Product introduction：
SI7501DN-VB Product Introduction
**SI7501DN-VB** is a **dual-channel** **N+P-Channel MOSFET**, using **Trench technology**, packaged in **DFN8(3x3)-B**, with high current carrying capacity and low on-resistance. This MOSFET supports **±30V** drain-source voltage (V_DS), suitable for a variety of medium and high voltage applications. Its **N-channel** and **P-channel** configurations make it very suitable for symmetrical switching applications such as **H-bridge circuits**, **DC-DC converters** and **power management modules**.
This model has **low on-resistance**: at **V_GS = 10V**, **R_DS(on)** of N-Channel is **13mΩ**, and **R_DS(on)** of P-Channel is **40mΩ**, which can effectively reduce power loss in the system and improve energy efficiency. In addition, the **N-Channel** of SI7501DN-VB can provide **8A** of drain current, while the **P-Channel** of drain current is **-6A**, both of which can provide sufficient current support to ensure stable working performance.
SI7501DN-VB is suitable for application scenarios such as **power management systems**, **load switches**, **DC-DC converters** and **electric drive systems**, especially in electronic products that require efficient switching control. Its low R_DS(on) and high current carrying capacity enable this product to effectively reduce the power loss of the circuit and provide a high-efficiency, low-heat solution.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
8/-6A |
|
|
13/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
8/-6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
8/-6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3)-B |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8(3x3)-B
- **Configuration**: Dual **N+P-Channel MOSFET**
- **V_DS (drain-source voltage)**: ±30V
- **V_GS (gate-source voltage)**: ±20V
- **V_th (gate threshold voltage)**:
- **N-Channel**: 1.6V
- **P-Channel**: -1.7V
- **R_DS(on) (on-resistance)**:
- **N-Channel**:
- 17mΩ @ V_GS = 4.5V
- 13mΩ @ V_GS = 10V
- **P-Channel**:
- 45mΩ @ V_GS = 4.5V
- 40mΩ @ V_GS = 10V
- **I_D (drain current)**:
- **N-Channel**: 8A
- **P-Channel**: -6A
- **Maximum power dissipation**: Maximum **75W** (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum junction temperature**: 150°C
- **Technology**: Trench technology
- **Typical applications**: power management, electric drive systems, H-bridge circuits, DC-DC converters, load switches, etc.
Domain and module applications：
Application Fields and Modules
**SI7501DN-VB**, as a dual-channel MOSFET, is widely used in many fields due to its good electrical characteristics, especially in situations where high efficiency and low power loss are required. The following are examples of the application of this product in different fields:
1. **Power Management System**:
- Due to **SI7501DN-VB**'s **low R_DS(on)** and high current capability, it is very suitable for **DC-DC converters**, **battery chargers** and **AC-DC power modules**. Its low power loss characteristics make the power system more efficient, extend battery life and reduce heat generation.
2. **H-bridge circuit**:
- **SI7501DN-VB**'s **N+P-Channel** configuration is very suitable for **H-bridge circuit**, especially in **electric drive systems**. Whether it is **DC motor control** or **servo drive**, this MOSFET can provide low-loss and high-efficiency switching in forward and reverse switching.
3. **Electric Drive System**:
- In **Electric Vehicles (EV)** and **Industrial Automation Systems**, **SI7501DN-VB** can be used for **Motor Drive** and **Power Conversion**, providing high current support to ensure efficient operation of the system. Due to its low on-resistance, this MOSFET maintains low power loss at high current.
4. **Load Switch**:
- **SI7501DN-VB** is suitable for high current **Load Switch** and can be widely used in **Battery Management System (BMS)**, especially when switching under high current load is required. Its high efficiency and low power consumption design make it an ideal switching element in load switch modules.
5. **High Efficiency Power Converter**:
- In **DC-DC Converter**, **Inverter** and other high efficiency power conversion applications, **SI7501DN-VB** as the main switching element can achieve high efficiency conversion at high frequency, minimize loss and improve energy efficiency.
6. **Power Management and Regulation**:
- This MOSFET can also be used in **power management modules**, such as **power distribution circuits**, **power regulation circuits**, and is particularly suitable for systems that require stable regulation of input power. Low on-resistance and dual-channel configuration give it greater flexibility and efficiency when handling different loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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