Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
|
13mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 30V
- The MOSFET can operate safely at a maximum drain-source voltage of 30V, suitable for low-voltage working environments.
- **VGS (gate-source voltage): ** ±20V
- Supports a gate-source voltage range of ±20V, allowing it to work normally under most common drive voltages and has high input flexibility.
- **Vth (threshold voltage): ** 1.7V
- The turn-on threshold voltage of the MOSFET is 1.7V, which means that it starts to conduct when the gate-source voltage reaches this value, suitable for low-voltage drive.
- **RDS(ON)（On-resistance）:**
- 19mΩ（VGS=4.5V）
- 13mΩ（VGS=10V）
- This MOSFET has extremely low on-resistance, providing excellent conductivity and reducing power loss, especially in high-frequency and high-current applications.
- **ID（Drain Current）:** 30A
- Can withstand a maximum drain current of 30A, suitable for high-current applications.
- **Technology:** Trench
- Using advanced trench technology, it has lower on-resistance and higher efficiency, suitable for high-speed switching applications.
Domain and module applications：
Application fields and module examples
1. **DC-DC converter:**
SI7606DN-T1-GE3-VB MOSFET is very suitable for use in DC-DC converters with its low RDS(ON) characteristics, especially in applications requiring high efficiency and low power loss. It can be used as a switching element in buck or boost converters to provide high-frequency stable switching.
2. **Power management system:**
In power management modules, especially battery management systems for portable devices, this MOSFET can provide efficient switching control, thereby extending battery life and reducing heat generation. Due to its low on-resistance, it helps to improve power conversion efficiency.
3. **Load switch:**
In load switch applications, SI7606DN-T1-GE3-VB MOSFET can effectively switch load currents up to 30A. The low RDS(ON) value enables it to carry higher currents without significant power loss, making it suitable for various automation control systems.
4. **Power Conversion Applications:**
This MOSFET is also suitable for power conversion applications such as inverters, variable frequency drives, etc. It can efficiently switch and control power transmission, while having high thermal stability and long-term reliable working ability.
5. **Battery Charger:**
Due to its low on-resistance, the SI7606DN-T1-GE3-VB MOSFET is very suitable for use as a switching element in battery charger circuits. Its high-efficiency switching characteristics can reduce energy loss and improve overall charging efficiency, especially in situations where the charging current is high.
6. **Power Tools and Home Appliances:**
In power tools and home appliances, this MOSFET can undertake high-current driving tasks and has good thermal management capabilities, ensuring that the equipment can still maintain stable operation under high loads. It is suitable for power control and conversion in various consumer appliances.
Through these applications, the SI7606DN-T1-GE3-VB MOSFET can provide efficient and reliable performance, especially suitable for low voltage and high current applications of modern high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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