Product introduction：
SI7848DP-T1-GE3-VB MOSFET Product Introduction
**Model:** SI7848DP-T1-GE3-VB
**Package Type:** DFN8(5x6)
**Configuration:** Single-N-Channel
**Maximum Drain-Source Voltage (VDS):** 40V
**Maximum Gate-Source Voltage (VGS):** ±20V
**Threshold Voltage (Vth):** 2.5V
**On-Resistance (RDS(ON)):**
- 6mΩ@VGS=4.5V
- 4.7mΩ@VGS=10V
**Maximum Drain Current (ID):** 70A
**Technology:** Trench technology
SI7848DP-T1-GE3-VB is a high-performance N-channel MOSFET in DFN8 (5x6) package with excellent conductivity, suitable for high-current, high-efficiency power systems. The low on-resistance and high current carrying capacity of this MOSFET make it widely used in power conversion, power management, drive control and other fields. Thanks to the advanced trench technology, this MOSFET can provide efficient switching control at a lower gate-source voltage, reduce the power loss of the system and improve energy efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
|
4.7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
2.5V |
70A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 40V
- Supports a maximum drain-source voltage of 40V, suitable for medium voltage applications, and provides stronger current control capabilities.
- **VGS (gate-source voltage): ** ±20V
- The maximum gate-source voltage is ±20V, ensuring that the MOSFET can work stably in a variety of common drive circuits.
- **Vth (threshold voltage): ** 2.5V
- The threshold voltage of the MOSFET is 2.5V, which means that it starts to conduct when the gate-source voltage is 2.5V, which is suitable for efficient control of low-voltage systems.
- **RDS(ON) (on-resistance):**
- 6mΩ (VGS=4.5V)
- 4.7mΩ (VGS=10V)
- The on-resistance is very low, which means that when high current flows, this MOSFET will significantly reduce power losses, improve overall system efficiency, and reduce heat generation.
- **ID (drain current):** 70A
- The maximum drain current is 70A, which is suitable for switching control of high current loads and can withstand high power loads without overheating or failure issues.
- **Technology:** Trench
- Using advanced trench technology, it provides low on-resistance, high switching speed and high efficiency, making it outstanding in power conversion and high-frequency switching applications.
Domain and module applications：
Application fields and module examples
1. **DC-DC converter:**
SI7848DP-T1-GE3-VB MOSFET is very suitable for use as a switching element in DC-DC converters. Its low on-resistance and high current carrying capacity enable it to play an important role in efficient power conversion, especially in low voltage and high current scenarios, which can reduce power loss and improve conversion efficiency.
2. **Power management system:**
In the power management system, the low RDS(ON) characteristics of this MOSFET enable it to effectively regulate current and optimize the energy efficiency of the power supply, especially in applications such as battery management and load switching, which can provide a stable power supply and reduce unnecessary energy loss.
3. **Battery charger:**
Due to its low on-resistance and high drain current capability, SI7848DP-T1-GE3-VB MOSFET is very suitable for battery chargers. It can provide efficient current control during charging, reduce power loss during charging, improve overall charging speed and efficiency, and reduce temperature rise.
4. **Power tools and appliances:**
In high-power electrical devices such as power tools and electric appliances, SI7848DP-T1-GE3-VB MOSFET can withstand high current (up to 70A) to drive motors or other high-power components. Its excellent conductivity and low power loss help these devices improve energy efficiency and extend service life.
5. **Electric vehicle charging system:**
Electric vehicle charging systems usually require efficient and stable power conversion and current control. SI7848DP-T1-GE3-VB MOSFET can work efficiently during the charging process of electric vehicles. Through its low on-resistance and high current carrying capacity, it can achieve efficient charging and energy management, and reduce the heat and loss generated during the charging process.
6. **Power factor correction (PFC) module:**
SI7848DP-T1-GE3-VB MOSFET is also suitable for power factor correction (PFC) modules, especially in power systems that require high current and high efficiency. It can provide efficient switching control in the PFC circuit, improve the power factor of the power supply, reduce energy waste, and improve the overall efficiency of the power supply system.
7. **LED driver power supply:**
In the LED driver power supply, SI7848DP-T1-GE3-VB MOSFET can provide efficient current regulation to ensure high brightness and long life of LED lamps. The low RDS(ON) characteristic reduces the energy loss during switching, ensuring that the LED driver has excellent energy efficiency and thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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