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SI9926CDY-T1-GE3-VB Product details

Product introduction:

1. **Product Introduction (SI9926CDY-T1-GE3-VB)**

**SI9926CDY-T1-GE3-VB** is a high-performance dual N-Channel power MOSFET in SOP8 package, designed for low-voltage, high-efficiency power management and switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, the maximum drain current (ID) is 7.1A, and it has a low on-resistance (RDS(ON)). Its on-resistance is 19mΩ at VGS=10V and 26mΩ at VGS=4.5V, providing efficient current control for a variety of low-voltage and low-power applications.

This MOSFET uses advanced Trench technology to ensure excellent performance and low power loss. **SI9926CDY-T1-GE3-VB** is widely used in consumer electronics, communication equipment, automation control, power management and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
2. **Detailed parameter description**

| **Parameter** | **Description** |
|----------------------|------------------------------------------------------------|
| **Model** | SI9926CDY-T1-GE3-VB |
| **Package type** | SOP8 |
| **Configuration** | Dual N-Channel (N+N) |
| **VDS (drain-source voltage)** | 20V |
| **VGS (gate-source voltage)** | ±12V |
| **Vth (throw-on voltage)** | 0.5V to 1.5V |
| **RDS(ON) (on-resistance)** | 26mΩ (VGS=4.5V) / 19mΩ (VGS=10V) |
| **ID (drain current)** | 7.1A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to 150°C |
| **Maximum power consumption** | High-performance power management, load switching and load control for low-power devices |

Domain and module applications:

3. **Application fields and module examples**

#### 1) **Power management and DC-DC converters**
SI9926CDY-T1-GE3-VB has excellent applications in power management systems, especially as a switching element in DC-DC converters, which can achieve efficient power conversion. Its low on-resistance (RDS(ON)) and high current carrying capacity are suitable for use in high-frequency switching modes to provide higher conversion efficiency. For example, in the power management modules of mobile phones, tablets and other portable devices, this MOSFET can be used to improve battery charging efficiency and reduce energy loss.

#### 2) **Low-power consumer electronics devices**
This MOSFET is widely used in low-power consumer electronics products. Its compact SOP8 package and low on-resistance make it very suitable for use in circuits that require high efficiency and low power consumption. Whether it is wearable devices, smart home control systems, or other low-voltage applications, SI9926CDY-T1-GE3-VB can provide reliable power switch control to ensure efficient operation of the system.

#### 3) **Load switch and battery protection**
SI9926CDY-T1-GE3-VB is suitable for scenarios that require efficient load switch control, especially in battery-powered systems such as smartphones, power tools, drones and other devices. Its high-efficiency current switch can reduce energy loss and extend the service life of the battery. In addition, it can also be used as part of the battery protection circuit for overcurrent protection, overvoltage protection and other functions.

#### 4) **Battery management system**
In the battery management system (BMS), SI9926CDY-T1-GE3-VB can be used as a switching element to control battery charging and discharging. It is particularly suitable for charging management of lithium batteries and can accurately control the battery charging and discharging process to ensure the health and long life of the battery. The low on-resistance of this MOSFET makes battery charging more efficient and can operate in a small size and high performance requirements.

#### 5) **Power Control and Synchronous Rectification**
This MOSFET is also widely used in synchronous rectification, which can effectively reduce the loss of reverse current and improve power conversion efficiency. It is suitable for switching power supplies (SMPS), LED driver power supplies, and other modules that require high-efficiency current switching.

#### 6) **Automation and Communication Equipment**
In automation control systems and communication equipment, SI9926CDY-T1-GE3-VB can be used as a load switch and power switch element to handle high-frequency signals and current loads. It performs well in communication modules, sensors, power adapters and other devices, can support efficient power management, and reduce overall power consumption.

### Summary:
**SI9926CDY-T1-GE3-VB** is a low-voltage, high-efficiency dual N-Channel power MOSFET, suitable for a variety of low-power, high-efficiency power management, load switches and battery management systems. With its low on-resistance and high current capability, it is widely used in consumer electronics, battery protection, power conversion and automation control, providing users with excellent performance and efficient power utilization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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