Featured Model

Your present location > Home page > Featured Model

SI7840DP-T1-GE3-VB Product details

Product introduction:

Product Introduction - SI7840DP-T1-GE3-VB

**SI7840DP-T1-GE3-VB** is a unipolar N-type MOSFET using Trench technology, packaged in DFN8 (5x6) type, with excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is 30V, and it can carry a drain current (ID) of up to 80A, suitable for high-current, high-efficiency applications. This MOSFET has a very low on-resistance (RDS(ON)) of 9mΩ and 7mΩ respectively when driven at low voltage (VGS=4.5V and VGS=10V), which can effectively reduce the energy loss and heat generated during the current flow, thereby improving the overall efficiency of the system. Its high current handling capability and low power consumption make it very suitable for power management, battery management and high-efficiency power conversion systems.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Package type**: DFN8 (5x6)
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: 20V (±V)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Power management system**
SI7840DP-T1-GE3-VB is suitable for power management systems that require high efficiency, especially in DC-DC converters, power adapters and other power modules. Its low RDS(ON) value (9mΩ and 7mΩ) can reduce energy loss and improve the overall conversion efficiency of the system. It is particularly suitable for power systems that require frequent switching operations, such as power conversion and voltage regulated power supplies.

2. **Electric vehicle (EV) battery management system**
In the battery management system of electric vehicles, this MOSFET can be used for battery charge and discharge control, protection circuits and battery monitoring systems. Due to its ability to carry currents up to 80A and its low on-resistance, SI7840DP-T1-GE3-VB can effectively reduce the heat and energy loss generated in the battery management process, ensuring efficient operation of the battery during the charge and discharge process.

3. **Load Switching and Current Control**
SI7840DP-T1-GE3-VB can be used in various load switching applications, especially the switching control of high current loads, such as motor drive, battery drive, LED drive power supply, etc. Due to its low on-resistance characteristics, this MOSFET can effectively reduce the energy loss during load switching while providing stable current control.

4. **High-efficiency Battery Charger**
In fast chargers, SI7840DP-T1-GE3-VB is an ideal choice. Its low RDS(ON) value can reduce power loss during charging, effectively reduce system temperature, and improve charging efficiency. In high-power fast charging applications, this MOSFET can significantly improve the performance of the charger and accelerate the charging speed.

5. **Portable Device Power Management**
In portable devices (such as smartphones, tablets, laptops, etc.), SI7840DP-T1-GE3-VB can be used as part of a power management module to provide efficient power conversion and battery management. Its low on-resistance and high current carrying capacity make it ideal for space-constrained designs, providing efficient and reliable power solutions, extending the battery life of the device and reducing charging time.

6. **Motor Drive System**
In power tool or appliance motor drive systems, SI7840DP-T1-GE3-VB provides high current carrying capacity and low power loss to help improve the efficiency of the motor system. It is particularly suitable for motor drive applications that require high-frequency switching and low heat generation, which can ensure stable operation of the motor under high load, reduce energy loss and improve equipment reliability.

These application scenarios demonstrate the wide applicability of the SI7840DP-T1-GE3-VB in multiple high-performance power management, battery management and motor drive fields, and are particularly suitable for systems that require high efficiency and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat