Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 30V
- The maximum drain-source voltage of SiA910EDJ-T1-GE3-VB is 30V, which is suitable for switch control in low-voltage power supply systems.
- **VGS (gate-source voltage): ** ±20V
- The maximum gate-source voltage is ±20V, which can work stably in common power supply control systems.
- **Vth (threshold voltage): ** 1.7V
- The threshold voltage of this MOSFET is 1.7V, ensuring that it can be turned on smoothly when the gate voltage exceeds this value, which is suitable for low-voltage operating environments.
- **RDS(ON) (on-resistance):**
- 26mΩ@VGS=4.5V
- 22mΩ@VGS=10V
- At different gate voltages, the SiA910EDJ-T1-GE3-VB exhibits very low on-resistance, which means that energy loss can be significantly reduced and circuit efficiency can be improved during normal operation.
- **ID (drain current):** 5.8A
- The maximum drain current is 5.8A, which is suitable for current control at medium power levels and ensures stable current flow under multiple load conditions.
- **Technology:** Trench
- The use of trench technology optimizes the on-resistance and switching speed, which can effectively improve the efficiency and performance of the overall circuit.
Domain and module applications：
Application fields and module examples
1. **Power Management Systems:**
SiA910EDJ-T1-GE3-VB performs well in power management systems, especially in DC-DC converters, buck converters, and power supply voltage regulator modules. Due to its low on-resistance, it can significantly improve power efficiency, reduce losses, and help power management modules maintain high energy conversion efficiency.
2. **Load Switches:**
The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice for load switches. In circuits that require precise control of load power switches, SiA910EDJ-T1-GE3-VB can provide efficient switching control and is widely used in consumer electronics, home appliances and other fields.
3. **Battery Management Systems:**
In battery management systems, SiA910EDJ-T1-GE3-VB can provide precise current control and optimize the charging and discharging process, which is particularly suitable for applications such as portable electronic devices and power tools. Its low on-resistance helps reduce system energy loss and extend battery life.
4. **Power Regulation and Conversion:**
SiA910EDJ-T1-GE3-VB is particularly suitable for power regulation and conversion modules, especially in high-efficiency switching power supply systems. It can be used as a switching element in a switch mode power supply (SMPS), providing efficient power conversion while effectively suppressing electromagnetic interference (EMI).
5. **Motor Drive Control:**
This MOSFET can be used in electric motor drive control, especially in applications such as low-power power tools, household appliances and robotic systems. By precisely controlling the forward and reverse rotation and speed of electric motors, SiA910EDJ-T1-GE3-VB can effectively improve the performance of electric motors.
6. **Portable Devices:**
In portable devices, SiA910EDJ-T1-GE3-VB, as a core component of load switching and power management, can provide stable and efficient power switching. Its low on-resistance and high current carrying capacity are very suitable for battery management and power switching modules of devices such as smartphones, tablets, and Bluetooth headsets.
7. **LED Drivers:**
SiA910EDJ-T1-GE3-VB can be used in LED driver systems to control the power switch of LED lamps and ensure stable current supply under different current load conditions. Its low on-resistance can reduce energy loss in the drive circuit and help achieve efficient lighting control.
8. **Automotive Power Management:**
SiA910EDJ-T1-GE3-VB is also suitable for automotive power management systems, especially in auxiliary power systems, car navigation systems, and other low-voltage power modules in automobiles. Its high-efficiency switching characteristics ensure better energy efficiency and system stability in automotive battery management and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page-B.png)
