Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI7892BDP-T1-GE3-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Drain Current (ID)**: 120A
- **Technology**: Trench technology (low on-resistance, high efficiency)
- **Operating Temperature Range**: -55°C to 150°C
- **Application**: High frequency switching power supply, battery management system, electric vehicle drive, power conversion, etc.
Domain and module applications：
Applicable fields and modules
**1. Power management module **
- Due to its ultra-low on-resistance and high leakage current capability, SI7892BDP-T1-GE3-VB MOSFET performs well in switching power supplies, especially for high-efficiency DC-DC converters. Its low RDS(ON) can reduce power loss, improve conversion efficiency, and extend the service life and stability of the system.
**2. Battery Management System (BMS) **
- In the battery management system, the high current carrying capacity and high-efficiency conversion characteristics of MOSFET make it very suitable for battery charging and discharging process control. Especially in electric vehicles and energy storage systems, it can efficiently handle the switching between battery charging and discharging, reduce battery heat generation and improve overall efficiency.
**3. Electric vehicle (EV) drive system **
- The battery and drive system in electric vehicles require efficient power transmission. SI7892BDP-T1-GE3-VB MOSFET, due to its high current carrying capacity and low loss characteristics, can be efficiently switched in motor control modules and inverters, optimize driving performance, and extend battery life.
**4. Industrial power supply applications**
- In the field of industrial power supply, especially modules that require high efficiency and stable output, such as power tools, industrial robots, and high-frequency heating equipment, the low RDS(ON) and high current load capacity of SI7892BDP-T1-GE3-VB can ensure reliability and efficiency during long-term operation.
**5. Automotive electronic modules**
- In automotive electronic applications, especially for demanding fields such as automotive battery charge and discharge management and power system control, this MOSFET provides excellent current management and energy conversion efficiency, ensuring stable operation of the system and efficient power transmission.
Through these applications, the low RDS(ON), high current capability and high reliability of the SI7892BDP-T1-GE3-VB make it an ideal choice for high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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