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SiA444DJT-T1-GE3-VB Product details

Product introduction:

**Product Introduction: **

**SiA444DJT-T1-GE3-VB** is a single N-type MOSFET in **DFN6(2X2)** package. It is designed based on **Trench** technology and has excellent switching characteristics and low on-resistance. It is widely used in various low-voltage, high-efficiency power management and switch control applications. The device has a maximum drain-source voltage (VDS) of 30V and a maximum gate-source voltage (VGS) of ±20V. It is suitable for systems that require efficient current control, especially for battery-powered and small power modules. The SiA444DJT-T1-GE3-VB has an on-resistance of 27mΩ at VGS=4.5V and 23mΩ at VGS=10V. The maximum drain current is 6A, which can provide efficient power management and achieve excellent performance in a variety of application environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-N 30V 1.7V 6A 23mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-N 30V 1.7V 6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-N 30V 1.7V 6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-N
**Detailed parameter description:**

- **Model:** SiA444DJT-T1-GE3-VB
- **Package:** DFN6(2X2)
- **Configuration:** Single N-type MOSFET
- **VDS (drain-source voltage):** 30V (maximum)
- **VGS (gate-source voltage):** ±20V (maximum)
- **Vth (throw-on voltage):** 1.7V
- **RDS(ON):**
- 27mΩ @ VGS = 4.5V
- 23mΩ @ VGS = 10V
- **ID (drain current):** 6A
- **Technology:** Trench (deep trench technology)
- **Operating temperature range:** -55°C to +150°C (see the data sheet for specific temperature range)
- **Package type:** DFN6 (2X2), suitable for automatic patch assembly, compact space, suitable for applications requiring small space.

Domain and module applications:

**Application fields and module examples:**

1. **DC-DC power conversion:**
- **Application fields:** Power conversion, low-power power modules
- **SiA444DJT-T1-GE3-VB** is particularly suitable for switching applications in DC-DC converters, providing low on-resistance to improve efficiency, and is particularly suitable for low-voltage power conversion tasks.
- **Example:** In mobile devices, battery-powered products (such as portable audio, handheld devices), etc., this MOSFET can be used in a buck converter to efficiently convert the battery voltage to the required voltage output and provide a stable power supply.

2. **Battery management system:**
- **Application fields:** Battery charge and discharge control, smart battery system
- **SiA444DJT-T1-GE3-VB** can be used in battery management systems to improve system efficiency and extend battery life by controlling the battery charge and discharge process. Low RDS(ON) ensures less power loss.
- **Example:** In the battery management system of power tools or electric vehicles, MOSFETs can be used as switching elements to ensure efficient current flow and help balance the battery charging and discharging process.

3. **LED drive and lighting control:**
- **Application areas:** LED drive, lighting system
- **SiA444DJT-T1-GE3-VB** is suitable for LED driver modules, especially in low-voltage power supply designs. Through low on-resistance, MOSFETs can improve drive efficiency and ensure stable current output.
- **Example:** In home or commercial lighting systems, MOSFETs can be used in LED drive circuits to provide stable current control to ensure that LED lighting operates at high efficiency.

4. **Power adapter and power module:**
- **Application field:** AC-DC power conversion, battery charger
- **SiA444DJT-T1-GE3-VB** can be widely used in power adapters and chargers, especially suitable for efficient power management systems to reduce energy loss.
- **Example:** In small power adapters and charging modules, MOSFET can be used to achieve AC-DC power conversion, provide stable and efficient output, and is suitable for power management of various consumer electronic devices.

5. **Automotive electronic system:**
- **Application field:** Battery management, electric vehicle system
- **SiA444DJT-T1-GE3-VB** is also suitable for automotive electronics, especially in the battery management system of electric vehicles or hybrid vehicles, responsible for controlling the battery charging and discharging process.
- **Example:** In the battery system of electric vehicles, MOSFET is used for battery switching control, improving energy efficiency and extending battery life, while ensuring a stable supply of current.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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