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SiA814DJ-T1-GE3-VB Product details

Product introduction:

Product Introduction

**SiA814DJ-T1-GE3** is a single-channel N-type MOSFET in DFN6 (2X2) package, designed for high-performance, miniaturized applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) range is ±20V, it has a low on-resistance (RDS(ON)), and uses Trench technology to optimize its current transfer characteristics. This MOSFET provides excellent current carrying capacity and power efficiency, and is suitable for high-density, high-performance applications such as power management, load switches, communication equipment and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-N 30V 1.7V 6A 23mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-N 30V 1.7V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-N 30V 1.7V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-N
Detailed parameter description

- **Model**: SiA814DJ-T1-GE3
- **Package**: DFN6(2X2)
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 4.5V
- 23mΩ @ VGS = 10V
- **Drain current (ID)**: 6A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench
- **Features**:
- Low on-resistance helps reduce power loss
- High current carrying capacity for medium and high power applications
- Small package design saves space for compact devices
- High efficiency and fast switching ensure stable system operation

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Domain and module applications:

Typical application areas and module examples

1. **Battery-Powered Devices**
SiA814DJ-T1-GE3 is suitable for portable battery-powered devices such as wireless devices, wearable devices and smart phones due to its low RDS(ON) characteristics and efficient power transmission. The low on-resistance of this MOSFET helps reduce the loss when the battery is discharged, thereby extending the battery life.

2. **Power Management Systems**
In power management modules, SiA814DJ-T1-GE3 can be used in DC-DC converters, power switches and voltage regulators, especially in situations where high efficiency and low power consumption are required. This MOSFET can effectively reduce power loss and is suitable for efficient power supply design, such as power adapters, chargers, UPS power supplies and other equipment.

3. **Load Switches**
As a load switch, SiA814DJ-T1-GE3 can control the switching of current paths and is widely used in various consumer electronic products. For example, it can be seen in switch control, smart sockets, LED lighting control and automation equipment in smart home devices. Due to its low RDS(ON) and small package, it is particularly suitable for designs with limited space.

4. **Communication Devices**
SiA814DJ-T1-GE3 has significant advantages in communication devices, especially wireless communication devices and network devices. Its low on-resistance and small package reduce energy loss during high-speed signal transmission, and is suitable for power and signal switches in fields such as routers, wireless access points, and base station equipment.

5. **Small Motor Drivers**
In small motor drive applications, SiA814DJ-T1-GE3 can be used as a switching component in motor drivers. Low on-resistance helps improve motor efficiency and reduce heat loss, and is suitable for modules such as micro motor drives and fan control in power tools and home appliances.

6. **Efficient Power Conversion**
Suitable for efficient power conversion applications such as electric vehicle (EV) charging stations, solar inverters, power tools, etc. In these applications, SiA814DJ-T1-GE3 can be used as a switching element to help improve power conversion efficiency and reduce energy waste.

7. **Automotive Electronics**
SiA814DJ-T1-GE3 is also widely used in automotive electronics, especially in modules that require efficient power management. For example, in vehicle battery management systems, vehicle chargers, and electric vehicle drive systems, SiA814DJ-T1-GE3 can effectively improve energy efficiency, reduce energy loss, and ensure stable operation of automotive electronic equipment.

8. **Smart Home Devices**
In smart homes, SiA814DJ-T1-GE3 can be used in modules such as smart sockets and smart lighting control systems. In these applications, MOSFETs can efficiently switch currents, achieve efficient energy management, reduce the total power consumption of the system, and ensure long-term stable operation of smart home devices.

9. **Computers & Networking Equipment**
This MOSFET also performs well in power management systems in computers and networking equipment. In power conversion modules such as server power supplies, computer power modules, network switches, and routers, SiA814DJ-T1-GE3 can optimize power management, reduce power loss, and improve the energy efficiency of the entire device.

10. **Consumer Electronics**
SiA814DJ-T1-GE3 is also suitable for a wide range of consumer electronics, especially those devices that require high power efficiency and space saving. It can be used in a variety of electronic devices, such as tablets, smart watches, mobile charging devices, etc.

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**Summary**
SiA814DJ-T1-GE3 is a high-performance, low-power, small N-type MOSFET. With its low on-resistance, high current carrying capacity and small package design, it is very suitable for battery-powered devices, power management systems, load switches, communication equipment and other fields. Whether in consumer electronics, smart homes, automotive electronics or high-efficiency power conversion applications, SiA814DJ-T1-GE3 can provide excellent current control capabilities and power efficiency to help optimize system performance and extend equipment life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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