Product introduction：
1. Product Introduction
**SiA517DJ-T1-GE3-VB** is a **dual N+P channel MOSFET** in **DFN6(2x2)-B** package, suitable for electronic applications requiring low power consumption and high efficiency. This product supports **drain-source voltage (V_DS)** of **±30V** and has **±7A** maximum drain current. Through **Trench technology**, SiA517DJ-T1-GE3-VB provides excellent **on-resistance (R_DS(on))** of **24mΩ (N channel)** and **40mΩ (P channel)** @ **V_GS = 4.5V**, respectively, and **18mΩ (N channel)** and **32mΩ (P channel)** at higher gate-source voltage (**V_GS = 10V**). This MOSFET is ideal for high-efficiency power management systems, switching power supplies, and other circuits that require fast switching.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
|
18/32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: SiA517DJ-T1-GE3-VB
- **Package**: DFN6(2x2)-B
- **Configuration**: Dual N+P channel MOSFET
- **Drain-source voltage (V_DS)**: ±30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- **N channel**: 1.6V
- **P channel**: -1.7V
- **On-resistance (R_DS(on))**:
- **N channel**:
- 24mΩ @ **V_GS = 4.5V**
- 18mΩ @ **V_GS = 10V**
- **P channel**:
- 40mΩ @ **V_GS = 4.5V
- 32mΩ @ V_GS = 10V
- Maximum drain current (I_D): ±7A
- Technology: Trench technology
- Power consumption: Low on-resistance, suitable for high-efficiency power systems
Domain and module applications：
3. Application fields and module examples
**1. Battery Management System (BMS) **
- **Application scenario**: SiA517DJ-T1-GE3-VB can be used as a battery switch and protection device in the battery management system, providing current switching and overcurrent protection to ensure safe operation of the battery.
- **Example**: In the battery management system of power tools, rechargeable battery packs, and electric vehicles, MOSFETs are used to implement battery overcurrent protection, charge and discharge control, and load management.
**2. DC-DC Converter **
- **Application scenario**: This MOSFET can be used in power conversion modules, especially as a **high-efficiency switching element**, providing precise power conversion and voltage regulation in **Buck** or **Boost converter**.
- **Example**: In portable power adapters, LED driver power supplies, and other battery-powered devices, SiA517DJ-T1-GE3-VB can be used as a switching element of a DC-DC converter to efficiently manage voltage and current conversion.
**3. Motor drive circuit**
- **Application scenario**: Due to the bipolar characteristics of this MOSFET (N channel and P channel), it is very suitable for use in the H-Bridge circuit of motor drive, which can effectively control the forward and reverse direction and speed of the motor.
- **Example**: In robots, power tools and household appliances, SiA517DJ-T1-GE3-VB can be used to drive motors, especially in situations where forward and reverse control is required, such as electric curtains, electric doors and other equipment.
**4. Switching power supply (SMPS)**
- **Application scenario**: This dual N+P channel MOSFET is suitable for **switching power supply (SMPS)**, reducing power loss and improving system efficiency through efficient switching control.
- **Example**: In LED driver power supplies, power adapters and other low-power consumer electronics, SiA517DJ-T1-GE3-VB can provide efficient power management to ensure the stability and reliability of voltage conversion.
**5. Current protection circuit**
- **Application scenario**: SiA517DJ-T1-GE3-VB can also be used in current protection circuits to prevent current overload or short circuit. Its **low R_DS(on)** and high current capability make it excellent in protection circuits.
- **Example**: In various battery-powered devices, power modules and power tools, MOSFET can be used to prevent equipment from being damaged by overcurrent and ensure safe operation.
**6. High-frequency signal switching**
- **Application scenario**: Due to its low on-resistance and fast switching performance, SiA517DJ-T1-GE3-VB can also be used for high-frequency signal switching and efficient signal transmission.
- **Example**: In radio frequency (RF) circuits and communication equipment, MOSFET can be used for fast switching signal paths to ensure the quality and efficiency of signal transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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