Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI7682DP-T1-GE3-VB
- **Package**: DFN8(5X6)
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 80A
- **Technology**: Trench technology
Domain and module applications:
Applicable fields and modules
1. **Power management and conversion**:
SI7682DP-T1-GE3-VB's low R_DS(ON) and high current carrying capacity make it very suitable for DC-DC converters, AC-DC power supplies, and power conditioning modules. It can effectively reduce power consumption and improve efficiency, especially maintaining low heat output under high load current, so it is particularly suitable for power management modules.
2. **Battery Management System (BMS)**:
This MOSFET can be widely used in battery management systems (BMS), especially in battery charging and discharging processes that require high current switching. Due to its excellent conduction characteristics, it can effectively control the current flow during battery charging and discharging, ensuring the stability and reliability of the system.
3. **Power Tools and Portable Power Equipment**:
In power tools or high-power portable power equipment, the high current carrying capability and low on-resistance of SI7682DP-T1-GE3-VB make it ideal for high-efficiency power switches and current control modules. It can operate under high power loads, thus ensuring long-term operation of the equipment.
4. **Electric Vehicle (EV) Power System**:
Due to the high current capability and low on-resistance of this MOSFET, it is particularly suitable for battery management and power distribution systems in electric vehicles. It can be used in battery charging, inverter modules, and electric drive systems of electric vehicles to provide efficient current switching and control.
5. **Smart Home and Internet of Things (IoT) Devices**:
In smart home systems and IoT devices, SI7682DP-T1-GE3-VB can effectively drive efficient power management systems, especially in application scenarios with low power requirements. It can provide efficient current control and ensure long-term operation and low energy consumption of the equipment.
6. **Automotive electronics and power electronics modules**:
The high conductivity and low on-resistance of this MOSFET make it very suitable for power control modules in automotive electronics, such as electric windows, seat adjustment systems, etc. It can maintain stable operation in an environment with large load changes to avoid current surges from damaging the system.
Through these applications, it can be seen that **SI7682DP-T1-GE3-VB** MOSFET performs well in power management and conversion applications that require high current and low power consumption, and is suitable for efficient power control and modules in various fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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