Product introduction:
Product Introduction - SiA533EDJ-T1-GE3-VB
**SiA533EDJ-T1-GE3-VB** is a dual-channel (Dual-N+P-Channel) MOSFET that uses a compact **DFN6(2x2)-B** package and adopts high-efficiency Trench technology for applications that require low-voltage, high-efficiency switching. The device has a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V, which can provide stable performance. Its **on-resistance (RDS(ON))** is 24mΩ (N-Channel) and 40mΩ (P-Channel) at VGS=4.5V, and RDS(ON) is 18mΩ (N-Channel) and 32mΩ (P-Channel) at VGS=10V. Its maximum drain current (ID) is ±7A, making it ideal for a variety of power management, battery-powered, and load switch control applications. The SiA533EDJ-T1-GE3-VB provides a low-power, high-efficiency solution for system design through its low on-resistance and small package size, especially for systems that require bipolar control.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
|
18/32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN6(2x2)-B
- **Configuration**: Dual-channel N+P type MOSFET
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-Channel: 1.6V
- P-Channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- P-Channel:
- 40mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: ±7A
- **Technology**: Trench
Domain and module applications:
Application fields and module examples
1. **Battery-Powered Systems**
SiA533EDJ-T1-GE3-VB provides an ideal solution for applications in battery-powered devices, especially in power management systems that require bipolar control. Its low on-resistance and high-efficiency switching characteristics make it suitable for applications such as portable devices, consumer electronics, wireless devices, etc., while reducing power consumption and ensuring efficient use of batteries.
2. **DC-DC Converters**
In DC-DC converter applications, SiA533EDJ-T1-GE3-VB can be used for boost or buck converters. Especially in systems with multiple voltage rails, due to its bipolar configuration (N+P type channel), this MOSFET can effectively control the input power supply and output voltage, and provide efficient power conversion under low current or high current conditions. This MOSFET is suitable for communication equipment, servers and other systems that require efficient power management.
3. **Load Switch Control**
SiA533EDJ-T1-GE3-VB is very effective in load switch control, especially in power management applications that require load switching. With its low RDS(ON) value, it can reliably switch loads under low power loss conditions. It is widely used in computer power supplies, LED drivers, intelligent power switch control systems and other fields.
4. **Power Tools and Smart Home Devices**
In power tools and smart home devices, the high-efficiency switching characteristics and dual-channel design of SiA533EDJ-T1-GE3-VB make it an ideal choice for power management and load control. Its high current carrying capacity and low on-resistance can provide long-lasting and stable power support in battery-powered systems of power tools and smart devices, ensuring efficient and low-temperature operation of the system.
5. **Automotive Electronics**
SiA533EDJ-T1-GE3-VB is also very suitable for automotive electronic applications, such as vehicle power management systems, LED lighting and intelligent control systems. In automotive systems, MOSFETs need to have high voltage resistance and low on-resistance to achieve efficient power control and operate stably under harsh environmental conditions. SiA533EDJ-T1-GE3-VB can provide reliable power switching in modules such as battery management and battery-powered systems.
6. **Consumer Electronics**
SiA533EDJ-T1-GE3-VB is suitable for power management systems of various consumer electronic products, especially those that require efficient battery use and low power loss. Such products include smartphones, tablets, wearable devices, etc. Due to its efficient bipolar switch control, it can effectively manage the battery charging and discharging process, improve battery efficiency and extend the working time of the device.
7. **Communication Equipment**
In wireless communication equipment and network equipment, SiA533EDJ-T1-GE3-VB can be used for power conversion and current control to help achieve low-power and stable power management. This MOSFET can provide high-efficiency switching functions under low voltage conditions and is widely used in power modules of switches, routers, base stations and other equipment.
8. **LED Drivers**
The dual-channel design of SiA533EDJ-T1-GE3-VB is also very suitable for LED driver circuits, which can efficiently control current and stably drive LEDs. Its low on-resistance can reduce power loss in the driver power supply and improve the energy efficiency of the system. It is widely used in lighting power supplies, intelligent lighting control systems and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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