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SI7682DP-T1-GE3-VB Product details

Product introduction:

Product Introduction

**SI7682DP-T1-GE3-VB** is a high-performance single-tube N-Channel MOSFET in a DFN8(5X6) package with low on-resistance and high current carrying capacity. Its maximum drain-source voltage (V_DS) is 30V, suitable for high current and high frequency power management applications. The gate threshold voltage (V_th) of this MOSFET is 1.7V, and it has a low on-resistance (R_DS(ON)) of 9mΩ @ V_GS = 4.5V and 7mΩ @ V_GS = 10V, which ensures optimal performance in high-efficiency and low-power systems. The maximum drain current (I_D) is 80A, making it particularly suitable for applications that require high current drive.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Model**: SI7682DP-T1-GE3-VB
- **Package**: DFN8(5X6)
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 80A
- **Technology**: Trench technology

Domain and module applications:

Applicable fields and modules

1. **Power management and conversion**:
SI7682DP-T1-GE3-VB's low R_DS(ON) and high current carrying capacity make it very suitable for DC-DC converters, AC-DC power supplies, and power conditioning modules. It can effectively reduce power consumption and improve efficiency, especially maintaining low heat output under high load current, so it is particularly suitable for power management modules.

2. **Battery Management System (BMS)**:
This MOSFET can be widely used in battery management systems (BMS), especially in battery charging and discharging processes that require high current switching. Due to its excellent conduction characteristics, it can effectively control the current flow during battery charging and discharging, ensuring the stability and reliability of the system.

3. **Power Tools and Portable Power Equipment**:
In power tools or high-power portable power equipment, the high current carrying capability and low on-resistance of SI7682DP-T1-GE3-VB make it ideal for high-efficiency power switches and current control modules. It can operate under high power loads, thus ensuring long-term operation of the equipment.

4. **Electric Vehicle (EV) Power System**:
Due to the high current capability and low on-resistance of this MOSFET, it is particularly suitable for battery management and power distribution systems in electric vehicles. It can be used in battery charging, inverter modules, and electric drive systems of electric vehicles to provide efficient current switching and control.

5. **Smart Home and Internet of Things (IoT) Devices**:
In smart home systems and IoT devices, SI7682DP-T1-GE3-VB can effectively drive efficient power management systems, especially in application scenarios with low power requirements. It can provide efficient current control and ensure long-term operation and low energy consumption of the equipment.

6. **Automotive electronics and power electronics modules**:
The high conductivity and low on-resistance of this MOSFET make it very suitable for power control modules in automotive electronics, such as electric windows, seat adjustment systems, etc. It can maintain stable operation in an environment with large load changes to avoid current surges from damaging the system.

Through these applications, it can be seen that **SI7682DP-T1-GE3-VB** MOSFET performs well in power management and conversion applications that require high current and low power consumption, and is suitable for efficient power control and modules in various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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