Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-B |
Dual-P+P |
-30V |
|
-1.7V |
-6.4A |
|
|
38mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3)-B |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3)-B |
Dual-P+P |
-30V |
|
-1.7V |
-6.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3)-B |
Dual-P+P |
-30V |
|
-1.7V |
-6.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3)-B |
Dual-P+P |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** -30V
- This MOSFET supports a maximum drain-source voltage of -30V, suitable for medium and low voltage power supplies and conversion systems, and can handle relatively low voltage currents.
- **VGS (gate-source voltage): ** ±20V
- Supports a maximum gate-source voltage of ±20V, ensuring compatibility with a variety of standard drive circuits and enabling efficient control according to system requirements.
- **Vth (threshold voltage): ** -1.7V
- This MOSFET has a low threshold voltage and can effectively conduct at a low gate-source voltage, suitable for low voltage operating systems, ensuring fast response of switching operations.
- **RDS(ON)（on resistance）：**
- 60mΩ@VGS=4.5V
- 38mΩ@VGS=10V
- Low on resistance means that power loss can be effectively reduced and conversion efficiency can be improved when conducting, which is especially suitable for high-efficiency power supply systems.
- **ID（drain current）：** -6.4A
- The maximum drain current is -6.4A, which is suitable for medium and low power applications, providing stable current carrying capacity, especially suitable for battery drive and power management circuits.
- **Technology:** Trench
- Using trench technology, it has the characteristics of low on resistance and high switching efficiency, and is suitable for systems with high performance and low power loss requirements.
Domain and module applications：
Application fields and module examples
1. **Power Management Systems:**
SI7901EDN-VB can be widely used in power management systems, especially in scenarios that require bipolar switch control, such as dual-phase DC-DC converters. Its low RDS(ON) characteristics can effectively reduce power loss and improve power conversion efficiency, making it suitable for efficient power management.
2. **DC-DC Converter:**
This MOSFET can be used as a key switching element in a DC-DC converter, especially in a buck or boost converter. The low on-resistance ensures minimal loss when current flows, which helps improve overall power efficiency and reduce heat generation.
3. **Battery Management System (BMS):**
In a battery management system (BMS), SI7901EDN-VB is very suitable for battery charge and discharge control. Its dual P-channel design is particularly suitable for controlling the charging and discharging paths of the battery, which can effectively manage the flow of battery current, improve the battery charging and discharging efficiency, and prevent the battery from being overcharged or over-discharged.
4. **Power tools and battery-driven devices:**
In power tools (such as electric screwdrivers, electric drills, etc.), MOSFET as a power switch can efficiently control the battery current and ensure the stability and high efficiency of the tool during use. Since SI7901EDN-VB can provide efficient switching and reduce power loss, it is suitable for power tools and battery-driven devices to help extend battery life.
5. **Electric vehicle (EV) and hybrid vehicle (HEV) drive system:**
SI7901EDN-VB can provide excellent performance in the battery management system and drive system of electric vehicles and hybrid vehicles. Its low RDS(ON) characteristics reduce energy loss, improve the efficiency of motors and drive circuits, and ensure stable operation of the system.
6. **LED Driver:**
In LED driver, SI7901EDN-VB can provide efficient switching characteristics, help control LED current, and effectively reduce power loss. The low on-resistance characteristics of MOSFET help improve the efficiency of LED driver, thereby extending the service life of LED lamps.
7. **Power Adapters:**
This MOSFET is also very suitable for use in various power adapters, especially those with portable and high-efficiency requirements. Low on-resistance and high current capability enable it to provide smooth and efficient current conversion in the output section of the power adapter.
8. **Power Factor Correction (PFC) Circuit:**
In the power factor correction circuit, SI7901EDN-VB can help optimize the power factor and improve power efficiency. Its high switching efficiency and low on-resistance characteristics can effectively reduce power loss and improve the stability of the overall power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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