Product introduction:
Product Introduction - SI7892DP-T1-GE3-VB
**SI7892DP-T1-GE3-VB** is a single N-type MOSFET with advanced Trench technology, packaged in DFN8 (5x6) type, designed for high-efficiency, high-current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, it can carry a drain current (ID) of up to 120A, and has a very low on-resistance (RDS(ON)), which is 5mΩ at VGS=4.5V and 3mΩ at VGS=10V. This low on-resistance characteristic enables the SI7892DP-T1-GE3-VB to significantly reduce power loss and reduce system heating in high-current applications, thereby improving overall efficiency. It is ideal for applications that require high efficiency and high current handling, such as power management, load switching, and battery management systems.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8 (5x6)
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: 20V (±V)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications:
Application fields and module examples
1. **Power management system**
SI7892DP-T1-GE3-VB is suitable for various power management applications, especially in high-efficiency DC-DC converters, power adapters and high-efficiency voltage regulation modules. Due to its low on-resistance (5mΩ and 3mΩ), this MOSFET can significantly reduce energy loss during power conversion and reduce heat generated by current flow, thereby improving the efficiency and stability of the overall power system. It is particularly suitable for working in applications that require high current support and low power loss.
2. **Electric vehicle (EV) battery management system**
In the battery management system of electric vehicles, SI7892DP-T1-GE3-VB plays an important role, especially in battery charge and discharge control, balancing circuits and overcurrent protection modules. Its maximum drain current capability is 120A, which can support the high current demand when the battery is quickly charged and discharged, and reduce power loss in the battery management process through low RDS(ON), helping to optimize battery charging efficiency and extend battery life.
3. **Load Switching and Current Control**
SI7892DP-T1-GE3-VB is ideal for high current load switching and current control applications. For example, it can be used in motor drive systems, LED driver power supplies, and high power load control. Its low on-resistance enables it to reduce energy loss and heat generation when switching loads, and is particularly suitable for applications that require frequent switching and high current handling, such as power tools, industrial drive systems, etc.
4. **High Efficiency Battery Charger**
In fast charger applications, SI7892DP-T1-GE3-VB provides an efficient charging control solution, especially for high power charging devices such as power tools, mobile power supplies, and electric vehicle chargers. Low on-resistance reduces power loss during charging, improves charging efficiency, and shortens charging time, making it particularly suitable for efficient charging technology and high power charging environments.
5. **Portable device power management**
SI7892DP-T1-GE3-VB is widely used in portable devices such as smartphones, laptops and other battery-driven devices. The low on-resistance and high current carrying capacity of this MOSFET make it very efficient in battery management and power conversion, which can reduce the energy loss of the device under high power load and extend the battery life. It is particularly suitable for portable devices with high battery performance requirements and high-efficiency power management.
6. **Motor drive system**
SI7892DP-T1-GE3-VB provides a stable and reliable current management solution in power tools, electric vehicles and various household appliance motor drive systems. Its high current carrying capacity (maximum 120A) is suitable for high-power motor drive applications, which can effectively reduce energy loss during motor startup and operation, and improve system efficiency and reliability. The low RDS(ON) value can reduce heat generation during motor drive and improve the long-term stability of the system.
These applications demonstrate the wide applicability of SI7892DP-T1-GE3-VB in multiple high current and high efficiency fields. It can provide efficient power management, load switch control, battery management and other functions, especially for systems requiring high current and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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