Product introduction：
**SI7850DP-VB MOSFET Product Introduction**
SI7850DP-VB is a unipolar N-channel MOSFET based on Trench technology, packaged in DFN8 (5x6) package. This MOSFET has a high drain-source voltage (VDS) of 60V and supports a maximum drain current (ID) of 15A, suitable for a variety of low-power to medium-power applications. SI7850DP-VB can still maintain a low on-resistance at low gate voltage (VGS). When VGS = 10V, RDS(ON) is only 24mΩ, ensuring switching efficiency and reducing energy loss. The gate threshold voltage (Vth) is 1.7V, which is suitable for low-voltage drive applications. With its excellent performance, SI7850DP-VB is widely used in high-efficiency power management, load switching, power tools, automotive electronics and other fields, providing reliable current control and low power loss.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
1.7V |
15A |
|
|
24mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
1.7V |
15A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
1.7V |
15A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**SI7850DP-VB MOSFET detailed parameter description**
- **Model**: SI7850DP-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 4.5V
- 24mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
- **Maximum power dissipation**: 70W (depending on environmental conditions)
- **Maximum gate charge (Qg)**: 20nC
- **Maximum drain charge (Qd)**: 70nC
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 2300pF (typical)
SI7850DP-VB provides lower on-resistance and supports higher current carrying capability, suitable for low power supply and load switching applications, especially in efficient power conversion systems.
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Domain and module applications：
**SI7850DP-VB MOSFET application areas and module examples**
1. **Power management and voltage conversion modules**
SI7850DP-VB is suitable for DC-DC converters, power distribution modules and other power management systems, which can effectively reduce switching losses and ensure the efficiency of power conversion. Its low RDS(ON) value enables it to provide efficient current management in power modules, reduce power losses and improve system efficiency.
2. **Battery Management System (BMS)**
In the battery management system, SI7850DP-VB can be used for current switches in the charging and discharging paths to ensure safe and efficient operation of the battery under different working conditions. Its low on-resistance can improve charging and discharging efficiency and extend battery life in power tools, electric vehicles (EVs) and other battery-driven devices.
3. **Power tool and home appliance switch control**
In power tools, power equipment and home appliances, SI7850DP-VB can be used as part of the load switch module to achieve efficient current switching. Its excellent on-resistance and current carrying capacity ensure that these devices have low power loss and high efficiency during startup and operation.
4. **Automotive electronic applications**
In automotive electronic systems, SI7850DP-VB can be used in battery management, charging systems and drive control in electric vehicles (EVs), hybrid electric vehicles (HEVs) and traditional vehicles. This MOSFET is suitable for battery power conversion, electric drive systems and other applications that require high-efficiency current control, especially in the energy management system of electric vehicles.
5. **Power amplifier and RF applications**
SI7850DP-VB can be used to provide current switching and amplification functions in power amplifier and RF applications. Especially under high frequency and high power conditions, low on-resistance helps to reduce power loss and ensure stable system operation. This is especially important for high-frequency power conversion in communication equipment.
6. **Adjustable power supply and load regulation module**
In the adjustable power supply and load regulation module, SI7850DP-VB can provide precise current control and efficient load switching. Its low on-resistance and high current carrying capacity enable it to work stably in various high-efficiency current regulation systems, suitable for applications requiring high precision and low loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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