N10-VB is manufactured using Trench technology, with low switching losses and excellent thermal performance, and is very suitable for a variety of applications such as power conversion, motor drive, LED drive, etc.
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SID05N10-VB is a high-performance single N-channel MOSFET in TO251 package with good thermal stability and high performance. The maximum drain-source voltage (VDS) of this MOSFET is 100V, which is suitable for medium and high voltage power supply and switching applications. Its gate-source voltage (VGS) can withstand a voltage range of ±20V, and the gate threshold voltage (Vth) is 1.5V, ensuring efficient switching control at low voltage. The device has an on-resistance (RDS(ON)) of 200mΩ at VGS = 10V and a drain current (ID) of 12A, which is suitable for medium power switching applications. SID05N10-VB is manufactured using Trench technology, with low switching losses and excellent thermal performance, and is very suitable for a variety of applications such as power conversion, motor drive, LED drive, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.5V | 12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
**SID05N10-VB MOSFET detailed parameter description**
- **Model**: SID05N10-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- 200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Trench
- **Input capacitance (Ciss)**: 850pF (typical)
- **Output capacitance (Coss)**: 30pF (typical)
- **Reverse transfer capacitance (Crss)**: 15pF (typical)
- **Switching characteristics**: Fast switching response, suitable for high frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 2W (typical, depends on cooling conditions)
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- **Model**: SID05N10-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- 200mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Trench
- **Input capacitance (Ciss)**: 850pF (typical)
- **Output capacitance (Coss)**: 30pF (typical)
- **Reverse transfer capacitance (Crss)**: 15pF (typical)
- **Switching characteristics**: Fast switching response, suitable for high frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 2W (typical, depends on cooling conditions)
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Domain and module applications：
**SID05N10-VB MOSFET application areas and module examples**
1. **Power management and switching power supply**
SID05N10-VB MOSFET is suitable for various power management and switching power supply applications. Its high voltage tolerance and low on-resistance make it very suitable for high-efficiency power systems such as DC-DC converters and power adapters. This MOSFET can effectively operate in power circuits with higher switching frequencies, reducing losses and improving efficiency.
2. **Motor drive**
In power tools, motor drives, and automotive electronic systems, SID05N10-VB can be used for motor drive applications. It can carry large currents at higher voltages, control the start and stop and speed regulation of motors, and provide efficient power conversion.
3. **LED drive circuit**
SID05N10-VB can be used in LED drive power modules, especially in applications requiring high-power LED lighting. Its low on-resistance and fast switching characteristics help improve driving efficiency and avoid power loss, while ensuring stable LED current output and extending the service life of the LED.
4. **Battery protection and management**
In the battery management system (BMS), SID05N10-VB can be used as a switching element for battery charging and discharging protection. Its application in medium and high voltage battery management, especially in power tools, consumer electronic devices and other fields, can effectively prevent overcurrent and overvoltage events.
5. **High frequency switching applications**
The fast switching response capability of SID05N10-VB makes it very suitable for high frequency switching applications. For example, in wireless communication equipment, RF power amplifiers and other electronic devices that require high efficiency and fast switching, SID05N10-VB can significantly improve system efficiency and reduce switching losses.
6. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
SID05N10-VB is suitable for power conversion systems in EVs and HEVs as a key component for battery management, power conversion, and motor control. Because it can withstand high voltages and high currents, it can operate efficiently in automotive electric drive systems and charging systems to optimize vehicle power performance.
7. **Portable Battery-Powered Devices**
SID05N10-VB can be widely used in portable battery-powered devices such as laptops, mobile power supplies, portable audio, etc. Its low on-resistance can effectively extend battery life while ensuring stable current output during high-efficiency conversion.
8. **Power Monitoring and Protection Module**
In power monitoring systems, SID05N10-VB can be used for power switches and overcurrent protection circuits. It can quickly respond to and protect against power fluctuations and overload events to ensure safe operation of the entire system.
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1. **Power management and switching power supply**
SID05N10-VB MOSFET is suitable for various power management and switching power supply applications. Its high voltage tolerance and low on-resistance make it very suitable for high-efficiency power systems such as DC-DC converters and power adapters. This MOSFET can effectively operate in power circuits with higher switching frequencies, reducing losses and improving efficiency.
2. **Motor drive**
In power tools, motor drives, and automotive electronic systems, SID05N10-VB can be used for motor drive applications. It can carry large currents at higher voltages, control the start and stop and speed regulation of motors, and provide efficient power conversion.
3. **LED drive circuit**
SID05N10-VB can be used in LED drive power modules, especially in applications requiring high-power LED lighting. Its low on-resistance and fast switching characteristics help improve driving efficiency and avoid power loss, while ensuring stable LED current output and extending the service life of the LED.
4. **Battery protection and management**
In the battery management system (BMS), SID05N10-VB can be used as a switching element for battery charging and discharging protection. Its application in medium and high voltage battery management, especially in power tools, consumer electronic devices and other fields, can effectively prevent overcurrent and overvoltage events.
5. **High frequency switching applications**
The fast switching response capability of SID05N10-VB makes it very suitable for high frequency switching applications. For example, in wireless communication equipment, RF power amplifiers and other electronic devices that require high efficiency and fast switching, SID05N10-VB can significantly improve system efficiency and reduce switching losses.
6. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
SID05N10-VB is suitable for power conversion systems in EVs and HEVs as a key component for battery management, power conversion, and motor control. Because it can withstand high voltages and high currents, it can operate efficiently in automotive electric drive systems and charging systems to optimize vehicle power performance.
7. **Portable Battery-Powered Devices**
SID05N10-VB can be widely used in portable battery-powered devices such as laptops, mobile power supplies, portable audio, etc. Its low on-resistance can effectively extend battery life while ensuring stable current output during high-efficiency conversion.
8. **Power Monitoring and Protection Module**
In power monitoring systems, SID05N10-VB can be used for power switches and overcurrent protection circuits. It can quickly respond to and protect against power fluctuations and overload events to ensure safe operation of the entire system.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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