Product introduction：
1. **Product Introduction (SI7716ADN-T1-GE3-VB)**
**SI7716ADN-T1-GE3-VB** is a unipolar N-Channel power MOSFET in a DFN8 (3×3) package, designed for power management applications that require high efficiency and low on-resistance. This MOSFET has a high current capability and can withstand a maximum drain current of 30A, making it suitable for a variety of high-efficiency power switching applications. Its VDS (drain-source voltage) is 30V, which can provide reliable voltage control and current switching capabilities, while also having excellent thermal performance to ensure long-term stable operation.
This MOSFET uses Trench technology and has low RDS(ON) characteristics. When VGS=10V, the on-resistance is only 13mΩ, which can effectively reduce power loss and improve system efficiency when switching at high currents. It is suitable for electronic devices that require fast switching and low losses, such as power converters, motor drives, and battery management.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
|
13mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
2. **Detailed parameter description**
| **Parameter** | **Description** |
|------------------|------------------------------------------------------------|
| **Model** | SI7716ADN-T1-GE3-VB |
| **Package type** | DFN8 (3×3) |
| **Configuration** | Unipolar N-Channel |
| **VDS (drain-source voltage)** | 30V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (throw-on voltage)** | 1.7V |
| **RDS(ON) (on-resistance)** | 19mΩ (VGS=4.5V) / 13mΩ (VGS=10V) |
| **ID (drain current)** | 30A |
| **Technology** | Trench |
| **Rated power** | Suitable for applications such as high-efficiency power management, battery management, switching power supplies, etc. |
| **Operating temperature range** | -55°C to 150°C |
Domain and module applications：
3. **Application fields and module examples**
#### 1) **Power management and DC-DC converters**
SI7716ADN-T1-GE3-VB can be widely used in power management systems, especially in DC-DC converters. Its low on-resistance and high current capability make it an ideal choice for efficient power conversion. The high switching speed and low RDS(ON) characteristics of MOSFET can significantly reduce power loss, improve power efficiency and reduce heat dissipation problems, making it suitable for mobile devices, power supply and other efficient power conversion applications.
#### 2) **Battery Management System (BMS)**
In battery management systems, SI7716ADN-T1-GE3-VB is a very ideal choice. Its high current carrying capacity and fast response switching characteristics enable it to effectively control the battery charging and discharging process, protecting the battery from damage due to overcurrent, overvoltage and other conditions. In addition, the low RDS(ON) of the MOSFET ensures high efficiency and long-term stable operation of the battery management system, which is suitable for battery management of power tools, electric vehicles (EVs) and portable devices.
#### 3) **Motor drive module**
This MOSFET is suitable for brushless DC motor (BLDC) and stepper motor drive systems. In motor control applications, SI7716ADN-T1-GE3-VB can provide efficient switching operation, reduce switching losses and heat accumulation, and improve motor drive efficiency. Due to its low on-resistance, it can maintain efficient performance when the motor load changes, and is widely used in motor drives in robots, power tools and home appliances.
#### 4) **Load switch and power protection**
SI7716ADN-T1-GE3-VB is also commonly used in load switch and power protection modules, which can quickly respond to current changes and achieve efficient load switching. Its low RDS(ON) ensures lower power loss, provides precise switching control in protection circuits to avoid current overload, and is suitable for power switches in intelligent power management systems and industrial automation equipment.
#### 5) **Automotive Electronics Applications**
In the field of automotive electronics, SI7716ADN-T1-GE3-VB can be used for battery voltage regulation, powertrain management, and on-board power systems. Its excellent conduction performance and high current capacity enable stable operation under harsh environmental conditions, ensuring the efficiency and safety of the power management systems of electric vehicles and other on-board equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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