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SI7621DN-T1-GE3-VB Product details

Product introduction:

Product Introduction - SI7621DN-T1-GE3-VB

**SI7621DN-T1-GE3-VB** is a unipolar P-type MOSFET using Trench technology, packaged in DFN8(3x3) type, with low on-resistance and high current carrying capacity. The maximum drain-source voltage (VDS) of this model is -12V, which is suitable for control circuits of low-voltage loads. The device has high switching performance and performs well under low-voltage driving conditions, and can be used in multiple high-efficiency power management applications. The ID (maximum drain current) of this MOSFET is -25A, which is suitable for loads with high current requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -12V -0.8V -25A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -12V -0.8V -25A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -12V -0.8V -25A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P
Detailed parameter description

- **Package type**: DFN8 (3x3)
- **Configuration**: Single P-type MOSFET
- **Drain-source voltage (VDS)**: -12V
- **Gate-source voltage (VGS)**: 8V (±V)
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 2.5V
- 15mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: -25A
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **Power management system**
SI7621DN-T1-GE3-VB is suitable for high-efficiency power management modules, especially in low-voltage environments. Its low on-resistance (RDS(ON)) characteristics make it very effective in switch mode power supplies (SMPS), which can significantly reduce the energy loss of the system and improve the overall efficiency. It is particularly suitable for use in high-frequency switching applications.

2. **Electric vehicle (EV) battery management system**
In the battery management system of electric vehicles, this MOSFET can be used in the battery voltage monitoring and protection circuit. Due to its low RDS(ON) value, it can reduce heat generation, thereby ensuring efficient operation of the battery and extending the battery life.

3. **Load switch application**
Due to its large current carrying capacity of 25A, SI7621DN-T1-GE3-VB is also suitable for the control of large current loads, such as motor drives, LED lighting, battery chargers and other fields. Its low on-resistance provides excellent performance, reduces switching losses and improves system reliability.

4. **Power Control for Portable Devices**
In portable devices such as smartphones, laptops, tablets, etc., the SI7621DN-T1-GE3-VB can be used for power switch control. Its small package and high efficiency can help achieve smaller power management solutions, extend battery life and improve the overall performance of the device.

5. **DC-DC Converters**
SI7621DN-T1-GE3-VB is ideal for use in DC-DC converters, especially in scenarios where high efficiency and low on-resistance are required. Due to its fast switching and low RDS(ON), it can effectively reduce conduction losses in converters, thereby improving overall efficiency.

These application examples illustrate the wide applicability of the SI7621DN-T1-GE3-VB in multiple electronic systems, especially in scenarios that require efficient current management and miniaturized design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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