Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**Detailed parameter description:**
- **Model:** SI7652DP-T1-GE3-VB
- **Package:** DFN8(5X6)
- **Configuration:** Unipolar N-type MOSFET
- **VDS (drain-source voltage):** 30V (maximum)
- **VGS (gate-source voltage):** ±20V (maximum)
- **Vth (throw-on voltage):** 1.7V
- **RDS(ON):**
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID (drain current):** 80A (maximum)
- **Technology:** Trench (deep trench technology)
- **Operating temperature range:** -55°C to +150°C (please refer to the data sheet for the specific range)
Domain and module applications:
**Application fields and module examples:**
1. **Efficient power management:**
- SI7652DP-T1-GE3-VB's low on-resistance and high current carrying capacity make it very suitable for use in efficient power management systems. In power modules such as DC-DC converters, AC-DC adapters, and battery management systems (BMS), MOSFETs can act as efficient switching elements to reduce power losses and improve efficiency.
- For example, in mobile device chargers, MOSFETs can help converters run at lower temperatures, thereby improving the overall energy efficiency and stability of the device.
2. **Electric vehicles (EV) and hybrid vehicles (HEV):**
- In the battery management system (BMS) and electric drive control of electric vehicles, SI7652DP-T1-GE3-VB is very suitable for use as a battery switching element or power converter due to its high current capacity and low power loss. It can provide efficient current regulation in the drive motor and powertrain of electric vehicles to improve driving range.
- For example, in the motor drive control module of electric vehicles, MOSFET is responsible for fast switching of current, enabling the drive system to operate efficiently and reduce energy waste.
3. **Server Power and Data Center:**
- In data centers and high-performance computing systems, stable and efficient power conversion is essential. SI7652DP-T1-GE3-VB, as the core switching element in the power converter, can effectively reduce the energy loss of the DC-DC converter and improve the overall power efficiency of the system.
- For example, in the server power module, MOSFET can be used to handle the fast switching of load current and achieve efficient operation during the power conversion process to maintain stable voltage output.
4. **Communication Equipment:**
- The application of SI7652DP-T1-GE3-VB in communication equipment is mainly concentrated in high-efficiency power supply systems, especially in power amplifiers (PA) and RF modules. It can provide low-loss current switching at high frequencies, making RF and communication signals more stable.
- For example, in power modules for wireless base stations, satellite communication systems, and other communication equipment, MOSFETs can help regulate the supply voltage while ensuring efficient transmission and low heat loss.
5. **Consumer Electronics:**
- In power modules for consumer electronic devices such as laptops, TVs, and home appliances, the SI7652DP-T1-GE3-VB provides efficient power conversion and current switching, optimizing device performance and reducing power consumption. Its low on-resistance characteristics make it very suitable for these applications.
- For example, in the power adapter of a laptop computer, the MOSFET can effectively reduce power loss and improve system efficiency, allowing the device to charge faster and extend its use time.
Overall, the **SI7652DP-T1-GE3-VB** is a high-performance N-type MOSFET suitable for a variety of high-efficiency power management, power conversion, communication equipment, and electric vehicles, providing excellent current switching efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours